212th ECS Meeting - Washington, DC

October 7 - October 12, 2007

PROGRAM INFORMATION
 

E2 - Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 10

Electronics and Photonics
 

Monday, October 8, 2007

Lincoln Room West, Concourse Level

20 Years of Wafer Cleaning

Co-Chair(s): J. Ruzyllo and R. Novak
TimeAbs#Title and Authors
10:30   1008   Evolution of Silicon Cleaning Technology Over the Last Twenty Years J. Ruzyllo (The Pennsylvania State University), R. E. Novak (Akrion Inc.), T. Hattori (Sony Corp.), P. Mertens (IMEC) and P. Besson (CEA-LETI)
 

Cleaning Challenges for Nano-Scale Devices

TimeAbs#Title and Authors
11:00   1009   Issues and Challenges of Cleaning for Nano-Scale NAND Flash Memory Manufacturing C. Ryu, Y. Song and G. Jin (Hynix Semiconductor Inc.)
11:30   1010   Corrosion Suppression During Wet Processes in FEOL and BEOL for 45nm Node and Beyond H. Aoki, D. Watanabe, S. Hotta, C. Kimura and T. Sugino (Osaka University)
 

Dry Cleaning

Co-Chair(s): T. Hattori and H. Schmidt
TimeAbs#Title and Authors
14:00   1011   Development of a Manufacturable Single-Wafer HF Vapor Process for Pre-Epitaxial Cleans E. Bergman, O. Pollet, M. Duray and M. Brown (Semitool Inc.)
14:30   1012   Yield Improvement Using Cryogenic Aerosol for BEOL Defect Removal J. Lauerhaas (FSI International), L. Tan, A. Hamzah (Chartered Semiconductor Manufacturing, Ltd.), Y. Kok and J. Kwang (FSI International)
14:50   1013   Characteristics of High Power Laser Shock Waves and Their Cleaning Performance T. Kim, Y. Yoo, I. Son (Hanyang University), D. Jang, D. Kim (POSTECH), J. Lee (IMT Co.), A. Busnaina (Northeastern University) and J. Park (Hanyang University)
15:10   1014   Thermal Cleaning of Silicon Nitride with Fluorine and Additive Mixture J. Sonobe and T. Shigemoto (Air Liquide Laboratories)
15:30   1015   Particle Removal from Micron-Sized Trenches Using High-Velocity-Aerosol Cleaning and Comparison with Megasonic Tank Cleaning K. L. Wostyn (IMEC vzw), T. Janssens, T. Bearda, L. Leunissen, P. Mertens (IMEC), K. Sano (DNS Mfg Co Ltd) and A. Eitoku (DNS)
15:50 Intermission (20 Minutes)
 

Wet Etching

Co-Chair(s): J. Butterbaugh and K. Reinhardt
TimeAbs#Title and Authors
16:10   1016   Maintaining a Stable Etching Selectivity in Silicon Nitride Etching with Hot Phosphoric Acid L. Liu, I. Kashkoush, G. Chen and C. Murphy (Akrion Inc.)
16:30   1017   Etching of Thermal SiO2 in Supercritical CO2 S. Malhouitre (BOC), J. Van Hoeymissen (IMEC), C. Case (Solid State Solutions) and P. Granger (BOC Edwards)
16:50   1018   Removal of Organic Wax on Silicon by Ozonated DI Water J. Yi, S. Lee, T. Kim (Hanyang University), G. Lee and S. Bae (Siltron Inc.)
 

Tuesday, October 9, 2007

Lincoln Room West, Concourse Level

Megasonic Cleaning

Co-Chair(s): P. Mertens and P. Besson
TimeAbs#Title and Authors
08:00   1019   Damage Clustering and Damage-Size Distributions After Megasonic Cleaning C. De Marco (STMicroelectronics), K. L. Wostyn (IMEC vzw), T. Bearda (IMEC), K. Sano (DNS Mfg Co Ltd), K. Kenis, T. Janssens, L. Leunissen (IMEC), A. Eitoku (DNS) and P. Mertens (IMEC)
08:20   1020   Removal of Backside Particles by a Single Wafer Megasonic System H. Sohn (Hanyang University), U. Hong (Akrion), C. Park (Akrion INC), J. Park (Hanyang University), E. Lee, H. Lee (Akrion INC) and E. Brause (Akrion)
08:40   1021   Particle Removal from Si Substrates in Organic Solvents using Megasonic Energy F. Barbagini, J. Van Hoeymissen and T. Bearda (IMEC)
09:00   1022   Using Megasonics to Extend Chemicals Cleans for 45nm Device Technology C. Franklin, Y. Fan, E. Brause and V. Nguyen (Akrion)
09:20   1023   High Efficiency Wafer Backside Cleaning with Full Coverage Megasonics Spin Process B. Xie (Applied Materials Inc.), S. Park and J. Han (Applied Materials Korea)
09:40   1024   Quantitative Measurement of Pattern Collapse Force and Particle Removal Force T. Kim (Hanyang University), K. L. Wostyn (IMEC vzw), P. Mertens (IMEC), A. Busnaina (Northeastern University) and J. Park (Hanyang University)
10:00 Intermission (20 Minutes)
 

