212th ECS Meeting - Washington, DC

October 7 - October 12, 2007

PROGRAM INFORMATION
 

E4 - High Dielectric Constant Materials and Gate Stack 5

Dielectric Science and Technology/Electronics and Photonics
 

Monday, October 8, 2007

Thoroughbred Room, Concourse Level

Hf-Based High-K Materials

Co-Chair(s): D. Landheer and S. van Elshocht
TimeAbs#Title and Authors
10:30 Introductory Remarks (10 Minutes)
10:40   1113   Tight Distribution of Dielectric Characteristics of HfSiON R. Hasunuma, T. Naito, C. Tamura, A. Uedono, K. Shiraishi (University of Tsukuba), N. Umezawa (National Institute for Materials Science), T. Chikyow (National Institute for Material Science), S. Inumiya (Toshiba), M. Sato (Selete), Y. Tamura (Semiconductor Leading Edge Technologies), H. Watanabe (Osaka University), Y. Nara, Y. Ohji (Selete), S. Miyazaki (Hiroshima University), K. Yamada (Waseda University) and K. Yamabe (University of Tsukuba)
11:10   1114   Scaling Down of MOCVD HfSiON to 1nm EOT X. Shi, A. Rothschild, J. L. Everaert, S. Van Elshocht (IMEC), L. Date (AMAT) and M. Schaekers (IMEC)
11:30   1115   Effects of N2 and N2O Post-Plasma Treatments on Hafnium Silicate Gate Dielectrics Grown by Remote Plasma Technique H. Kim, S. Kim, S. Woo, H. Chung, J. Park and H. Jeon (Hanyang University)
11:50   1116   The Approach for Direct Stacking of High-k Dielectrics on Si Y. Nagasato, Y. Iwazaki, M. Hasumi, T. Ueno and K. Kuroiwa (Tokyo University of Agriculture and Technology)
12:10   1117   Achievement of Higher-k and High-Φ in Phase Controlled HfO2 Film Using Post Gate Electrode Deposition Annealing Y. Watanabe (MIRAI-ASET), H. Ota, S. Migita (MIRAI-ASRC), Y. Kamimuta, K. Iwamoto, M. Takahashi, A. Ogawa, H. Ito, T. Nabatame (MIRAI-ASET) and A. Toriumi (The University of Tokyo)
12:30   1118   First-Principles Study of the Electronic and Dielectric Properties of Group IVB Transition Metal Oxides and Silicates. G. Rignanese (Université Catholique de Louvain)
13:00   1119   Impact of Hf-Precursor Choice on Scaling and Performance of High-K Gate Dielectrics G. Wilk (ASM America), J. Maes (ASM Belgium) and A. Delabie (IMEC)
 

Physical/Chemical Characterization

Co-Chair(s): H. Iwai and Z. Karim
TimeAbs#Title and Authors
14:30   1120   Vacancy-Type Defects in MOSFETs with High-k Gate Dielectrics Probed by Monoenergetic Positron Beams A. Uedono, K. Shiraishi, K. Yamabe (University of Tsukuba), S. Inumiya (Selete), Y. Akasaka (Tokyo Electron), S. Kamiyama, T. Matsuki, T. Aoyama, Y. Nara (Selete), S. Miyazaki (Hiroshima University), H. Watanabe (Osaka University), N. Umezawa (National Institute for Materials Science), T. Chikyow (National Institute for Material Science), S. Ishibashi, T. Ohdaira, R. Suzuki (National Institute of Advanced Industrial Science and Technology) and K. Yamada (Waseda University)
15:00   1121   Oxygen Species in HfO2 Films: An in Situ X-Ray Photoelectron Spectroscopy Study C. Driemeier (Universidade Federal do Rio Grande do Sul), R. Wallace (University of Texas at Dallas) and I. Baumvol (UFRGS)
15:20   1122   Interface Reaction of High-k Gate Stack Structures Observed by High-Resolution RBS M. Zhao, K. Nakajima, M. Suzuki, K. Kimura (Kyoto University), M. Uematsu (Keio University), K. Torii (Hitachi Ltd.), S. Kamiyama, Y. Nara (Selete), H. Watanabe (Osaka University), K. Shiraishi (University of Tsukuba), T. Chikyow (National Institute for Material Science) and K. Yamada (Waseda University)
15:50   1123   Interface Characaterization in Nanoelectronics E. Garfunkel, L. Goncharova, S. Rangan, C. Hsueh, O. Celik, R. Bartynski and T. Gustafsson (Rutgers University)
16:20 Intermission (10 Minutes)
 

