212th ECS Meeting - Washington, DC

October 7 - October 12, 2007

PROGRAM INFORMATION
 

E3 - Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes

Electronics and Photonics/Dielectric Science and Technology
 

Tuesday, October 9, 2007

Map Room, Terrace Level

Characterization - 1

Co-Chair(s): D. Schroder
TimeAbs#Title and Authors
08:00   1071   Process Optimization by Means of Integrated Monitoring Tools in the Semiconductor Industry L. H. Pfitzner and M. Schellenberger (Fraunhofer-IISB)
08:40   1072   Photoluminescence-Based Metrology for Si and SiGe Materials A. Buczkowski (Nanometrics Inc.)
09:20   1073   Characterization of Biaxial Strained-Silicon by Spectroscopic Ellipsometry Y. Gong (Nanyang Technological University), C. Ng (Chartered Semiconductors Ltd.) and T. Wong (Nanyang Technological University)
09:40 Intermission (20 Minutes)
10:00   1074   Junction Photovoltage (JPV) Techniques for Ultra-Shallow Junction Characterization V. N. Faifer, M. I. Current (Frontier Semiconductor) and D. Schroder (ASU)
10:40   1075   Material Characterization Issues of Nitrogen in Silicon H. C. Alt (FHM-Munich University of Applied Sciences)
11:20   1076   Solutions to Ultra Shallow Boron Distribution Analysis Challenges T. Buyuklimanli (Evans Analytical Group)
 

Characterization - 2

Co-Chair(s): L. Fabry
TimeAbs#Title and Authors
14:00   1077   3D Site-Specific Analysis of Devices by LEAP Atom Probe Tomography K. Thompson, R. Alvis, R. Ulfig and D. Larson (Imago Scientific Instruments)
14:40   1078   Doping Density Depth Profiling Analysis with Elastic Recoil Detection A. Bergmaier and G. Dollinger (Universitaet der Bundeswehr Muenchen)
15:20   1079   Verification of a Method to Detect Grown-in Oxide Precipitate Nuclei in Czochralski Silicon G. Kissinger (IHP), A. Sattler (Siltronic AG), J. Dabrowski (IHP) and W. Von Ammon (Siltronic AG)
15:40   1080   Characterization of Pinhole in Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy X. Wu, J. Uchikoshi, T. Hirokane, R. Yamada, K. Arima and M. Morita (Osaka University)
16:00   1081   Delineation of Crystalline Defects in Semiconductor Substrates and Thin Films by Chemical Etching Techniques B. Kolbesen (University of Frankfurt)
16:40   1082   Defect Delineation by the Electrochemical Cu Deposition in the p-type Si Wafer K. Kim, H. Ham, D. Hwang, B. Lee (Wafer Charaterization Research Team, R&D, Siltron Inc.,Korea) and S. Park (Dept.of Chemistry, POSTECH)
17:00   1083   Evaluation of Surface Defects in Silicon on Insulator Wafer Using HF and Cu Decoration Method L. Eun Joo (Siltron), K. Lee (Wafer characteristic research Team, R&D Center, Siltron Inc), D. Hwang and B. Lee (Wafer Charaterization Research Team, R&D, Siltron Inc.,Korea)
 

Exhibit Hall, Concourse Level

Posters

TimeAbs#Title and Authors
o   1084   Development of a New Class of Chromium Free Etch Solutions for the Delineation of Defects in Different Semiconducting Materials D. Possner (Johann-Wolfgang-Goethe University) and B. Kolbesen (University of Frankfurt)
o   1085   Drain Leakage Current Behavior in Circular Gate SOI nMOSFETs Operating from Room Temperature up to 573K M. Bellodi and L. Almeida (Centro Universitário da FEI)
o   1086   Comparison Between Harmonic Distortion in Circular Gate and Conventional SOI nMOSFET Using 0.13 µm Partially-Depleted SOI CMOS Technology L. P. Dantas, S. P. Gimenez (Centro Universitário da FEI) and J. Martino (LSI - Universidade de São Paulo)
o   1087   EOT Measurement of Ultra-Thin Gate Dielectrics Using the Tunneling Current Regime S. G. Dos Santos and W. Nogueira (University of São Paulo - Escola Politécnica)
o   1088   Influence of the Synthetic Procedures on the Optoelectronic Properties of CdSe Nanodots U. Farva, Y. Na, Y. Kim, D. Kim, T. Nguyen and C. Park (Yeungnam University)
o   1089   Thermal Stabilities and Electrical Characteristics of Various Metal-Germanide Films K. Park (An Institute of Technology), C. An, M. Lee (Sungkyunkwan University), E. Jung, D. Ko (An Institute of Technology) and H. Kim (Sungkyunkwan University)
 

Wednesday, October 10, 2007

Map Room, Terrace Level

Characterization - 3

Co-Chair(s): B. Kolbesen
TimeAbs#Title and Authors
08:00   1090   Aberration Corrected Scanning Transmission Electron Microscopy for Silicon Technology K. Van Benthem (Oak Ridge National Laboratory), A. Marinipoulos, S. Pantelides (Vanderbilt University) and S. Pennycook (Oak Ridge national Laboratory)
08:40   1091   Evaluation of Hybrid-Orientation Si(110)/Si(100) Direct Bonded Interfaces M. C. Wagener (North Carolina State University), M. Seacrist (MEMC) and G. Rozgonyi (North Carolina State University)
09:20   1092   Grown-in Defects in SiGe/Si Heterostructures J. Lu, Y. Park (NC State University) and G. Rozgonyi (North Carolina State University)
09:40 Intermission (20 Minutes)
10:00   1093   Application of Scanning Probe Microscopy Techniques for Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices U. Schwalke (Darmstadt University of Technology)
10:40   1094   Scanning Capacitance Microscopy and Scanning Kelvin Force Microscopy for the Characterization of Semiconductors and Device Structures J. J. Kopanski, T. Walker and W. Jiang (National Institute of Standards and Technology)
11:20   1095   A Fast AFM Probe with Integrated Interferometric Sensing and Electrostatic Actuation L. Degertekin, G. Onaran, M. Balantekin, B. Van Gorp and Z. Parlak (georgia institute of technology)
 

