212th ECS Meeting - Washington, DC

October 7 - October 12, 2007

PROGRAM INFORMATION
 

E8 - State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47)

Electronics and Photonics
 

Monday, October 8, 2007

Dupont Room, Terrace Level

Compound Semiconductor Growth and Processes Technology

Co-Chair(s): J. Zhou and J. Wang
TimeAbs#Title and Authors
10:30   1249   End Point Detection of GaAs Backside Via Etching in Capacitor on Via P. Nam, W. Luo, X. Zeng, J. Wang, J. Uyeda, M. Biedenbender, D. Farkas, M. Barsky and S. Olson (Northrop Grumman Space Technology)
11:00   1250   Theoretical and Experimental Design of Resonant Cavity Light Emitting Diodes on Si Substrates M. Mastro, R. Holm, R. Henry and C. Eddy Jr. (Naval Research Laboratory)
11:30   1251   High Performance ZnO Thin Film Transistors Fabricated on Both Glass and Flexible Substrates C. Liu, Y. Chen, M. Wu (Graduate Institute of Electro-optical Engineering, National Taiwan University) and J. Huang (National Taiwan University)
 
Co-Chair(s): P. Nam and J.Kim
TimeAbs#Title and Authors
14:00   1252   Frequency Response and Devices Performance of the Indium Zinc Oxide Thin Film Transistors Y. Wang (University of Florida), F. Ren (University of Florida, Chemical Engineering), L. Covert, J. Lin, W. Lim (University of Florida) and S. Pearton (University of Florida, Chemical Engineering)
14:20   1253   S-MMIC InP HEMT Amplifiers Enabled by the Advanced InP Backside Processes J. Zhou, X. Mei, R. Elmadjian, C. Geiger, X. Zeng, C. Cheung, F. Dai, R. Johnson, K. Luo, J. Wang, J. Uyeda, B. Warner, M. Barsky, S. Olson, W. Dean, V. Radisic and R. Lai (Northrop Grumman Space Technology)
14:50   1254   Formation of PbSe-PbTe Superlattices by Electrochemical Atomic Layer Deposition (ALD) on Gold Substrates D. Banga and J. L. Stickney (University of Georgia)
15:10   1255   Properties of the State-of-the-Art Bulk and Homoepitaxial Films of III-V Nitride Semiconductors J. A. Freitas (Naval Research Laboratory)
15:40   1256   Resistive Non-Volatile Memory Effect Enhanced by a Ferroelectric Buffer Layer on Semiconductive Pr0.7Ca0.3MnO3 Film Z. Xing, N. Wu and A. Ignatiev (University of Houston)
16:00 Intermission (20 Minutes)
16:20   1257   Homoepitaxial Growth of Semi-Insulating 4H-SiC by Metal-Organic Precursors H. Kim and H. Song (Seoul National University)
16:50   1258   The Chemical Vapor Deposition Growth of GaAs-Based GaAsSb-GaAsN Type-II Quantum Well 'W' Structures for Mid-IR T. Kuech, M. Rathi, A. Khandekar, D. Xu, J. Huang, J. Park, L. Mawst, X. Song and S. Babcock (University of Wisconsin - Madison)
17:10   1259   The Enhancement of THz Radiation Semiconductor Induced by Conjugate Polymer (DB-PPV) J. Hwang, H. Lin, Y. Huang and K. Lin (National Cheng Kung University)
17:30   1260   Overcoming Contact Hurdles for Investigating Lower Dimensional Structures in Undoped Heterostructures S. J. Sarkozy, K. Das Gupta, F. Sfigakis, I. Farrer, H. Beere, R. Harrell, D. Ritchie and G. Jones (University of Cambridge)
 

Tuesday, October 9, 2007

Dupont Room, Terrace Level

SiC and GaN Materials

Co-Chair(s): H. C. Kuo and J. Kim
TimeAbs#Title and Authors
08:00   1261   Rapid Electrical Detection of Hg(II) Ions with AlGaN/GaN High Electron Mobility Transistors H. Wang, B. Kang, T. Chancellor, T. Lele, Y. Tseng, F. Ren, S. Pearton (University of Florida, Chemical Engineering), W. Johnson, P. Rajagopal, J. Roberts, E. Piner and K. Linthicum (Nitornex Corporation)
08:20   1262   In1-xGaxN Nanorods and Nanowires: Growth, Characterizations and Applications O. Kryliouk (Applied Materials)
08:50   1263   Performance Evaluation of III-Nitride Avalanche Photodiodes Grown on SiC and GaN Substrates Y. Zhang, D. Yoo, J. Limb, J. Ryou, R. D. Dupuis, S. Shen, M. Britt and P. D. Yoder (Center for Compound Semiconductors and School of Electrical and Computer Engineering)
09:20   1264   Monolayer Formation on GaN Surface via Self-Assembly T. Ito, S. Forman, C. Cao (Kansas State University), C. Eddy Jr., M. Mastro, R. Holm, R. Henry (Naval Research Laboratory), K. Hohn and J. Edgar (Kansas State University)
09:50   1265   Growth of InN by Plasma-Assisted Molecular Beam Epitaxy on InN and p-GaN Templates E. D. Readinger, G. Chern, M. Reed, P. Shen, M. Wraback (US Army Research Laboratory), A. Syrkin, A. Usikov, O. Kovalenkov, V. Ivantsov and V. Dmitriev (Technologies and Devices International, Inc.)
10:10 Intermission (20 Minutes)
10:30   1266   Structural and Chemical Studies via TEM and EELS of the SiC - MOS Structures T. Zheleva, A. Lelis (US Army Research Lab), G. Dusher, F. Liu (North Carolina State University), M. Das (CREE, Inc.) and J. Scofield (Air Force Research Lab)
10:50   1267   Enhanced Light Extraction Efficiency in InGaN Light-Emitting Diodes Through Photoelectrochemical Sidewall Shaping Process C. Lin and C. Yang (Department of Materials Science and Engineering)
11:20   1268   Fabrication of Crack-Free Metal-Semiconductor-Metal Ultraviolet Photodetectors on Si (111) Substrates Based on Novel AlN/AlGaN Buffer Multilayer Scheme R. W. Chuang and S. J. Chang (National Cheng Kung University)
11:40   1269   Effect of the Combination of Spray Pyrolysis and Flame Oxidation Synthesis of Carbon Modified (CM)-n-TiO2 Thin Film Electrode on Solar to Hydrogen Production Efficiency From Water Y. A. Shaban and S. Khan (Duquesne University)
 

Exhibit Hall, Concourse Level

Co-Chair(s): J. Wang
TimeAbs#Title and Authors
o   1270   Electrodeposition of Tellurium Atomic Layer on n-GaAs(100) Substrate J. Y. Kim and J. L. Stickney (University of Georgia)
o   1271   Role of Ni in Rh/Au-based Schottky Contact to n-GaN F. Tian and E. Chor (National University of Singapore)