Metal Gate Electrodes - I

TimeAbs#Title and Authors
16:30   1124   Theoretical Studies on Fermi Level Pining of Hf-Based High-k Gate Stacks Based on Thermodynamics K. Shiraishi (University of Tsukuba), Y. Akasaka (Tokyo Electron), G. Nakamura, M. Kadoshima (Selete), H. Watanabe (Osaka University), K. Ohmori (Waseda University), T. Chikyow (National Institute for Material Science), K. Yamabe (University of Tsukuba), Y. Nara, Y. Ohji (Selete) and K. Yamada (Waseda University)
17:00   1125   Workfunction (WF) Simulations of Ta/HfO2, Ta2C/HfO2 and Ta2C/La2O3/HfO2 Capped High-k Stacks N. Van der Heyden, G. Pourtois, S. De Gendt, M. Heyns (IMEC) and A. Stesmans (Catholic University Leuven)
17:20   1126   The Formation and Characterisation of Lanthanum Based (100)Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation P. Hurley, M. Pijolat, K. Cherkaoui, E. O'Connor and D. O'Connell (Tyndall National Institute)
17:40   1127   Control of Flat Band Voltage by Partial Incorporation of La2O3 or Sc2O3 into HfO2 in Metal/HfO2/SiO2/Si MOS Capacitors M. Adachi, K. Okamoto, K. Kakushima, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori and H. Iwai (Tokyo Institute of Technology)
18:00   1128   Improvement in Fermi-Level Pinning of p-MOS Metal Gate Electrodes on HfSiON by Employing Ru Gate Electrodes M. Kadoshima, Y. Sugita (Selete), K. Shiraishi (University of Tsukuba), H. Watanabe (Osaka University), A. Ohta (Hiroshima Univ.), S. Miyazaki (Hiroshima University), K. Nakajima, T. Chikyow (National Institute for Material Science), K. Yamada (Waseda University), T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara and Y. Ohji (Selete)
 

Tuesday, October 9, 2007

Thoroughbred Room, Concourse Level

Defects and Interfaces

Co-Chair(s): S. De Gendt and P. Hurley
TimeAbs#Title and Authors
08:30   1129   Bonding States and Coverage Calculations for HfO2 Deposited on H2O Terminated Si (100)-2x1 Using Atomic Layer Deposition A. Mathew, R. Opila and B. Willis (University of Delaware)
08:50   1130   Improvement of Interface Properties of W/La2O3/Si MOS Structure Using Al Capping Layer K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori and H. Iwai (Tokyo Institute of Technology)
09:10   1131   Role of the Ionicity in Defect Formation of Hf-Based Dielectrics N. Umezawa (National Institute for Materials Science), K. Shiraishi (University of Tsukuba), S. Miyazaki (Hiroshima University), A. Uedono (University of Tsukuba), Y. Akasaka (Tokyo Electron), S. Inumiya (Toshiba), A. Oshiyama, R. Hasunuma, K. Yamabe (University of Tsukuba), H. Momida, T. Ohno (National Institute for Materials Science), K. Ohmori (Selete), T. Chikyow (National Institute for Material Science), Y. Nara (Selete) and K. Yamada (Waseda University)
09:40 Intermission (20 Minutes)
10:00   1132   Oxygen Transfer from Metal Gate to High-k Gate Dielectric Stack: Interface Structure & Property Changes J. Ha (Stanford University), H. AlShareef, J. Chambers (Texas Instruments), Y. Sun, P. Pianetta (Stanford Synchrotron Radiation Laboratory), P. McIntyre (Stanford University) and L. Colombo (Texas Instruments)
10:20   1133   Instability and Defects in Gate Dielectric: Similarity and Differences Between Hf-Stacks and SiO2 J. F. Zhang, C. Zhao, M. Chang, W. Zhang (Liverpool John Moores University), G. Groeseneken, L. Pantisano, S. De Gendt and M. Heyns (IMEC)
10:50   1134   Bulk and Interfacial Oxygen Defects in HfO2 Gate Dielectric Stacks: A Critical Assessment P. McIntyre (Stanford University)
11:20 Session Concluding Remarks (10 Minutes)
 