Metal Contamination

TimeAbs#Title and Authors
10:20   1025   The Metallic Contamination Related Whisker Defect During Deposition and Its Removal G. Choi (Hynix semiconductor)
10:50   1026   Dissemination of Metallic Contamination During IC Manufacturing A. Danel (CEA-LETI), Y. Borde (STMicroelectronics) and A. Royer (CEA-LETI)
11:10   1027   Impact of Metallic Contamination on Si: Shortloop Issues Y. Borde (STMicroelectronics), A. Danel (CEA-LETI), A. Roche (STMicroelectronics) and M. Veillerot (CEA-LETI)
11:30   1028   Automating Metal Lift-Off for Mass MEMS Production J. J. Naughton (AMI Semiconductor) and P. Franklin (FLIR Systems)
11:50   1029   A New Approach for FEOL Critical Wafer Surface Cleaning T. Fischer (Infineon, Germany), S. Puri (Nano Green Technology Inc), R. Hoyer (Qimonda, Germany), K. L. Wostyn (IMEC vzw) and T. Janssent (IMEC, Belgium)
 

Photoresist Removal

Co-Chair(s): J-G. Park and K. Saga
TimeAbs#Title and Authors
13:30   1030   All-Wet Strip Approaches for Post-Etch Photoresist Layers After Low-K Patterning M. Claes, Q. Le, E. Kesters, M. Lux (IMEC), A. Urionabarrenetxea (University of Basque Country), G. Vereecke and P. Mertens (IMEC)
14:00   1031   Plasma-Less Photoresist Stripping H. Takahashi (Dainippon Screen Mfg., Co. Ltd.)
14:20   1032   Wet Resist Strip Capability vs. Implant Energy K. K. Christenson (FSI International)
14:40   1033   Single Wafer Tool Cleaning for Bi-layer Photoresist Rework - Stripper Development and Evaluation A. Wu, E. Baryschpolec, L. Molnar (Air Products & Chemicals, Inc.), S. Henry, S. Detterbeck, L. Brilz (SEZ AG), C. Bartsch, G. Sulzer (AMD Saxony LLC & Co. KG (Fab 30)) and A. Ott (AMD Fab 36 LLC & Co. KG (Fab 36))
15:00   1034   Effect of Ashing, Strip and Annealing Process on the Dopant Concentration of Silicon M. Lee, I. Park, D. Kang, D. Han, Y. Son, K. Lee, C. Hong, C. Kang and J. Moon (Samsung Electronics Co., Ltd.)
15:20   1035   Post Ion-Implant Photoresist Removal for Front-End-Of-Line Applications G. G. Totir (IBM), M. Frank (IBM T. J. Watson Research Center), R. Vos, S. Arnauts, T. Bearda, K. Kenis, M. Delande, Q. Le, E. Kesters, G. Vereecke, G. Mannaert, M. Lux, I. Hoflijk, T. Conard (IMEC), S. Banerjee (BOC Eco-Snow Systems), S. Malhouitre (BOC), L. Leunissen and P. Mertens (IMEC)
15:40 Intermission (20 Minutes)
16:00   1036   A Review of Microelectronic Manufacturing Applications Using DMSO-Based Chemistries G. Kvakovszky, A. McKim (Gaylord Chemical Corporation) and J. C. Moore (DAETEC, LLC)
16:20   1037   Novel Wet Photoresist Strip for Wafer Level Packaging S. Verhaverbeke and J. Zhao (Applied Materials)
16:40   1038   Study of SiO2 Modifications Induced by Oxygen Plasmas and Their Effect on Wet Processes A. Votta, E. Bellandi, M. Alessandri (STMicroelectronics), A. Vedda, M. Fasoli and F. Moretti (Universita' di Milano-Bicocca)
 

