Honolulu PRiME 2012 - Honolulu, Hawaii

October 7 - October 12, 2012

PROGRAM INFORMATION

 

E11 - Nonvolatile Memories

 

Wednesday, October 10, 2012

313C, Level 3, Hawaii Convention Center

ReRAM-Bipolar Devices

Co-Chairs: S.Shingubara, H.Akinaga
TimeProgr#Title and Authors
08:00   2803  
CANCELLED
Scalable Non-volatile Memory and Switch Device for High-Density Bipolar ReRAM Applications D. Lee, M. Lee, and U. Chung (Samsung Advanced Institute of Technology)
08:40   2804   A Two Terminal Vertical Selector Device for Bipolar RRAM S. Chopra (Applied Materials), P. Bafna, P. Karkare, S. Srinivasan, S. Lashkare, P. Kumbhare (IIT Bombay), Y. Kim, S. Srinivasan, S. Kuppurao (Applied Materials), S. Lodha, and U. Ganguly (IIT Bombay)
09:00   2805   Forming-less Interfacial Resistive Switching Mechanism of Ultra-Thin HfO2 Films J. Kim, I. Mok, K. Lee, Y. Kim, and H. Sohn (Yonsei University)
09:20   2806   Hf Cap Thickness Dependence in Bipolar-Switching TiN\HfO2\Hf\TiN RRAM Device Y. Chen, G. Pourtois, S. Clima, B. Govoreanu, L. Goux, A. Fantini, R. Degreave, G. Groeseneken, D. Wouters, and M. Jurczak (imec)
 

PCRAM and FeRAM

Co-Chairs: N.Takaura,H.Akinaga
TimeProgr#Title and Authors
10:00   2807   Material Engineering of GexSbyTez and GaxSby Phase Change Materials for High Performance Phase Change Memory H. Cheng (Macronix International Co., Ltd.), S. Raoux (IBM T. J. Watson Research Center), T. Hsu, C. Wu (Macronix International Co., Ltd.), M. BrightSky (IBM T. J. Watson Research Center), H. Lung (Macronix International Co., Ltd.), and C. Lam (IBM T. J. Watson Research Center)
10:30   2808   Advances in ALD GST Process and Equipment for sub-20nm PCRAM Devices : Precursor delivery, GST Gapfill and Electrical Characterization Z. Karim (AIXTRON Inc), L. Yang (AIXTRON SE), J. Mack, M. Liu (AIXTRON Inc), U. Weber, P. Baumann (AIXTRON SE), S. Ramanathan, B. Lu (AIXTRON Inc), W. Czubatyj, S. Hudgens, and T. Lowrey (Ovonyx Inc)
11:00   2809  
CANCELLED
Characterisation of GeTe Phase Change Material Deposited by Plasma Assisted MOCVD L. Dussault (CNRS), C. Vallée, M. Aoukar (LTM/CNRS), D. Jourde, and P. Michallon (CEA/LETI)
11:20   2810   Supercritical Fluid Deposition of Bismuth Titanate for Embedded FeRAM Applications Y. Zhao, K. Jung, T. Momose, and Y. Shimogaki (The University of Tokyo)
11:40   2811   Deposition Mechanism of Metal Oxide for FeRAM Electrode using Flow Type Supercritical Fluid Deposition Reactor K. JUNG (The univ. Tokyo), T. Momose, and Y. Shimogaki (The University of Tokyo)
 

STT-MRAM and Other Memories

Co-Chairs: Y.Suzuki, N.Takaura
TimeProgr#Title and Authors
14:00   2812   Progresses on High Density MRAMs with perpendicular MTJs and Challenges to Realize Normally-Off systems H. Yoda (Toshiba Electronics Korea Corporation)
14:30   2813   Racetrack Memory 2.0 S. Parkin (IBM Almaden Research Center)
15:00   2814   STT-MRAM Development and Its Integration with BEOL Process for Embedded Applications T. Sugii, Y. Iba, M. Aoki, H. Noshiro, K. Tsunoda, A. Hatada, M. Nakabayashi, Y. Yamazaki, A. Takahashi, and C. Yoshida (LEAP)
15:20   2815   Ohmic and Non-Ohmic ON States in Pt/Ta2O5/Cu Memristive Switches P. R. Shrestha (National Institute of Standards and Technology), A. Ochia (National Institute of Satndards and Technology), K. Cheung, J. Campbell (National Institute of Standards and Technology), H. Baumgart (Old Dominion University), and G. Harris (Howard University)
15:40   2816  
CANCELLED
Resistive Switching Characteristics of N-doped ZnO Films Using Atomic Layer Depsition T. Huang (Photonics and Optoelectronics), W. Chang (National Taiwan University), J. Chien (Materials Science and Engineering), C. Kang, P. Yang (National Taiwan University), M. Chen (Materials Science and Engineering), and J. He (National Taiwan University)
 

