213th ECS Meeting - Phoenix, AZ

May 18 - May 22, 2008

PROGRAM INFORMATION
 

E3 - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing

Dielectric Science and Technology
 

Monday, May 19, 2008

Room 102A, 100 Level, Phoenix Convention Center

Alternate Gate Dielectrics

Co-Chair(s): H. Iwai and D. Misra
TimeAbs#Title and Authors
10:30 Introductory Remarks (5 Minutes)
10:35   695   Replacing SiO2 - Material and Processing Aspects of New Dielectrics S. De Gendt, C. Adelmann, A. Delabie (IMEC), L. Nyns (IMEC and KULeuven), G. Pourtois and S. Van Elshocht (IMEC)
11:05   696   Relation Between Solubility of Silicon in High-k Oxides and the Effect of Fermi Level Pinning N. Umezawa (National Institute for Materials Science), K. Shiraishi (University of Tsukuba), K. Kakushima, H. Iwai (Tokyo Institute of Technology), K. Ohmori, K. Yamada (Waseda University) and T. Chikyow (NIMS)
11:35   697   Theory of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits- K. Shiraishi (University of Tsukuba), T. Nakayama (Chiba University), T. Nakaoka (University of Tsukuba), A. Ohta and S. Miyazaki (Hiroshima University)
12:05   698   Impact of Thin La2O3 Insertion for HfO2 MOSFET K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, S. Sato, T. Kawanago, J. Song, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori and H. Iwai (Tokyo Institute of Technology)
 

Nanostructured Dielectrics and Materials

Co-Chair(s): T. Chikyow and J. Vanhellemont
TimeAbs#Title and Authors
14:00   699   Building Dielectric Materials from the Bottom Up: Nano-Structured Materials H. Grebel (NJIT)
14:30   700   Nanotechnology in Silicon CMOS Fabrication M. Meyyappan (NASA Ames Research Center)
15:00   701   Quantum Effects of Capacitance in Nano-Scale Devices K. Uchida (University of Tokyo)
15:30   702   Gas Sensing Devices Based on 1D Metal-Oxide Nanostructures: Fabrication, Testing and Device Integration A. Romano-Rodriguez, F. Hernandez-Ramirez, R. Jimenez-Diaz, O. Casals (University of Barcelona), S. Barth and S. Mathur (Leibniz Institute of New Materials)
 

Dielectric Characterization

Co-Chair(s): K. Uchida and K. Shiraishi
TimeAbs#Title and Authors
16:00 Intermission (10 Minutes)
16:10   703   Photoemission Study of Metal/HfSiON Gate Stack S. Miyazaki, H. Yoshinaga, A. Ohta (Hiroshima University), Y. Akasaka (Selete), K. Shiraishi (University of Tsukuba), K. Yamada (Waseda University), S. Inumiya, M. Kadoshima (Selete) and Y. Nara (Semiconductor Leading Edge Technologies)
16:40   704   Application of Synchrotron X-ray Diffraction Methods to Gate Stacks of Advanced MOS Devices T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi (Osaka University), A. Ogura (Meiji University), O. Sakata, S. Kimura (Japan Synchrotron Radiation Research Institute), H. Edo, S. Iida (University of Toyama) and H. Watanabe (Osaka University)
17:10   705   MIMC Reliability and Electrical Behavior Defined by a Physical Layer Properties of the Dielectric R. Charavel, J. Ackaert and K. Dhont (AMIS)
17:30   706   Breakdown Characteristics of High-k Gate Dielectrics with Metal Gates N. Rahim and D. Misra (New Jersey Institute of Technology)
 

