Honolulu PRiME 2012 - Honolulu, Hawaii

October 7 - October 12, 2012

PROGRAM INFORMATION
 

E14 - Semiconductor Wafer Bonding 12: Science, Technology, and Applications
 

Monday, October 8, 2012

312, Level 3, Hawaii Convention Center

Fundamentals

Co-Chairs:
TimeProgr#Title and Authors
08:00   2952   Direct Bonding Energy Measurement Under Anhydrous Atmosphere F. Fournel, L. Contini, C. Morales, J. Da Fonseca, H. Moriceau, C. Martin Cocher (CEA, LETI), F. Rieutord (CEA, INAC), A. Barthelemy, and I. Radu (SOITEC)
08:40   2953   Study of Hydrophilic Si Direct Bonding with Ultraviolet Ozone Activation for 3D Integration J. Fan, G. Chong, and C. Tan (Nanyang Technological University)
09:00   2954   Hydrophilic Wafer Bonding - An Acid/Base Concept M. Reiche (Max-Planck-Institut für Mikrostrukturphysik)
09:20   2955   Surface Activiation for Semiconductor Wafer Direct Bonding Using Polymer-Stripping Wet Chemicals R. Knechtel, H. Wünschre, and H. Klingner (X-FAB Semiconductor Foundries AG)
 

Bonded Interface Properties

TimeProgr#Title and Authors
10:00   2956   In-situ Observation of Formation of Bonded Interface using MEMS-in-TEM at the Nanoscale T. Ishida (Insutitute of Industrial Science, University of Tokyo)
10:40   2957   Structure of Directly Bonded Interfaces Between Si and SiC M. Yoshimoto, R. Araki, T. Kurumi, and H. Kinoshita (Kyoto Institute of Technology)
11:00   2958   Influence of Interfacial Particles on Unbonded Area in Semiconductor Wafer Bonding: an Experimental Approach H. Kim-Lee, A. Kim, D. Kim, J. Jeon, K. Woo, and B. Park (Samsung Corning Precision Materials)
11:20   2959   Strain Characterization of Directly Bonded Germanium-to-Silicon Substrates I. P. Ferain (Tyndall National Institute-UCC), N. Bennett, P. McNally (Dublin City University), S. Holl (California State University, Sacramento), and C. Colinge (Tyndall National Institute-UCC)
11:40   2960   The Study on Defects of Germanium-on-Insulator Fabricated by a Low Temperature Smart-Cut Process X. Zhang, F. Yang, Y. Ou (Institute of Miccroelectronics of Chinese Academy of Sciences), T. Ye (Chinese Academy of Sciences), and S. Zhuang (University of Shanghai for Science and Technology)
 

Wafer Bonding for Solar Cells

TimeProgr#Title and Authors
14:00   2961   Advanced III-V Multijunction Solar Cells Fabricated by Semiconductor Wafer Bonding D. C. Law, D. Bhusari, S. Mesropian, S. Singer, P. Chiu, W. Hong, R. Woo, X. Liu, C. Fetzer, A. Palmer, E. Rehder, R. King, J. Boisvert, and N. Karam (Spectrolab, Boeing)
14:40   2962   Development of GaInP/GaAs/Si Solar Cells using Surface Activated Wafer Bonding S. Essig, K. Derendorf, E. Oliva, A. Wekkeli, J. Benick, M. Hermele, G. Siefer, A. Bett, and F. Dimroth (Fraunhofer Institute for Solar Energy Systems ISE)
15:20   2963   Electrical Conductivity of Direct Wafer-Bonded GaAs/GaAs Structures for Wafer-Bonded Tandem Solar Cells K. Yeung, J. Mc Kay, C. Roberts (University of California - Los Angeles), and M. Goorsky (University of California, Los Angeles)
 

