214th ECS Meeting - Honolulu, HI

October 12 - October 17, 2008

PROGRAM INFORMATION
 

F2 - Electronics Packaging 3

Electrodeposition
 

Tuesday, October 14, 2008

South Pacific 3; Mid-Pacific Conference Center, Hilton Hawaiian Village

F2-Electronics Packaging 3

Co-Chair(s): T.Ritzdorf and M.Hayase
TimeAbs#Title and Authors
08:00   2496   A Cu/resin Interconnect Technology for High Density System-in-Package S. Yamamichi (NEC Corporation)
08:40   2497   Low-k Compatible All-Copper Flip-Chip Connections T. Osborn, H. Lightsey and P. A. Kohl (Georgia Institute of Technology)
09:00   2498   All-Copper Connections: A Study of Electroless Additive Plating Chemistry T. Osborn, N. Galiba and P. A. Kohl (Georgia Institute of Technology)
09:20   2499   Electrophoretic Deposition of Tin-rich, Tin-gold Eutectic Solders for Micro/optoelectronic Applications C. S. Watt, D. Ivey and Q. Liu (University of Alberta)
09:40   2500   Modelling of Through-Mask Electrochemical Micromachining on Complex PCB Designs P. Raffelstetter, B. Mollay and G. Nauer (ECHEM Center of Competence in Applied Electrochemistry)
10:00 Intermission (20 Minutes)
10:20   2501   Suppression-Based Cu Electroplating Chemistry V. M. Dubin (eMAT Technology LLC)
10:40   2502   Accelerator and Suppressor Behavior during Copper Superfilling of Sub-100 nm Features Q. Huang, B. Baker-O'Neal, J. Kelly (IBM Corporation), P. Broekmann, A. Wirth, M. Martin, M. Hahn, A. Wagner and D. Mayer (BASF)
11:00   2503   Synergistic Additive-Additive Interactions in the Copper Electroplating Process P. Broekmann (BASF-SE), A. Wirth, M. Martin (BASF), T. Haag (BASF-SE), M. Hahn, A. Wagner, D. Mayer (BASF), Q. Huang (IBM Corporation), B. Baker-O`Neal, K. Kwietniak (IBM), J. Kelly (IBM Corporation) and J. Hedrick (IBM)
11:20   2504   PEG, PPG, and Their Triblock Copolymers as Suppressors in Copper Electroplating J. W. Gallaway (Columbia University), M. Willey (Novellus) and A. C. West (Columbia University)
11:40   2505   Characterization of Novel Polyether Suppressors for Improved Copper Interconnect Metallization J. Mendez, U. Landau (Case Western Reserve University) and R. Akolkar (Intel Corporation)
 
Co-Chair(s): K.Kondo, D.Barkey, and B.Wu
TimeAbs#Title and Authors
14:00   2506   Novel High Molecular Weight Levelers Extending Gap Fill to Smaller Features J. Adolf (Case Western Reserve University), R. Akolkar (Intel Corporation) and U. Landau (Case Western Reserve University)
14:20   2507   A Rotating Ring-Disk Study of Interactions among SPS, Cu(I) and Oxygen D. Barkey (University of New Hampshire)
14:40   2508   Seedless Electrodepositon of Copper on Ultra-Thin Barrier Layers N. Lay and D. J. Duquette (RPI)
15:00   2509   Electrochemical Study of Copper Deposition on Resistive Barrier Materials M. Amuntencei (ST Microelectronics), P. Haumesser (CEA-DRT-LETI - CEA/GRE - MINATEC), T. Pauporte and D. Lincot (Laboratioire d'Electrochimie et de Chimie Analytique UMR 7575 ENSCP CNRS Paris 6)
15:20   2510   Copper ECD Process of ULSI Circuits Controlled by Electroanalysis Combined with Multi-way Chemometrics. Transfer of the PARAFAC/ILS Calibration A. R. Jaworski, H. Wikiel and K. Wikiel (Technic, Inc.)
15:40 Intermission (20 Minutes)
16:00   2511   Modeling of Copper Via Filling Behavior by Rotating Disk Amperometry S. Ansar, Y. Chen, D. Barkey (University of New Hampshire), S. Christian and M. Toben (Rohm and Haas Electronic Materials)
16:20   2512   Simulation of Bottom-up Gap-Fill Accounting for Transient Additives Transport, Adsorption, and Interactions U. Landau (Case Western Reserve University), E. Malyshev and S. Chivilikhin (L-Chem, Inc.)
16:40   2513   Bottom-up Copper Deposition in Deep Holes by Selective Accelerator Removal M. Hayase and M. Nagao (Tokyo University of Science)
17:00   2514   Cu Filling Characteristics in Through-Si Via Holes by Electroless Plating with Addition of Inhibitors F. Inoue (Kansai University), M. Koyanagi, T. Fukushima (Tohoku University), K. Yamamoto, H. Tanaka (National Institute of Communication Technology), Z. Wang (Shaanxi Normal University) and S. Shingubara (Kansai University, Osaka, Japan)
17:20   2515   Through-Silicon Via Fill for 3D Interconnect Applications V. Mathew (Freescale Semiconductor,Inc.), R. Chatterjee (Georgia Institute of Technology), R. Jones, S. Garcia, E. Acosta and Z. Huang (Freescale Semiconductor)
 