Integration

Co-Chair(s): D. Misra and D. Lichtenwalner
TimeAbs#Title and Authors
11:30   1135   Materials and Process Integration Issues in Metal Gate/High-k Stacks and Their Dependence on Device Performance A. Callegari, K. Babich, S. Zafar and V. Narayanan (IBM Semiconductor Research and Development Center (SRDC))
12:00   1136   Challenges with Respect to High-k/Metal Gate Stack Etching and Cleaning R. Vos, S. Arnauts, I. Bovie, B. Onsia, S. Garaud (IMEC), K. Xu (SEZ AG), Y. Hongyu, S. Kubicek, E. Rohr, T. Schram, A. Veloso, L. Leunissen and P. Mertens (IMEC)
 

Non-Hf-Based High-K Materials

Co-Chair(s): S. De Gendt and D. Brunco
TimeAbs#Title and Authors
14:00   1137   Crystalline Rare-Earth Oxides as High-k Materials for Future CMOS Technologies H. Osten (Leibniz University Hannover)
14:30   1138   Screening of High-k Layers in MIS and MIM Capacitors Using Aqueous Chemical Solution Deposition S. Van Elshocht (IMEC), A. Hardy (Hasselt University), C. Adelmann, M. Caymax, T. Conard, A. Franquet, O. Richard (IMEC), M. K. Van Bael, J. Mullens (Hasselt University) and S. De Gendt (IMEC)
14:50   1139   Amorphous Lanthanum Lutetium Oxide Thin Films as an Alternative High-k Material J. M. Lopes, M. Roeckerath, T. Heeg, J. Schubert, U. Littmark, S. Mantl, A. Besmehn (Research Center Juelich), P. Myllymaki and L. Niinistö (Helsinki University of Technology)
15:10   1140   Overview of Materials Processing and Properties of Lanthanum-Based High-K Dielectrics D. J. Lichtenwalner, J. Jur (North Carolina State University), N. Inoue (NEC Kanagawa, Japan) and A. Kingon (North Carolina State University)
15:40 Intermission (20 Minutes)
 

Electrical Characterization

Co-Chair(s): S. Kar and C. Young
TimeAbs#Title and Authors
16:00   1141   Electrical Characterization Methodologies for the Assessment of High-k Gate Dielectric Stacks C. D. Young, G. Bersuker, D. Heh, R. Choi, C. Kang (SEMATECH), J. Tun (Keithley Instruments) and B. Lee (SEMATECH)
16:30   1142   Efficient Gate Capacitance and Current Modeling of High-k Gate Stacks S. Banerjee, L. F. Register, F. Li and M. Hassan (University of Texas)
17:00   1143   High-k Characterization by RFCV E. San Andres (Universidad Complutense de Madrid), L. Pantisano, P. Roussel (IMEC), M. Toledano-Luque (UCM), L. Trojman, S. Severi, S. DeGendt and G. Groeseneken (IMEC)
17:30   1144   In-Line Non-Contact Micro-Kelvin Measurements Applied to ZrO/AlO/ZrO Dielectric Stacks in the Active Capacitor Cell Areas of Advanced DRAM J. Kim, C. Kim, H. Kim, C. Lee, T. Kim (Hynix Semiconductor, Inc.), J. D'Amico, M. Wilson, M. Wilson (Semiconductor Diagnostics, Inc.), S. Kim and S. Park (Metron Technology Korea Ltd.)
17:50   1145   Characterization of Electrically Active Interfacial Defects in High-k Gate Dielectrics E. Vogel (The University of Texas at Dallas)
 