Characterization - 4

Co-Chair(s): A. Buczkowski
TimeAbs#Title and Authors
14:00   1096   Novel Ultrasonic Tool for Vacancy Observation in Crystalline Silicon T. Goto, H. Yamada-Kaneta, K. Sato, M. Hikin, Y. Nemoto (Niigata University) and S. Nakamura (Tohoku University)
14:40   1097   Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions M. Bargallo Gonzalez, N. Thomas, E. Simoen, P. Verheyen, A. Hikavyy, F. Leys (IMEC), Y. Okuno (Matsushita assignee to IMEC), B. Vissouvanadin Soubaretty, R. Loo, C. Claeys (IMEC), V. Machkaoutsan (ASM Belgium), P. Tomasini, S. Thomas (ASM America), J. Ping Lu, J. Weijtmans and R. Wise (Texas Instruments)
15:00   1098   Characteristic of Junction Leakage-Current with Bulk Micro-Defect (BMD) Density in P/N+ Junction W. Lee, J. Kim, K. Kim, K. Lee (SILTRON INC), D. Hwang (Wafer Charaterization Research Team, R&D, Siltron Inc.,Korea) and B. Lee (SILTRON INC)
15:20 Intermission (20 Minutes)
15:40   1099   In Situ Gas Phase Infrared Absorption Measurements During Hafnium Oxide Atomic Layer Deposition J. E. Maslar, W. Hurst, D. Burgess, W. Kimes, N. Nguyen and E. Moore (NIST)
16:00   1100   Process and Electrical Characteristics of MO-ALD HfO2 Films for High-K Gate Applications Grown in a Production Worthy 300 mm Deposition System R. D. Clark, C. Wajda, G. Leusink (TEL Technology Center, America, LLC), L. Edge, J. Faltermeier, P. Jamison (IBM @ Albany NanoTech), B. Linder, M. Copel (IBM Research Division), V. Narayanan (IBM Semiconductor Research and Development Center (SRDC)), M. A. Gribelyuk (IBM Systems and Technology Group), R. Loesing and R. Murphy (IBM Semiconductor Research and Development Center)
16:20   1101   Permittivity Enhancement of Mechanically Strained SrTiO3 MIM Capacitor S. Kuroki (Tohoku University), M. Toda (Yamagata University), M. Umeda (Wacom R&D CO., LTD.), K. Kotani and T. Ito (Tohoku University)
16:40   1102   In-Situ Measurement Method and Rate Theory for Clarifying Multi-Component Organic Compounds Adsorption and Desorption on Silicon Surface H. Habuka and D. Yamaya (Yokohama National University)
 

Thursday, October 11, 2007

Map Room, Terrace Level

Characterization - 5

Co-Chair(s): R. Hockett
TimeAbs#Title and Authors
08:20   1103   Ab Initio Analysis of Point Defects in Plane-Stressed Si or Ge Crystal K. Sueoka (Okayama Prefectural University), P. Spiewak (Warsaw University of Technology) and J. Vanhellemont (Ghent University)
09:00   1104   Electron Holography as Characterization Tool for 2-D Analysis of p-n Junctions M. A. Gribelyuk (IBM Systems and Technology Group), A. Domenicucci, P. Ronsheim, J. McMurray and O. Gluschenkov (IBM)
09:40 Intermission (20 Minutes)
10:00   1105   X-Ray Metrology for the Semiconductor Industry K. Bowen (Bede plc) and P. Ryan (Bede X-ray Metrology)
10:40   1106   Advanced Metrology for Wafer Contamination and Nanolayer Characterization Using XRF Methods B. Beckhoff, R. Fliegauf, P. Hoenicke, M. Kolbe, M. Mueller, B. Pollakowski, J. Weser and G. Ulm (Physikalisch-Technische Bundesanstalt)
11:20   1107   Hf-related Gate Oxide Thickness Mapping Using XRR/XRF R. Ortega, S. Baumann, R. Hockett (Evans Analytical Group), H. Murakami (Technos Co. Ltd.) and V. Ramakrishnan (Technos International, Inc.)
 

Characterization - 6

Co-Chair(s): C. Claeys
TimeAbs#Title and Authors
14:00   1108   Novel X-Ray Tools for Characterization of "Solar Silicon" T. Buonassisi (Massachusetts Institute of Technology)
14:40   1109   Detection and Quantification of Boron-Interstitial-Clusters (BIC) in Low Energy Boron Implanted Silicon by X-Ray Photoelectron Spectroscopy J. Shallenberger (Evans Analytical Group) and S. Walther (Varian Semiconductor Equipment Associates)
15:20 Intermission (20 Minutes)
15:40   1110   Contactless Diagnostic Tools and Metallic Contamination in the Semiconductor Industry H. Savin, M. Yli-Koski, A. Haarahiltunen, H. Talvitie and J. Sinkkonen (Helsinki University of Technology)
16:20   1111   Carrier Lifetime Measurements in Silicon for Photovoltaic Applications T. Pavelka, A. Pap and G. Szilagyi (Semilab, Inc.)
17:00   1112   Manifestation of Cu Impurities on Silicon Surfaces, Implication for Monitoring Cu Contamination M. Wilson, A. Savtchouk, J. D'Amico, I. Tasarov, L. Jastrzebski and J. Lagowski (Semiconductor Diagnostics, Inc.)