212th ECS Meeting - Washington, DC

October 7 - October 12, 2007

PROGRAM INFORMATION
 

E10 - Wide-Bandgap Semiconductor Materials & Devices 8

Electronics and Photonics/Luminescence and Display Materials/Sensor
 

Tuesday, October 9, 2007

Dupont Room, Terrace Level

Optoelectronics 1

Co-Chair(s): E. Stokes and J. Bardwell
TimeAbs#Title and Authors
14:00   1323   Fabrication and Characterization of Ultraviolet Light Emitting Diodes with Nanometer Scale Compositionally Inhomogeneous Active Regions A. V. Sampath, M. Reed, G. Garrett, E. D. Readinger, P. Shen, M. Wraback (US Army Research Laboratory), C. Chua, N. Johnson (Palo Alto Research Center), A. Usikov, O. Kovalenkov, L. Shapovalova and V. Dimtriev (Technologies and Devices International, Inc.)
14:40   1324   Wide-Band-Gap Nanowires: Growth Approaches, Structural Peculiarities and Device Prototyping A. Davydov, N. Sanford, W. Boettinger, K. Bertness, A. Motayed, B. Nikoobakht, I. Levin, M. Vaudin, S. Sundaresan (NIST), R. Mulpuri (G Mason Univ), S. Noor Mohammad (Univ of Maryland), L. Robins and J. E. Maslar (NIST)
15:20   1325   Time-Resolved Photoluminescence of Wideband Gap Semiconductor Devices G. Garrett, M. Reed, A. V. Sampath, P. Shen and M. Wraback (US Army Research Laboratory)
16:00   1326   Composition Tunable Quantum Dots as Light Emitters L. Qu (Crystalplex Corporation)
16:40   1327   Device Challenges for Making a p-Side Down HVPE-Grown n-InGaN/p-GaN Single Heterostructure LED M. Reed (US Army Research Laboratory), E. Readinger, P. Shen (Army Research Laboratory), M. Wraback (US Army Research Laboratory), A. Syrkin, A. Usikov and V. Dmitriev (Technologies and Devices International, Inc.)
17:00   1328   Bandgap Engineered MgZnO Nanocrystals for Photoluminescence Applications L. Bergman, J. Huso and J. Morrison (University of Idaho)
17:20   1329   Localization of Oxygen Donor States in Gallium Nitride K. C. Mishra (OSRAM SYLVANIA), P. Schmidt (Technical University of Darmstadt), S. Laubach (Eduard-Zintl-Institut,Technische Universität Darmstadt) and K. Johnson (Massachusetts Institute of Technology)
17:40   1330   Ultraviolet to Red Emission Nano-LEDs Based on One-Dimensional III-V Nitride Nanocolumns Grown on (111) Conductive Si Substrates K. Kishino, A. Kikuchi, H. Sekiguchi and S. Ishizawa (Sophia University)
 

Exhibit Hall, Concourse Level

Poster session

Co-Chair(s): E. Stokes
TimeAbs#Title and Authors
o   1331   Properties of Al-Doped ZnO Thin Films by E-Beam Evaporation D. Kim, E. Jeong, I. Kim and S. Choi (Yonsei University)
o   1332   Electrical and Optical Characterization of CdSe Quantum Dot Active Layer Embedded in GaN Light Emitting Diode C. C. Burkhart, M. Hodge, K. Patel (University of North Carolina at Charlotte), J. Pagan (Dot Metrics Technologies) and E. Stokes (University of North Carolina at Charlotte)
o   1333   Simultaneously Enhancing Internal and Extraction Efficiencies of GaN-based Light Emitting Diodes Via Chemical-Wet-Etching Patterned-Sapphire-Substrate (CWE-PSS) Y. Lee, C. Chiu (Department of Photonics, National Chiao Tung University), H. Kuo (Department of Photonics National Chiao Tung University), T. Lu, S. Wang (Department of Photonics, National Chiao Tung University), K. Nar, K. Lau (Photonics Technology Center, Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology), Z. Yang (Future Chips Constellation & Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute), S. P. Chang (Future Chips Constellation & Department of Physics Applied Physics and Astronomy Rensselaer Polytechnic Institute) and S. Lin (Future Chips Constellation & Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute)
o   1334   Electrical Properties and Thermal Stabilities of B, Al, Ga and In-Doped ZnO Thin Films J. An, J. Noh, C. Cho, I. Cho (Seoul National University), H. Jung (Kookmin University) and K. Hong (Seoul National University)
 