Coral Exhibit Hall, Mid-Pacific Conference Center, Hilton Hawaiian Village

Co-Chair(s): K. Kondo, D.Barkey, and M. Hayase
TimeAbs#Title and Authors
o   2516   High Aspect Through-Hole Interconnection by Electrodeposition for vertical integrated MEMS Device S. Lee, M. Moriguchi, S. Sasaki and M. Oba (OMRON Corporation)
o   2517   A novel Microstructure Characterization Method of Electroplated Cu Films with FE-SEM H. Nakano, T. Kato (Materials Research Lab., Hitachi, Ltd.), H. Akahoshi (Hitachi Research Lab., Hitachi, Ltd.), T. Shono, I. Kanno and Y. Hirose (Process Technology Development Div., Renesas Corp.)
o   2518   Formation Factor of Nodule by Copper Electrodeposition S. Takahashi, N. Okamoto, T. Saito and K. Kondo (Osaka Prefecture University)
o   2519   Shape Evolution of Electrodeposited Bumps into Deep Cavity K. Kondo, Y. Suzuki, N. Okamoto and T. Saito (Osaka Prefecture University)
o   2520   Application of Pourbaix Diagrams to the Selective Etching of Thin Metal Layers J. Leibovitz (retired)
o   2521   Maskless Fabrication for Micropad Interconnection using Electroless NiB Deposition and Application to "Chemical" Flip-Chip Bonding T. Yokoshima, Y. Yamaji, N. Igawa, K. Kikuchi, H. Nakagawa and M. Aoyagi (National Institute of Advanced Industrial Science and Technology (AIST))
o   2522   Adsorption Enhancement of Pd and Ag Colloidal Catalysts for Electroless Cu Deposition Using Cationic Polylectrolytes Y. Kobayashi (Osaka Municipal Technical Research Institute), H. Takahashi, H. Kouta (NEC Corporation) and Y. Fujiwara (Osaka Municipal Technical Research Institute)
o   2523   Electroless Deposition on the Insulators by Using Pd im-Mobilized Layer of Organic Molecules M. Yoshino, H. Aramaki, I. Matsuda (Waseda university), T. Osaka (Faculty of Science and Engineering, Waseda University), K. Ueno (Shibaura Institute of Technology) and Y. Shacham-Diamand (Tel Aviv University)
o   2524   Change in the Film Properties According to the Various Electroplating Conditions M. Kim, S. Cho and J. Kim (School of Chemical and Biological Engineering)
o   2525   Optimization of Pd activation on Ta substrate for Cu electroless deposition using electrochemical method T. Lim, H. Koo (Seoul National University) and J. Kim (School of Chemical and Biological Engineering)
o   2526   Nano-scopic Evaluation of Metals Diffused into the Surface Layer S. Yamamoto (Kobe City College of Technology) and H. Yamada (Kyoto University)
o   2527   Electroplated Sn Micro-Bumps for Millimeter-Wave Flip-Chip Packaging C. Wang, L. Hsu, W. Wu, E. Chang and O. Way (National Chiao Tung University)