Tuesday, October 9, 2012

312, Level 3, Hawaii Convention Center

Metal and 3D Integration

Co-Chairs:
TimeProgr#Title and Authors
08:00   2964   Cu Surface Passivation with Self-Assembled Monolayer (SAM) and Its Application for Wafer Bonding at Moderately Low Temperature C. Tan (Nanyang Technological University) and D. Lim (NTU)
08:40   2965   Evaluation of Titanium Direct Bonding Mechanisms F. Baudin, L. Di Cioccio, P. Gergaud, N. Chevalier, V. Delaye, D. Mariolle, J. Fabbri, B. Imbert (CEA, LETI, Minatec Campus), and Y. Bréchet (SIMaP)
09:00   2966   A New Combined Process of Formic Acid Pretreatment for Low-temperature Bonding of Copper Electrodes W. Yang, M. Akaike, M. Fujino (The University of Tokyo), and T. Suga (University of Tokyo)
09:20   2967   Low-Temperature Cu-Cu Wafer Bonding B. Rebhan (EV Group), G. Hesser (Center of Surface- and Nanoanalytics, Johannes Kepler University), J. Duchoslav (Center of Surface- and Nanoanalytics, Johannes Kepler University; and Christian Doppler Laboratory for Microscopic and Spectroscopic Material Characterization), V. Dragoi (EV Group E. Thallner GmbH), M. Wimplinger (EV Group), and K. Hingerl (Center of Surface- and Nanoanalytics, Johannes Kepler University)
 

Materials and Device Integration

TimeProgr#Title and Authors
10:20   2968   Advanced Heterogeneous Integration of InP HBT and CMOS/SiGeBiCMOS Technologies A. Gutierrez-Aitken, P. Chang-Chien, B. Oyama, D. Scott, K. Hennig, E. Kaneshiro, P. Nam, K. Thai, B. Poust, A. K. Oki, and R. Kagiwada (Northrop Grumman Aerospace Systems)
11:00   2969   Wafer Level 3D Stacking using Smart CutTM and Metal-Metal Direct Bonding Technology L. Di Cioccio, F. Mazen (CEA,LETI,Minatec), F. Baudin (CEA, LETI, Minatec Campus), A. Mounier, T. Lacave (CEA,LETI,Minatec), V. Delaye (CEA, LETI, Minatec Campus), B. Imbert (Cea.leti.Minatec), N. Chevalier (CEA, LETI, Minatec Campus), M. Denis (CEA,LETI,Minatec), G. Gaudin, I. Radu, S. Thieffry, and T. Signamarcheix (SOITEC)
11:20   2970   Cu-Sn Transient Liquid Phase Wafer Bonding: Process Parameters Influence on Bonded Interface Quality C. Floetgen, K. Corn, M. Pawlak, and V. Dragoi (EV Group E. Thallner GmbH)
11:40   2971   Laser Transmission Bonding of Silicon with Titanium and Copper Layer for Wafer-Level Packaging A. Wissinger (Aachen University), M. Schmitz, A. Olowinsky, A. Gillner (Fraunhofer Institute for Laser Technology ILT), and R. Poprawe (Aachen University)
 

Mechanics of Wafer Bonding

TimeProgr#Title and Authors
14:00   2972   Mechanics of Wafer Bonding and Layer Transfer Processes K. T. Turner (University of Pennsylvania)
14:40   2973   A Study of Factors Influencing Micro-Chevron-Testing of Glass Frit Bonded Interfaces F. Naumann (Fraunhofer Institute for Mechanics of Materials), S. Brand (Fraunhofer Institute for Mechanics of Materials IWM), D. Wünsch (Fraunhofer Institute for Electronic Nano Systems), P. Czurratis (PVA Tepla Analytical Systems GmbH), and M. Petzold (Fraunhofer Institute for Mechanics of Materials IWM)
15:00   2974   Failure Mechanisms and Mechanical Characterization of Reactive Bonded Interfaces B. Boettge (Fraunhofer Institute for Mechanics of Materials IWM), F. Naumann (Fraunhofer Institute for Mechanics of Materials), F. Schippel, and M. Petzold (Fraunhofer Institute for Mechanics of Materials IWM)
15:20   2975   Low Temperature Fusion Wafer Bonding Quality Investigation for Failure Mode Analysis V. Dragoi (EV Group E. Thallner GmbH), P. Czurratis (PVA Tepla Analytical Systems GmbH), S. Brand, A. Graff, C. Patzig, and M. Petzold (Fraunhofer Institute for Mechanics of Materials IWM)
15:40   2976   Using of Different Nano Scale Energetic Material Systems for Reactive Bonding J. Braeuer, J. Besser, M. Wiemer, and T. Gessner (Fraunhofer ENAS)
 