Wednesday, October 10, 2007

Dupont Room, Terrace Level

Optoelectronics 2

Co-Chair(s): G. Hunter and P. Shen
TimeAbs#Title and Authors
08:00   1335   Stability Effects of Reflective Mirror on GaN LED/Mirror/Si Via Wafer Bonding and laser Lift-Off Techniques S. Huang (Engineering), R. Horng (National Chung Hsing University) and D. Wuu (Materials Science and Engineering)
08:20   1336   Enhancement of the Light Emissions from Ag Doped ZnO Thin Films by Post-Annealing Process in Air E. Jeong, D. Kim, I. Kim and S. Choi (Yonsei University)
08:40   1337   Circular Transmission Line Model (CTLM) Analysis for Non-Linear VI Characteristics on MBE p-GaN K. N. Patel, E. Stokes (University of North Carolina at Charlotte), J. Pagan (Dot Metrics Technologies), C. C. Burkhart, M. Hodge and P. Batoni (University of North Carolina at Charlotte)
09:00   1338   Reflectance-Anisotropy Study of ZnTe Around the E1 and E1+Δ1 Critical Points J. R. Molina-Contreras, F. Villalobos-Piña and R. Tejo-Vázquez (Instituto Tecnológico de Aguascalientes)
09:20   1339   Study of the Thin-Film GaN-Based LEDs with TiO2/SiO2 Omnidirectional Reflectors and PEC Roughened Surfaces C. Chiu (Department of Photonics, National Chiao Tung University), H. Kuo (Department of Photonics National Chiao Tung University), C. Lee (Department of Photonics, National Chiao Tung University), C. Lin (Department of Computer and Information Science, Polytechnic University), H. Huang, T. Lu, S. Wang (Department of Photonics, National Chiao Tung University) and K. Leung (Department of Computer and Information Science, Polytechnic University)
 

Electronic devices and Sensors

Co-Chair(s): J. Brown and K. Mishra
TimeAbs#Title and Authors
10:00   1340   MBE-Grown Ultrashallow AlN/GaN HEMT Technology H. G. Xing, Y. Cao, T. Zimmermann, D. Deen and D. Jena (University of Notre Dame)
10:40   1341   Propagation and Shrinking of Shockley Stacking Faults in SiC PiN Diodes J. D. Caldwell, R. Stahlbush, O. Glembocki, K. Hobart and K. Liu (Naval Research Laboratory)
11:20   1342   An Overview of Wide Bandgap SiC Sensor and Electronics Development at NASA Glenn Research Center G. Hunter, P. G. Neudeck, J. Xu, G. Beheim, R. Okojie and L. Chen (NASA Glenn Research Center)
11:40   1343   GaN and ZnO-Based Sensors for Gas, Nuclear Materials and Chemical Detection S. Pearton, F. Ren, B. Kang, H. Wang (University of Florida, Chemical Engineering), B. Gila (Univ.Florida), D. Norton, L. Tien (University of Florida), T. Chancellor, T. Lele, Y. Tseng (University of Florida, Chemical Engineering) and J. Lin (University of Florida)
12:00   1344   Real-Time Neutron Dtection by Gd-Doped HfO2 Diodes M. L. Natta, A. Sokolov (University of Nebraska-Lincoln), J. Tang, Z. Wang (University of New Orleans) and J. Brand (University of Nebraska-Lincoln)
12:20 Intermission (40 Minutes)
13:00 Intermission (60 Minutes)
14:00   1345   In Situ Transmission Electron Microscopy of GaN pn Diode Degradation M. E. Twigg, Y. Picard, N. Bassim, M. Mastro, C. Eddy Jr., R. Henry and R. Holm (Naval Research Laboratory)
14:40   1346   AlGaN/GaN HEMTs Fabricated on Selectively Grown Mesas on Si(111) J. Bardwell, S. Haffouz, H. Tang, A. Kochtane, T. Lester, R. Wang and S. Rolfe (National Research Council)
15:00   1347   Effects of Source and Drain Electrode Materials on Oxide Thin Film Transistor C. Kim, J. Park, S. Kim, I. Song, Y. Park, E. Lee and J. Lee (Samsung Advanced Institute of Technology)
 

Materials and Characterization

Co-Chair(s): E. Stokes and J. Bardwell
TimeAbs#Title and Authors
15:40   1348   Non-Destructive Analysis of Defects in Wide-Band-Gap Thin Films by Electron Channeling Contrast Imaging Y. Picard, M. Twigg, J. D. Caldwell, C. Eddy, K. Liu, R. Stahlbush, M. Mastro, R. Henry, R. Holm and P. Neudeck (Naval Research Laboratory)
16:20   1349   Dislocation Nucleation in MOCVD GaN Films on Stepped and Unstepped 4H-SiC Substrates M. E. Twigg, N. Bassim, Y. Picard, M. Mastro, T. Zega, J. D. Caldwell, R. Henry, C. Eddy Jr., R. Holm, P. Neudeck (Naval Research Laboratory), A. Trunek (OAI) and A. Powell (Sest, Inc.)
17:00   1350   Characterization of Bulk GaN Crystals Grown From the Solution at Moderate Pressure and Temperature M. Murthy (George Mason University, Dept. of ECE), B. Feigelson (SAIC), R. Frazier, J. A. Freitas and M. Mastro (Naval Research Laboratory)
17:20   1351   Structural Characterization of the Rotation Domain of Aluminum Nitride During Sapphire Nitridation H. Lee, J. Ha, T. Minegishi, H. Lee, S. Lee, H. Goto, S. Lee, M. Cho, T. Yao and S. Hong (Tohoku University)