Wednesday, October 10, 2007

Lincoln Room West, Concourse Level

Single Wafer Cleaning

Co-Chair(s): J. Barnett and A. Hoff
TimeAbs#Title and Authors
08:00   1039   Advanced Surface Preparation Development on a 300 mm Single Wafer Spin-on Platform G. Briend (STMicroelectronics), P. Besson (CEA-LETI), T. Salvetat (CEA LETI) and O. Pollet (Semitool Inc.)
08:20   1040   High Performance HF-last Process in a Novel FEOL Single Wafer Clean System Z. Li, B. Xie and W. Lu (Applied Materials Inc.)
08:40   1041   Elimination of Electrostatic Charge-Induced "Punch-Through" Defects Using Single-Wafer Cleaning Processes P. Matz, T. Hurd (Texas Instruments), L. Archer and K. Cunningham (SEZ)
09:00   1042   An Innovative Jet Spray for Better Particle Removal Efficiency in Single Wafer Damage-free Cleans for 65nm Node and Beyond W. Lu, B. Xie and Z. Li (Applied Materials Inc.)
09:20   1043   Gate Oxide Cleans on Single Wafer Tool P. Garnier (ST Microelectronics), T. Vessa and A. Larrea (Freescale semiconductors)
09:40 Intermission (20 Minutes)
10:00   1044   Vertical Aqueous Pulsed Spray Technology for Particle Removal R. Randhawa, H. Christov, S. Mangano, K. Reinhardt, S. Erez and S. Basha (Planar Semiconductor)
 

Contact Hole/Trench Cleaning

Co-Chair(s): J. Barnett and J. Ruzyllo
TimeAbs#Title and Authors
10:20   1045   Challenges in Sub-Micron Contact Hole Cleaning F. Goh, Z. Ismail and M. Yeo (Chartered Semiconductor Manufacturing Ltd)
10:40   1046   The Impact of Drying Methods on Defect Generation in Deep Trench Processing C. Goessens, N. Martens, J. Baele, E. De Backer, F. De Pestel and M. Engle (AMIS)
11:00   1047   The Effect of Delay Between Dry Etch and Wet Clean Processing Steps on Cleaning of Post-Etch Residues D. Hellin (Lam Research Corporation), I. J. Vos, W. Boullart (IMEC) and J. Vertommen (Lam Reserach Corporation)
11:20   1048   Via Failures in a Plug Process Due to Incomplete Via Clean Chemistry Removal D. M. Florence, S. Burtosky, C. Cioffi, J. Doub, R. Lappan, K. Mortensen and C. Russell (AMI Semiconductor)
11:40   1049   Liquid Infiltration Mechanism for Cleaning in Deep Microholes K. Ota (Hitachi Production Engineering Research Laboratory) and A. Tsutsumi (The University of Tokyo)
 

Front End of the Line Cleaning

Co-Chair(s): K. Christenson and G. Choi
TimeAbs#Title and Authors
13:30   1050   Wet Etching Step Evolutions for Selective Removal on Silicide or Germanide Applications V. Carron and P. Besson (CEA-LETI)
14:00   1051   Challenges in Nickel Platinum Silicide Wet Etching for Sub-65nm Device Technology F. Goh, V. Sih, W. Tan and Z. Ismail (Chartered Semiconductor Manufacturing Ltd)
14:20   1052   Post Salicidation Clean: Selective Removal of Un-Reacted NiPt Towards NiPtSi(Ge) K. Xu (SEZ AG), A. Lauwers, R. Vos (IMEC), L. Archer (SEZ), C. Demeurisse, S. Mertens (IMEC), H. Kraus, S. Henry (SEZ AG), P. Mertens (IMEC), F. Kovacs, M. Dalmer and E. Gaulhofer (SEZ AG)
14:40   1053   Zero Defectivity Dual Gate Processing J. M. Towner and J. J. Naughton (AMI Semiconductor)
15:00 Intermission (20 Minutes)
15:20   1054   Interactions of Sapphire Surfaces With Standard Cleaning Solutions K. W. Kirby, K. Shanmugasundaram and J. Ruzyllo (The Pennsylvania State University)
 

