214th ECS Meeting - Honolulu, HI

October 12 - October 17, 2008

PROGRAM INFORMATION
 

E6 - Low k Inter-Level Metal Dielectrics and New Contact and Barrier Metallurgies/Structures

Dielectric Science and Technology
 

Tuesday, October 14, 2008

Room 302B, Level 3, Hawaii Convention Center

Conductor & Barrier Films and CMP

Co-Chair(s): G.S. Mathad and J. Flake
TimeAbs#Title and Authors
08:20   2060   A New Leveler for Copper Interconnect Deposition in High Aspect-Ratio Trenches H. Tsai, Y. Chang, P. Tsai (National Chiao Tung University) and P. Wu (National Chiao-Tung University)
08:40   2061   A Novel Fabrication of Cu-Mn Alloy Films by Chemical Displacement Process L. Lin, Y. Wen-Luh and D. Ming-Jie (Feng-Chia University)
09:00   2062   Surface Treatments of the Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx Diffusion Barriers for Copper Metallization C. Chang, C. Chen and F. Pan (National Chiao Tung University)
09:20   2063   High Rate Etching of Ru and TaN using Electrochemical Reaction for Bevel Cleaning H. Aoki, D. Watanabe, N. Ooi, J. Jeong, C. Kimura and T. Sugino (Osaka University)
09:40 Intermission (20 Minutes)
10:00   2064   Controlling Scratching in Cu Chemical-Mechanical Planarization (CuCMP) T. Eusner, N. Saka, J. Chun (MIT), S. Armini (IMEC), M. Moinpour and P. Fischer (Intel)
10:20   2065   The Effect of Hydrogen Plasma Treatment prior to Barrier Metal Deposition on Line-shaped Copper Missing Defect in Copper Dual Damascene Process S. Kim, B. Lee, H. Lee, M. Lee, S. Oh, J. Hong and J. Han (Dongbu Hitek)
 

Electro Migration 1

Co-Chair(s): H. Rathore and G.S. Mathad
TimeAbs#Title and Authors
10:40   2066   The Effect of a Threshold Failure Time on Electromigration Behavior of Copper Interconnects R. G. Filippi, J. Lloyd (IBM Corporation), P. Wang (IBM), A. Brendler, J. Poulin (IBM Corporation), J. Demarest (IBM) and B. Redder (IBM Corporation)
11:10   2067   Blech Effect in Copper Interconnects, Its Applications and Design Considerations P. Wang (IBM), R. G. Filippi (IBM Corporation), C. Christiansen, B. Li and H. Ding (IBM)
11:40   2068   Tensile and Compressive Failures of Cu/low-k Interconnect Trees C. Thompson and F. Wei (MIT)
 

Electro Migration 2

TimeAbs#Title and Authors
13:40   2069   Solder Bump Electromigration and CPI Challenges in Low k Devices R. Susko, T. Daubenspeck, T. Wassick, T. Sullivan, W. Sauter and J. Cincotta (IBM)
14:10   2070   Effects of Grain Structure on Electromigration of Cu Interconnects P. S. Ho (The University of Texas at Austin), E. Zschech, A. Meyer (AMD Saxony LLC & Co. KG, Center for Complex Analysis, Dresden, Germany), M. Hauschildt (Freescale Semiconductor Inc., Austin, TX) and M. Kraatz (The University of Texas at Austin, Microelectronics Research Center, Austn, TX)
14:40   2071   Enhanced Electromigration in Cu Interconnects Using Upper Level Dummy Vias C. Hu (IBM T.J. Watson Research Center), S. Greco, P. McLaughlin, L. Gignac, E. Liniger, J. Demarest, E. Huang and C. Yang (IBM)
15:10 Intermission (20 Minutes)
 

Low-k ILD Technologies

Co-Chair(s): J. Flake and G.S. Mathad
TimeAbs#Title and Authors
15:30   2072   The Need for Ultra Low-k Dielectrics Based on Transistor Scaling - Callinan Award Presentation P. A. Kohl (Georgia Institute of Technology)
16:10   2073   Extendibility of Cu/low-k/airgap BEOL D. Edelstein (IBM Watson Research Center, Yorktown Heights, New York 10598 USA)
16:40   2074   Self-Assembly Based Air-Gap Integration S. Ponoth (IBM), D. Horak (IBM Systems and Technology), S. Nitta, M. Colburn, G. Breyta (IBM Research), E. Huang (IBM), J. Sucharitaves, H. Landis, A. Lisi (IBM Systems and Technology), X. Liu (IBM Research), T. Vo (IBM Systems & Technology Group), R. Johnson, W. Li (IBM Systems and Technology), S. Purushothaman (IBM Research), S. Cohen (IBM Watson Research Center, Yorktown Heights, New York 10598 USA), C. Hu (IBM T.J. Watson Research Center), H. Kim (IBM Research), L. Clevenger (IBM Systems and Technology), N. Fuller, T. Nogami (IBM Research), T. Spooner (IBM Systems and Technology) and D. Edelstein (IBM Watson Research Center, Yorktown Heights, New York 10598 USA)
17:10   2075   Comparison Between Dielectric Properties of Airgap and ULK Interconnects C. Guedj, V. Verriere, F. Gaillard (CEA LETI-Minatec), R. Gras (ST Microelectronics), E. Martinez (CEA-LETI), M. Sabardeil and J. Roux (Hamamatsu France)
17:30   2076   Lightly Porous SiCOH 2.7 Dielectric Film Development for 65/45/32 nm Advanced Nanoelectronic CMOS Devices S. V. Nguyen (IBM Research at Albany Nanotech), V. McGahay (IBM Advanced Semiconductor Research and Development Center, Hopwell Junction, New York 12203 USA), M. Sherwood (IBM Almaden Research Center, San Jose, CA 95120 USA), N. Klymko (IBM Advanced Semiconductor Research and Development Center, Hopwell Junction, New York 12203 USA), S. Cohen, E. Simonyi, A. Grill (IBM Watson Research Center, Yorktown Heights, New York 10598 USA), H. Shobha (IBM Semiconductor R&D at Albany Nanotech, Albany, New York 12203), D. Restaino, S. Lane, S. Molis (IBM Semiconductor R&D Center, Hopwell Junction, New York 12533 USA), K. Malone (IBM Almaden Research Center, San Jose, CA 95120 USAI), E. Liniger (IBM), V. Patel, S. Gates, D. Edelstein (IBM Watson Research Center, Yorktown Heights, New York 10598 USA), S. Mehta (IBM Semiconductor R&D at Albany Nanotech, Albany, New York 12203) and T. Ivers (IBM Semiconductor R&D Center, Hopwell Junction, New York 12533 USA)