Exhibit Hall, Concourse Level

Poster

Co-Chair(s): S. Kar
TimeAbs#Title and Authors
o   1146   Hydrogen Trapping in Oxygen-Deficient Hafnium Silicates C. Driemeier (Universidade Federal do Rio Grande do Sul), L. Fonseca, M. Ribeiro, A. Xavier (Wernher von Braun Center for Advanced Research) and I. Baumvol (UFRGS)
o   1147   Atomic Layer Deposition of HfO2 on (100) and (110) Orientated Silicon Surfaces L. Nyns, L. Ragnarsson (IMEC), L. Hall (ST Microelectronics), A. Delabie, M. Heyns, S. Van Elshocht (IMEC), C. Vinckier (KULeuven), P. Zimmerman (Intel) and S. De Gendt (IMEC)
o   1148   Structural and Morphological Properties of Nitrogen Doped Polysilicon for Advanced Gate Material S. Woo, Y. Kim, P. Um, H. Kim, S. Cho, H. Choe, D. Lee (Eugene Technology) and C. Kim (Ajou University)
o   1149   Investigation of Conducting Oxide and Metal Electrode Work Functions on Lanthanum Silicate High-k Dielectric H. Lee (Yeungnam University), D. J. Lichtenwalner, J. Jur and A. Kingon (North Carolina State University)
o   1150   Workfunction Engineering of Hf-Silicate Films Using Ni/Ti and Pt/Ti Bi-Layered Metal Electrodes M. Lee, H. Kim, Y. Byun (Sungkyunkwan University), K. Park (An Institute of Technology), A. Chee Hong and S. Whang (Sungkyunkwan University)
o   1151   Dysprosium Scandate Thin Films Prepared by Metal Organic Chemical Vapor Deposition on Pt/Ti/SiO2/Si Substrates for MIM Capacitor Applications. R. Thomas, N. K. Karan (University of Puerto Rico), P. Ehrhart, R. Waser (Institute für Festkörperforchung (IFF), Forchungszentrum Juelich, Germany) and R. Katiyar (University of Puerto Rico)
 

Wednesday, October 10, 2007

Thoroughbred Room, Concourse Level

High Mobility Substrates

Co-Chair(s): M. Houssa and A. Toriumi
TimeAbs#Title and Authors
08:00   1152   In-Situ Studies on Stability and Oxidation of Single Crystal (100) InAs Surfaces C. Chang (Harvard University), V. Shutthanandan, S. Singhal (Pacific Northwest National Laboratory) and S. Ramanathan (Harvard University)
08:20   1153   Experimental Study of ALD HfO2 Deposited on Strained Silicon-on-Insulator (sSOI & xsSOI) and SOI D. Gu, K. Tapily, P. Shrestha, H. Baumgart (Old Dominion University) and G. Celler (SOITEC)
08:40   1154   In-Situ Deposition of High-k Gate Stack on MBE Grown InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with High Channel Mobility and Low Equivalent Oxide Thickness R. Kambhampati (University at Albany - SUNY), S. Koveshnikov (Intel Corporation), V. Tokranov, M. Yakimov, R. Moore (University at Albany - SUNY), W. Tsai (INTEL) and S. Oktyabrsky (University at Albany - SUNY)
09:00   1155   Oxide Bonding to the Group III and Group V Rich Reconstructions of InGaAs(100)/InP and InAs(100) A. C. Kummel, D. L. Winn, J. Shen, J. Clemens and T. Song (University of California, San Diego)
09:30 Intermission (20 Minutes)
09:50   1156   Electrical Passivation of the (100)Ge Surface by Its Thermal Oxide F. Bellenger, M. Houssa, A. Delabie, M. Caymax (IMEC), M. Meuris (IMEC, Kapeldreef 75, B-3001 Leuven, Belgium), K. De Meyer and M. Heyns (IMEC)
10:10   1157   Dramatic Improvement of GeO2/Ge MIS Characteristics by Suppression of GeO Volatilization K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura and A. Toriumi (The University of Tokyo)
10:30   1158   First-Principles Investigation of (100)Ge/Ge(Hf)O2 Interfaces M. Houssa, G. Pourtois, M. Caymax (IMEC), M. Meuris (IMEC, Kapeldreef 75, B-3001 Leuven, Belgium) and M. Heyns (IMEC)
10:50   1159   Germanium: The Past and Possibly a Future Material for Microelectronics D. P. Brunco (IMEC)
 