Particle Removal/Interactions

TimeAbs#Title and Authors
16:00   1056   Local Removal Frequency of Nano Particles in Megasonic Cleaning T. Janssens (IMEC), K. L. Wostyn (IMEC vzw), S. Arnauts, A. De Geyter, T. Bearda and P. Mertens (IMEC)
16:20   1057   Effect of Particle Deposition and Wet/Dry Cleaning Methods on Particle Removal Efficiency T. Kim (Hanyang University), A. Busnaina (Northeastern University) and J. Park (Hanyang University)
16:40   1058   Nano Particle Control on 300mm-wafers in Supercritical Fluid Technology J. Inahara, R. Okamoto (ESPEC Corp.), S. Kang, M. Nakahira, S. Hasegawa (Tsukuba Semi Technology Inc.) and T. Takahagi (Hiroshima University)
17:00   1059   Parametric Nano Particle Cleaning S. Ligai (Lancetta, Inc.), S. Pravdin (Institute of Theoretical and Applied Mechanics, Russia) and M. Ligai (Cornell University, Ithaca, NY)
 

Thursday, October 11, 2007

Lincoln Room West, Concourse Level

Back End of the Line Cleaning

Co-Chair(s): A. Danel and I. Kashkoush
TimeAbs#Title and Authors
08:00   1060   Elimination of Post Cu-CMP Watermark by Optimizing Post CMP Clean to Control Cu Dissolution S. Petitdidier (STMicroelectronics), M. Mellier, A. Couvrat (NXP Semiconductors), C. Trouiller (STMicroelectronics), M. Luche (Freescale Semiconductor), C. Euvrard (CEA - Leti - Minatec), M. Juhel (STMicroelectronics) and M. Hopstacken (NXP Semiconductors)
08:30   1061   Electrochemical Behavior of Copper in Post-Etch Cleaning Solutions S. Bilouk (STMicroelectronics), C. Pernel (CEA/ LETI) and R. P. Nogueira (SIMAP/ LEPMI)
08:50   1062   A Novel Concept for Contact Etch Residue Removal I. J. Vos (Imec), D. Hellin (Lam Research Corporation), S. Demuynck, T. Conard (IMEC), J. Vertommen (Lam Reserach Corporation) and W. Boullart (IMEC)
09:10   1063   Modifications of Porous Low-k by Plasma Treatments and Wet Cleans K. Xu (SEZ AG), G. Vereecke, E. Kesters, Q. Le, M. Lux (IMEC), H. Kraus, S. Henry (SEZ AG), L. Archer (SEZ), E. Gaulhofer, F. Kovacs, M. Dalmer (SEZ AG), P. Mertens (IMEC), S. Luo and Q. Han (Axcelis)
09:30 Intermission (20 Minutes)
 

Post-CMP Cleaning

TimeAbs#Title and Authors
09:50   1064   Surface Preparation in CMP Process; Post CMP Cleaning and Defects J. Park (Hanyang University)
10:20   1065   Post Cu-CMP Engineering Challenges for the 65 nm Technology Nodes and Beyond. S. Petitdidier (STMicroelectronics), M. Mellier (NXP Semiconductors), M. Zaleski (Freescale Semiconductor), A. Couvrat (NXP Semiconductors), M. Luche, M. Calvo-Munoz (Freescale Semiconductor), D. Guiheux and M. Juhel (STMicroelectronics)
10:50   1066   Post W CMP Cleaning Without HF Cleans Y. Kang, C. Yang, T. Kwon, J. Park (Hanyang University), J. Jo and G. Lim (Samsung Electronics Co., Ltd.)
11:10   1067   Incorporation of Cu Passivators in Post-CMP Cleaners D. W. Peters (Paragon Consultants)
11:30   1068   Effect of Poly Silicon Wettability on Polymeric Residue Contamination Y. Kang, J. Park (Hanyang University), Y. Hong, S. Han, S. Yun, B. Yoon (Samsung Electronics) and C. Hong (Samsung Electronics Co., Ltd.)
 

Photomask Cleaning

Co-Chair(s): R. Novak
TimeAbs#Title and Authors
14:00   1069   Particle Adhesion to Photomask Substrates R. Jaiswal, C. Kilroy, G. Kumar (Purdue University), S. Banerjee (BOC Eco-Snow Systems) and S. Beaudoin (Purdue University)
14:20   1070   Removal of Gold Particles From Chromium Oxynitride Surface With Dilute Sulfuric Acid Solutions V. S. Pandit (Novellus Systems Inc), M. Keswani (University of Arizona), S. Raghavan (The University of Arizona), P. Deymier (University of Arizona), F. Eshbach, A. Sengupta and H. Yun (Intel Corporation)
14:40 Concluding Remarks (20 Minutes)