Tuesday, May 20, 2008

Room 102A, 100 Level, Phoenix Convention Center

Enabling Metrology and Processes for Nanosystems

Co-Chair(s): Y. Obeng and T. Shimura
TimeAbs#Title and Authors
08:00   707   An Overview of Recent Advances in Metrology Development for Nanoelectronics at the National Institute of Standards and Technology (NIST) Y. Obeng, S. Knight and J. Martinez de Pinillos (NIST)
08:30   708   The Impact of the Dielectric/Semiconductor Interface on Microstructure and Charge Carrier Transport in High-Performance Polythiophene Transistors Y. Jung, R. Kline, E. K. Lin, D. A. Fischer (National Institute of Standards and Technology), M. F. Toney (Stanford Synchrotron Radiation Laboratory), M. Heeney (Department of Materials, Queen Mary, University of London), I. McCulloch and D. DeLongchamp (Department of Chemistry, Imperial College of London)
09:00   709   The Challenge of Measuring Defects in Nanoscale Dielectrics K. P. Cheung and J. S. Suehle (NIST)
09:30 Intermission (20 Minutes)
09:50   710   Superconformal Film Growth: Mechanism and Quantification T. Moffat, D. Wheeler and D. Josell (NIST)
10:20   711   In Situ Gas Phase Diagnostics for Hafnium Oxide Atomic Layer Deposition J. E. Maslar, W. Hurst, D. Burgess, W. Kimes, N. V. Nguyen and E. Moore (NIST)
10:50   712   Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO2 for the Advanced Gate Stack K. Chang, M. Green, J. S. Suehle, J. Hattrick-Simpers (NIST), I. Takeuchi (U of Maryland, College Park.), K. Ohmori (Waseda University), T. Chikyo (NIMS, Japan), S. De Gendt (IMEC) and P. Majhi (Sematech, TX)
11:20   713   Interface Barrier Determination by Internal Photoemission: Applications to Metal/Oxide/Semiconductor Structure N. V. Nguyen, O. A. Kirillov, W. Jiang, J. E. Maslar, W. Kimes and J. S. Suehle (NIST)
11:50   714   Scanning Probe Microscopy for Dielectric and Metal Characterization J. J. Kopanski (NIST)
 

Optical Applications

Co-Chair(s): S. Miyazaki and H. Grebel
TimeAbs#Title and Authors
14:00   715   a-Si:H Metal-Semiconductor-Metal (MSM) Photoconductor Based Pixel Arrays for Biomolecular Imaging Applications K. S. Karim, I. Khodami and F. Taghibakhsh (University of Waterloo)
14:30   716   A New Physics Effect, Phonon-Energy-Coupling Enhancement, and Its Applications for Leakage Current Reduction of Gate Dielectrics Z. Chen (University of Kentucky)
 

Process Integration and Manufacturing

Co-Chair(s): K-S. Chang and J. Maslar
TimeAbs#Title and Authors
15:00   717   Control of Crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices K. Ohmori (Waseda University), T. Chikyow (NIMS), T. Hosoi, H. Watanabe (Osaka University), K. Nakajima, T. Adachi, A. Ishikawa (National Institute for Materials Science), Y. Sugita, Y. Nara, Y. Ohji (Semiconductor Leading Edge Technologies), K. Shiraishi, K. Yamabe (University of Tsukuba) and K. Yamada (Waseda University)
15:30   718   Contamination Free Manufacturing of Semiconductor Devices for High Reliability J. Prasad (AMI Semiconductor)
15:50   719   Properties of Atomic Layer Deposited Y2O3 Thin Films using Novel Cyclopentadienyl-type Yttrium Precursor P. Majumder (University of Illinois at Chicago), G. Jursich (American Air Liquide) and C. Takoudis (University of Illinois at Chicago)
16:10 Intermission (20 Minutes)
16:30   720   Practical Gate-First Metal Gate/Dual High-k CMOS Integration with Low Threshold Voltages Y. Nara, N. Mise (Semiconductor Leading Edge Technologies), M. Kadoshima (Selete), T. Morooka, S. Kamiyama, T. Matsuki, M. Sato, T. Ono, T. Aoyama, T. Eimori and Y. Ohji (Semiconductor Leading Edge Technologies)
17:00   721   Promotion of ESD-CDM Immunity in Dicing Saw Process M. Wang (Ming-Hsin University of Science and Technology), K. Huang (Generalplus company), Z. Hsieh and H. Huang (National Taipei University of Technology)
17:20   722   Anomalous Field Transistor BTI Failure Mechanism in an 80V Technology B. N. Williams, F. Bauwens, T. Haskett, S. Vandeweghe, T. A. Corsetti (ON Semiconductor) and R. E. Lappan (ON Semiconductor,)
 