High-K Memories

Co-Chair(s): D. Landheer and Z. Karim
TimeAbs#Title and Authors
11:20   1160   A Morphological, Chemical and Electrical Study of HfSiON Films Properties for Interpoly Dielectric Applications in Flash Memories A. Del Vitto, R. Piagge, M. Caniatti (STMicroelectronics), C. Wiemer (CNR-INFM), G. Pavia, F. Sammiceli, E. Ravizza, S. Grasso, S. Spadoni, A. Sebastiani, C. Scozzari, G. Ghidini (STMicroelectronics), C. Pomarede (ASM America), J. Maes (ASM Belgium) and M. Alessandri (STMicroelectronics)
11:40   1161   Nonvolatile Memories Based on Nanocrystalline Zinc Oxide Embedded Zirconium-doped Hafnium Oxide High-k Thin Films J. Lu and Y. Kuo (Texas A&M University)
12:00   1162   Enhancement of Multiple Level Cell Endurance Property by Using HfO2/ZrO2 Charge Storage Layer G. Zhang and W. Yoo (Sungkyunkwan University)
 

Metal Gate Electrodes - II

Co-Chair(s): S. Kar and K. Shiraishi
TimeAbs#Title and Authors
14:00   1163   What is the Essence of VFB Shifts in High-k Gate Stack? T. Nabatame (MIRAI-ASET), H. Ota (MIRAI-ASRC) and A. Toriumi (The University of Tokyo)
14:30   1164   AVD and MOCVD TaCNO-based Films for Gate Metal Applications on High k Gate Dielectrics Z. Karim, G. Barbar, O. Boissière, P. Lehnen, C. Lohe, T. Seidel (AIXTRON), C. Adelmann, T. Conard, B. O'Sullivan, L. Ragnarsson, S. Van Elshocht and S. De Gendt (IMEC)
14:50   1165   Ultra-Thin Ruthenium Films by Pulsed Chemical Vapor Deposition B. C. Hendrix, J. J. Welch, J. F. Roeder, Z. Wang, C. Xu, M. Stawasz and T. Baum (Advanced Technology Materials, Inc.)
15:10   1166   Physical and Electrical Properties of Molybdenum and its Conductive Oxides as p-Type Metal Gate Candidates Z. Li, T. Schram, T. Witters (IMEC), H. Cho (Samsung), B. O'Sullivan (IMEC), J. Hooker (NXP), S. De Gendt and K. De Meyer (IMEC)
15:30   1167   High Performance Gate-First pMISFET with TiN/HfSiON Gate Stacks Fabricated with PVD-Based In-Situ Method T. Kawahara, Y. Nishida, S. Sakashita, J. Yugami (Renesas Technology Corp.), N. Kitano, T. Minami, M. Kosuda (Canon ANELVA Corporation), S. Horie (Renesas Technology Corp.), H. Arimura, T. Shimura and H. Watanabe (Osaka University)
16:00 Intermission (20 Minutes)
 

Reliability Issues

Co-Chair(s): D. Misra and D. Lichtenwalner
TimeAbs#Title and Authors
16:20   1168   Microscopic Understanding of PBTI and NBTI Mechanisms in High-k / Metal Gate Stacks M. Sato (Selete), K. Yamabe, K. Shiraishi (University of Tsukuba), S. Miyazaki (Hiroshima University), K. Yamada (Waseda University), C. Tamura, R. Hasunuma (University of Tsukuba), S. Inumiya, T. Aoyama, Y. Nara and Y. Ohji (Selete)
16:50   1169   Role of Bulk HfO2 and Interfacial SiO2 Layer in Breakdown Characteristics of TiN/HfO2/SiO2/Si Gate Stacks N. Rahim (New Jersey Institute of Technology), N. Chowdhury (Spansion) and D. Misra (New Jersey Institute of Technology)
17:10   1170   Determination of the Coulomb Scattering Parameter (Alpha) for ALD HfO2/TiN Gate n and p-MOSFETs Using Negative Bias Temperature Stress M. Negara, K. Cherkaoui (Tyndall National Institute), P. Majhi (Sematech), W. Tsai (INTEL), D. Bauza, G. Ghibaudo (IMEP) and P. Hurley (Tyndall National Institute)
17:30   1171   Modeling and Simulation of Drain Current 1/f Noise in High-k Based n-MOSFETs P. Srinivasan, D. Misra (New Jersey Institute of Technology), C. Claeys (IMEC) and E. Simoen (IMEC, Belgium)
17:50 Symposium Concluding Remarks (10 Minutes)