Honolulu PRiME 2012 - Honolulu, Hawaii

October 7 - October 12, 2012

PROGRAM INFORMATION

 

E10 - More than Moore

 

Monday, October 8, 2012

319A, Level 3, Hawaii Convention Center

Roadmaps

Co-Chairs:
TimeProgr#Title and Authors
08:00   2782   More Moore or More than Moore C. Hobbs, K. Ang, R. Hill, C. Kang, W. Loh, K. Hummler, S. Arkalgud, P. Kirsch, and R. Jammy (SEMATECH)
08:40   2783   Technology Roadmapping of ICs "More than Moore" Functional Diversification B. Bader (iNEMI) and M. Gaitan (National Institute of Standards and Technology (NIST))
09:20   2784   Emerging Research Devices and Architectures for More-Than-Moore Applications A. Chen (GLOBALFOUNDRIES)
 

Bioelectronics

TimeProgr#Title and Authors
10:00 Intermission (15 Minutes)
10:15   2785   Engineering the Bio-Abio Interface to Enable Next Gen Bionics A. Guiseppi-Elie, C. Kotanen, O. Karunwei, and A. Wilson (Clemson University)
10:50   2786   Enabling Long-Term Dielectrophoretic Actuation for Cell Manipulation and Analysis in Microfluidic Biochips D. R. Reyes (National Institute of Standards and Technology)
11:25   2787   Microsystem Pathways to a Greener World Using Radioisotopes A. Lal (Cornell University)
 

3D Systems

TimeProgr#Title and Authors
13:05   2788  
CANCELLED
Superconducting Fault Current Limiter with Fast Nanosecond Switching Time for Communication System Application T. Chiu, C. Shih (CSIST), C. Cheng, C. Cheng (Chung-Shan Institute of Science & Technology), T. Huang (CSIST), and T. Chang (Chung-Shan Institute of Science & Technology)
13:40   2789   High-Speed Alkaline Etching for Backside Exposure of through Silicon Vias K. Yoshikawa (Tohoku University), T. Miyazaki (PRE-TECH AT CO., LTD), N. Watanabe, and M. Aoyagi (National Institute of Advanced Industrial Science and Technology)
14:15   2790   Development of Novel MOSFET with Front and Back Side Electrodes for 3D-Structured Image Sensors M. Goto, K. Hagiwara, Y. Iguchi, H. Ohtake (NHK Science and Technology Research Laboratories), T. Saraya, H. Toshiyoshi, and T. Hiramoto (The University of Tokyo)
 

3D Metrology

TimeProgr#Title and Authors
14:50   2791   Metrology to Enable "More than Moore" Applications of Resistive Switching Devices C. A. Richter, J. Tedesco (NIST), H. Jang (NIST & Wake Forest University), H. Li (NIST & George Mason University), O. Jurchescu (Wake Forest University), and Q. Li (George Mason University)
15:25   2792   Measurement Science for "More-Than-Moore" Technology Reliability Assessments Y. Obeng (National Institute of Standards and Technology), C. Okoro, and J. Kopanski (National Institute of Standards and Technology (NIST))
 

Tuesday, October 9, 2012

319A, Level 3, Hawaii Convention Center

3D Systems Part 2

Co-Chairs:
TimeProgr#Title and Authors
08:30   2793   Multi-physics Equivalent Circuit Models for MEMS Sensors and Actuators T. Konishi, K. Machida (NTT Advanced Technology Corp.), K. Masu (Tokyo Institute of Technology), and H. Toshiyoshi (The University of Tokyo)
09:05   2794   ThruChip Interface for Heterogeneous Chip Stacking T. Kuroda (Keio University)
09:40 Intermission (20 Minutes)
 

Novel Devices and Processing Part 1

TimeProgr#Title and Authors
10:00   2795   Energy-efficient Novolatile Logic systems based on CMOS/spintronics Hybrid technology S. Sugahara, Y. Shuto, and S. Yamamoto (Tokyo Institute of Technology)
10:35   2796   Programmable Cell Array using Rewritable Atom Switch M. Miyamura, T. Sakamoto (Low-power Electronics Association & Project), M. Tada (LEAP), N. Banno, K. Okamoto, N. Iguchi, and H. Hada (Low-power Electronics Association & Project)
11:10   2797   Wafer Processing Photoresist Stripping Requirements C. L. Arvin (IBM) and G. Banerjee (Air Products and Chemicals)
 

Novel Materials and Processing - Graphene

TimeProgr#Title and Authors
14:00   2798   Graphene for Nanoelectronic Device Applications L. Colombo (Texas Instruments Incorporated)
14:35   2799   Improving Ion/Ioff in Bilayer Graphene Transistors by Molecular Functionalization M. Cantoro, A. Nourbakhsh, A. Klekachev, I. Asselberghs, C. Huyghebaert, M. Heyns, and S. De Gendt (imec)
15:10 Intermission (20 Minutes)
 

Novel Materials and Processing Part 2

TimeProgr#Title and Authors
15:30   2800   Integration with Diverse Functionalities on Standard CMOS K. Masu (Tokyo Institute of Technology)
16:05   2801   Heterogeneous Integration of Alternative Materials and Devices on Silicon CMOS Integrated Circuits T. S. Mayer (The Pennsylvania State University)
16:40   2802   New Technology Trends: Expand and Extend R. Rhoades (Entrepix, Inc.)
17:15 Concluding Remarks (15 Minutes)