Flash Memories

Co-Chairs: K.Kobayashi, Z.Karim
TimeProgr#Title and Authors
16:20   2817  
CANCELLED
Current Status of NAND Memories and its Future Prospect with 3D NAND Technology T. Endoh (Tohoku University)
16:50   2818   Analysis of the Scaling Effect on NAND FLASH Memory Cell Operation R. Shirota and H. Watanabe (National Chao Tung University)
17:20   2819   The Development of the Novel High Speed Erase Scheme for 3D Stacked NAND Flash Memory W. Lin (National Chiao Tung University), R. Shirota (National Chao Tung University), T. Kuo, N. Mitiukhina, F. Li, and C. Chang (National Chiao Tung University)
17:40   2820   Temperature Effects on Performance of nc-MoOx Embedded ZrHfO High-k Nonvolatile Memories C. Lin and Y. Kuo (Texas A&M University)
 

Kamehameha Exhibit Hall 3, Level 1, Hawaii Convention Center

E11 - Poster Session - Nonvolatile Memoreis

Co-Chairs: S.Shingubara,Y.Suzuki
TimeProgr#Title and Authors
o   2821   Characteristics of Nano-Crystalline Ge2Sb2Te5 Material for Phase Change Memory T. Ohyanagi and N. Takaura (Low-power Electronics Association & Project)
o   2822   Oxygen Ion based Resistive Switching in Ta2O5-x/TiO2-x Bi-Layer Frameworks for the Nonvolatile Memory Applications J. Hong, Y. Bae, and A. Lee (Hanyang University)
o   2823   Effect of Post-Annealing on the Resistance Switching Characteristic of Oxygen Modulated HfOx Films K. Lee, J. Kim, S. Park, and H. Sohn (Yonsei University)
o   2824   Perpendicular Magnetic Dipolar Interaction of Co/Pt Nanodot Arrays on Carbon Nanopost Stamps S. Yoon (Gwangju Institute of Science and Technology), S. Lee (Gwagnju Institute of Science and Technology), and B. Cho (Gwagnju Institite of Science and Technology)
o   2825  
CANCELLED
Low-Temperature Annealed Sol-Gel Derived SONOS-Type Flash Memory C. Wu and Y. Yu (Graduate Institute of Biomedical Materials and Tissue Engineering)
o   2826   Large Resistive Switching Phenomenon Induced by Magnetic Field in Nano Conduction Path T. Kato, T. Shimizu, S. Otuka, T. Kyomi, and S. Shingubara (Kansai University)
o   2827   Electrical Properties of Sol-Gel Derived PbLaZrTiOx Capacitors with Nonnoble Metal Oxide Top Electrodes Y. Takada, T. Tsuji, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura (Osaka Prefecture University), K. Higuchi, A. Kitajima, and A. Oshima (Osaka University)
o   2828   Converse Magnetoelectric effect in a Room Temperature Multiferroic Pb(Zr0.53 Ti0.47)1-x(Fe0.5Ta0.5)xO3 Ceramic System D. A. Sanchez, R. Martinez, A. Kumar, N. Ortega (University of Puerto Rico), G. Srinivasan (Oakland University), R. Katiyar, and J. Scott (University of Puerto Rico)
o   2829   Electric Conduction Mechanism of Resistive Switching Memory using Anodic Porous Alumina S. Otsuka, T. Shimizu, S. Shingubara (Kansai University), N. Iwata, T. Watanabe, Y. Takano, and K. Takase (Nihon University)
o   2830   Pulse Switching Property of Reset Process in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides T. Moriyama, K. Kinoshita, R. Koishi, and S. Kishida (Tottori University)
o   2831   Physical Properties Elucidation of Filaments in HfO2-Conducting-Bridge Random Access Memory S. Haswgawa, K. Kinoshita, S. Turuta, T. Fukuhara, and S. Kishida (Tottori University)
o   2832   Switching Phenomena in Iron-Oxide Thin Films Deposited through Chemical Vapor Deposition S. Lee, Y. You, H. Yang, J. Hwang (Hongik University), T. Chung, C. Kim (Korea Research Institute of Chemical Technology), S. Lee (Korea Research Institute of Chemistry Technology), and K. An (Korea Research Institute of Chemical Technology)
o   2833   Physical Picture of Filaments in Reset Process of Resistive Random Access Memory Consisting of Pt/NiO/Pt Structure M. Yoshihara, K. Kinoshita, R. Ogata, and S. Kishida (Tottori University)
 

Thursday, October 11, 2012

313C, Level 3, Hawaii Convention Center

ReRAM-technology Challenges

Co-Chairs: H.Akinaga, K.Kobayashi
TimeProgr#Title and Authors
08:00   2834   Recent Progress in Modeling the Operation of Resistive Switching Memory Devices Y. Nishi and B. Magyari-Kope (Stanford University)
08:40   2835   ReRAM SrTiO3-La0.7Sr0.3O3 Multilayer Oxide Structures: Playing with Space Charge Interfaces J. L. Rupp, B. Yildiz, and H. L. Tuller (Massachusetts Institute of Technology)
09:00   2836   Nonvolatile Resistance Switching in Electrodeposited Co3O4 J. A. Koza, Z. He, M. Willmering, and J. Switzer (Missouri University of Science and Technology)
09:20   2837   Fully Transparent Non-Volatile Memory Using Multi-Layer Graphene Electrode P. Yang (National Taiwan University), S. Jen (National Tsing Hua University), W. Chang (National Taiwan University), P. Chiu (National Tsing Hua University), and J. He (National Taiwan University)
 

