213th ECS Meeting - Phoenix, AZ

May 18 - May 22, 2008

PROGRAM INFORMATION
 

E2 - Chemical Mechanical Polishing 9

Dielectric Science and Technology
 

Tuesday, May 20, 2008

Room 103B, 100 Level, Phoenix Convention Center

Metal CMP

Co-Chair(s): J. Talbot and V. Desai
TimeAbs#Title and Authors
08:10   682   Chemical Mechanical Planarization Historical Review and Future Direction G. Banerjee (Air Products & Chemicals, Inc.) and R. Rhoades (Entrepix, Inc.)
09:00   683   eCMP of Copper in Phosphoric Acid Solutions D. J. Duquette and A. Mansson (Rensselaer Polytechnic Institute)
09:40 Intermission (20 Minutes)
10:00   684   Cu Surface Morphology Evolution during Electropolishing S. Shivareddy, S. -E. Bae and S. R. Brankovic (University of Houston)
10:25   685   Characterization of Phosphate Electrolytes for use in Cu Electrochemical Mechanical Planarization K. G. Shattuck (Columbia University), J. Lin (National Tsing-Hua University) and A. West (Columbia University)
10:50   686   Local Corrosion by Film Stress and Solution Temperature during CMP M. Kang, Y. Kim and J. Kim (Seoul National University)
11:15   687   Chemical Mechanical Planarization of Ruthenium S. Venkataraman and Y. Li (Clarkson University)
 

Consumables Development and Process Optimization

Co-Chair(s): K. Sundaram and Y. Obeng
TimeAbs#Title and Authors
13:30   688   CMP Process Development Techniques for New Materials R. L. Rhoades (Entrepix, Inc.)
14:10   689   Modeling Copper CMP Material Removal Rates Using Copper Surface Nanohardness R. V. Ihnfeldt and J. Talbot (University of California, San Diego)
14:35   690   Effect of Organic Amine in Colloidal Silica Slurry on Polishing-rate Selectivity of Copper to Tantalum-nitride Film in Copper Chemical Mechanical Planarization J. Park, H. Cui, H. Hwang, U. Paik and J. Park (Hanyang University)
15:00 Intermission (20 Minutes)
15:20   691   Effect of Wettability of Silicon and Poly Silicon on Polishing Performance Y. Kang, B. Kang, J. Park (Hanyang University), Y. Hong, S. Han, S. Yun, B. Yoon and C. Hong (Samsung Electronics)
15:45   692   Effect of Alkaline Agent with Organic Additive in Colloidal Silica Slurry on Polishing Rate Selectivity of Polysilicon-to-SiO2 in Polysilicon CMP H. Hwang, H. Kang, J. Park, U. Paik and J. Park (Hanyang University)
16:10   693   Enhancement of Selectivity of Oxide-to-Nitride Films on Organic Additive in Nano-ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing H. Kang, J. Park, H. Cui, U. Paik and J. Park (Hanyang University)
16:35   694   STI Post CMP Cleaning Solution Development D. Tamboli, G. Banerjee, P. Subramanian and M. B. Rao (Air Products & Chemicals, Inc.)