Hall 2, Lower Level, Phoenix Convention Center

Poster Session

Co-Chair(s): D. Misra and H. Iwai
TimeAbs#Title and Authors
o   723   Novel Non-Oxidative Aqueous Cleaning Solutions for Tungsten Layers J. Park, S. Kim and D. Lee (Samsung Electronics)
o   724   Optimization of Growth Parameters in Electron Beam Induced Orientation Selective Epitaxy of CeO2(100)/Si(100) Structures T. Inoue, H. Ohtake, J. Otani and S. Shida (Iwaki Meisei University)
o   725   The Role of Borophosphosilicate Chemistry in Heterogeneous Nucleation Y. V. Sokolov and Q. Wang (Fairchild Semiconductor Corp)
o   726   Metal-Ferroelectric-Insulator-Silicon (MFIS) Devices based on DyScO3 Buffer Layer and Bi3.25Nd0.75Ti3O12 Ferroelectrics R. Thomas, R. Melgarejo, D. Pradhan, N. Karan, J. Saavedra-Arias and R. Katiyar (University of Puerto Rico)
o   727   Quenching of Photoluminescence from Si Nanocrystals in SiO2 Layers Under Ion-Beam Irradiation: Analysis of Experimental Data V. A. Stuchinsky, S. G. Cherkova, G. A. Kachurin and D. V. Marin (Institute of Semiconductor Physics SD RAS)
o   728   Microwave Dielectric Properties of Pb-Mg-Nb-O and Pb-Zn-Nb-O Thin Films S. Yoon, G. Choi, K. Hong (Seoul National University) and K. Ko (Ajou University)
o   729   Sp2 Carbon Phases in Nano Diamond. D. Ballutaud, F. Jomard, M. Pinault (CNRS) and N. Simon (UVSQ)
o   730   Ion Implantation: A Method of Producing Low-k Silicon Oxide-based Materials E. Leoni (CNRS), D. De Sousa Meneses (CEMHTI - Conditions Extrêmes et Matériaux : Haute Température et Irradiation), M. Canino, G. Regula (Laboratoire TECSEN, Université Paul Cézanne Aix-Marseille III) and E. Ntsoenzok (CEMHTI - Conditions Extrêmes et Matériaux : Haute Température et Irradiation)
o   731   Monte Carlo Based Weibull Lifetime Uncertainty Calculations and Statistical Comparison of Semiconductor Manufacturing Process Module Changes for Lifetime Improvement J. Prasad and B. Greenwood (AMI Semiconductor)
o   665   Measurement of the Stability and Investigation of the Rupture Behavior of Semiconductor Line Nanostructures by AFM D. Peter, M. Dalmer, H. Kruwinus (SEZ AG), A. Lechner (University of Applied Sciences Regensburg), L. Archer (SEZ America Inc.), E. Gaulhofer (SEZ AG) and W. Bensch (Christian Albrechts Universität zu Kiel)
 

Wednesday, May 21, 2008

Room 102A, 100 Level, Phoenix Convention Center

Alternate Devices and Memory

Co-Chair(s): W. Tseng and H. Saitoh
TimeAbs#Title and Authors
08:00   732   Advanced Metal Gate FinFET CMOS TEchnology Y. Liu (AIST Tsukuba Central 2), T. Matsukawa, K. Endo, M. Masahara, S. Ouchi, K. Ishii, K. Sakamoto and E. Suzuki (AIST)
08:30   733   Growth of Fluoride Quantum Well Heterostrucutres for Resonant Tunneling Devices on Si Substrates K. Tsutsui (Tokyo Institute of Technology)
09:00   734   Evaluation and Control of Strain in Si Induced by Patterned SiN Stressor H. Saitoh, D. Kosemura, Y. Kakemura, T. Yoshida, M. Takei, A. Ogura (Meiji University), T. Koganezawa, I. Hirosawa (JASRI), M. Kohno, T. Nishita and T. Nakanishi (TOKYO ELECTRON AT)
09:30 Intermission (20 Minutes)
09:50   735   Electrical and Reliability Characteristics in Strained-Si MOSFETs C. Yang, T. Pan (Chang Gung University) and C. Liu (Ming Chuan University)
10:10   736   Inorganic and Organic Ferroelectric Thin Films for Memory Applications H. Ishiwara (Tokyo Institute of Technology)
10:40   737   Enhancement in Thermal Stability of Metal-Insulator-Metal Capacitors for Deep Trench DRAM Application C. Hsieh (Nanya Technology Corp.), T. Pan (Chang Gung University), T. Huang, W. Liang (Nanya Technology Corp.) and J. Lin (Chang Gung University)
 

Low-K Dielectrics

Co-Chair(s): K. Ohmori and M. Wang
TimeAbs#Title and Authors
11:00   738   Characterization of ULK Material Properties Shifts Due to Liner CMP Slurries W. Tseng (IBM), D. Kioussis (AMD) and S. L. Manikonda (SUNY, Albany)
11:30   739   Metal Surface Characterization for Understanding of Electrical Properties on Aluminum Interconnects A. Otake, T. Aoki and D. Maloney (DuPont Electronic Technology)
11:50 Symposium Concluding Remarks (5 Minutes)