Emerging Nonvolatile Memories-1

Co-Chairs: Z.Karim,Y.Suzuki
TimeProgr#Title and Authors
10:00   2838   Atom Movement Controlled Devices: Atomic Switches and Atom Transistor T. Hasegawa and M. Aono (National Institute for Materials Science)
10:30   2839   Molecular Flash Memories S. Paydavosi (MIT), K. Aidala (Mount Holyoke College), P. Brown, P. Hashemi, T. Osedach, J. Hoyt, and V. Bulovic (MIT)
11:00   2840   Self-rectifying Flexible Nonvolatile Small-molecule Memory-cell Embedded with Ni Nanocrystals Surrounded by NiO Tunneling Barrier H. Seung, J. Lee, J. Lee, M. Song, J. Hong, and J. Park (Hanyang University)
11:20   2841   Flexible Polymer Memory-cell with Au Nanocrystals Embedded in Polystyrene K. Kwon, H. Seung, D. Yang, D. Park, J. Hong, and J. Park (Hanyang University)
11:40   2842   Effect of Buffer LiF Layer on Nonvolatile Memory Characteristics for Polymer Memory-cell with Au Nanocrystals Embedded in Polystyrene J. Lee, K. Kwon, D. Yang, D. Park, J. Hong, and J. Park (Hanyang University)
 

ReRAM-unipolar Devices and Characterizations

Co-Chairs: N.Takaura, Z.Karim
TimeProgr#Title and Authors
14:00   2843   Crossbar Memory Using TiO2 Thin Film-based Schottky Diode and Unipolar Switching Cell G. Kim, J. Lee, J. Han, S. Song, J. Seok, J. Yoon, K. Yoon, and C. Hwang (Seoul National University)
14:30   2844   Direct Observation of Redox Reactions during Resistance Switching by using Synchrotron Radiation Spectroscopy H. KUMIGASHIRA (Institute of Materials Structure Science, KEK)
15:00   2845   Direct Observation of Conducting Nanofilaments in BMO Resistive Switching Memory C. Kang (National Taiwan University), W. Kuo, C. Huang (National Chiao Tung University), W. Chang (National Taiwan University), W. Wu, Y. Chu (National Chiao Tung University), and J. He (National Taiwan University)
15:20   2846   Conditions for Formation and Rupture of Multiple Conductive Filaments in a Cu/TaOx/Pt Device Y. Kang, M. Verma, T. Liu, and M. Orlowski (Virginia Tech)
15:40   2847   De-Process and Physical Characterization of HfO2 based Resistive Memory as Studied by C-AFM U. Celano, Y. Chen, D. Wouters, M. Jurczak, and W. Vandervorst (imec)
 

Emerging Nonvolatile Memories -2

Co-Chairs: S.Shingubara, K.Kobayashi
TimeProgr#Title and Authors
16:20   2848   Fabrication of a Vertical Nanogap for Nonvolatile Memories S. Furuta, Y. Masuda, T. Takahashi, M. Ono (Funai Electric Advanced Applied Technology Research Institute Inc.), Y. Naitoh (National Institute of Advanced Industrial Science and Technlogy), and T. Shimizu (National Institute of Advanced Industrial Science and Technology)
16:40   2849   Physical Model of Nonvolatile Resistance Switching Using Simple Nanogap Electrode Y. Naitoh, M. Horikawa, H. Suga (National Institute of Advanced Industrial Science and Technlogy), T. Shimizu (National Institute of Advanced Industrial Science and Technology), S. Furuta, Y. Masuda (Funai Electric Advanced Applied Technology Research Institute Inc.), T. Sumiya (Funai Electric Advanced Applied Technology Research Institute), T. Takahashi, and M. Ono (Funai Electric Advanced Applied Technology Research Institute Inc.)
17:00   2850   Impact of Air on Photo-Assisted Atomic Switch T. Hino, T. Hasegawa (National Institute for Materials Science), H. Tanaka (Osaka University), T. Tsuruoka, Y. Okawa (National Institute for Materials Science), T. Ogawa (Osaka University), and M. Aono (National Institute for Materials Science)
17:20   2851   Engineering Dielectric Stacks for Charge-Trapping Non-Volatile Memory H. Zhu, Q. Li (George Mason University), H. Li (NIST & George Mason University), H. Yuan, D. Ioannou (George Mason University), and C. A. Richter (NIST)
17:40   2852   Ferroelectric Nonvolatile Nanowire Memory Circuit using Single ZnO Nanowire and Ferroelectric Polymer Top Layer Y. Lee (Yonsei University), P. Jeon (Institute of Physics and Applied Physics), K. Lee, R. Ha, H. Choi, and S. Im (Yonsei University)