Kamehameha Exhibit Hall 3, Level 1, Hawaii Convention Center

E14 - Poster Session

TimeProgr#Title and Authors
o   2977   Integrating Laser Diode and Optical Isolator by Photosensitive Adhesive Bonding H. Yokoi, N. Ichishima, and I. Myouenzono (Shibaura Institute of Technology)
o   2978   Room Temperature Wafer Bonding by Surface Activated ALD- Al2O3 Y. Li (Interuniversity Microelectronics Centre of china), S. Wang (Institute of Microelectronics, Chinese Academy of Sciences), B. Sun, H. Chang, W. Zhao (Chinese Academy of Sciences), X. Zhang (Southeast University), and H. Liu (Chinese Academy of Sciences)
o   2979   Interface Morphology and Electrical Properties of Bonded GaAs/GaAs Wafers at Different Temperatures S. Chang and Y. Wu (National Chiao Tung University)
o   2980  
CANCELLED
Multi-Wavelength High Resolution Micro-Raman and Optical Reflectance Characterization of Nano-Scale Strained Silicon-on-Insulator Substrates T. Kim, T. Shim (Hanyang University), W. Yoo (WaferMasters, Inc.), and J. Park (Hanyang University)
o   2981   Advanced Process Control in Megasonic- Enhanced Pre-Bonding Cleaning D. Dussault (ProSys Inc.), F. Fournel (CEA, LETI), and V. Dragoi (EV Group E. Thallner GmbH)
o   2982   Glass Direct Bonding G. Kalkowski, C. Rothhardt, R. Eberhardt, P. Jobst, and M. Schürmann (Fraunhofer IOF)
o   2983   Quality Control of Bond Strength in Low-Temperature Bonded Wafers J. Siegert, C. Cassidy, F. Schrank (austriamicrosystems AG), R. Gerbach (Fraunhofer Institute for Mechanics of Materials IWM), F. Naumann (Fraunhofer Institute for Mechanics of Materials), and M. Petzold (Fraunhofer Institute for Mechanics of Materials IWM)
o   2984   Micro-Structural Analysis of AlN Wafer Bonding and Hydrogen Ion-Induced Splitting for Film Exfoliation M. Mamun, K. Tapliy (Old Dominion University), O. Moutanabbir (Universite de Montreal, Canada), D. Gu, H. Baumgart, and A. Elmustafa (Old Dominion University)
o   2985   The Effects of Composition and Design of Experiment on the Quality of Al-Ge Eutectic Bonding for Wafer Level Packaging X. Huang, C. Cheng, P. Liu, Y. Hsieh, L. Chao, C. Tsai, D. Huang (Taiwan Semiconductor Manufacturing Company, Ltd.), and C. Colinge (Waferbond)
o   2986   High Resolution Double-Crystal X-ray Diffraction Imaging for Interfacial Defect Detection in Bonded Wafers. S. Sharma (UCLA) and M. Goorsky (University of California, Los Angeles)
o   2987   Optimization of H+ Implantation Parameters for Exfoliation of 4H-SiC Films V. Amarasinghe, L. Wielunski (Rutgers University), A. Barcz (Institute of Electron Technology), L. Feldman, and G. K. Celler (Rutgers University)
 

Wednesday, October 10, 2012

312, Level 3, Hawaii Convention Center

Plasma Activation

Co-Chairs:
TimeProgr#Title and Authors
08:00   2988   Plasma Activation as a Pretreatment Tool for Low-Temperature Direct Wafer Bonding Materials in Microsystems Technology M. Eichler, P. Hennecke, K. Nagel (Fraunhofer Institute for Surface Engineering and Thin Films IST), M. Gabriel (SUSS MicroTec Lithography GmbH), and C. Klages (Fraunhofer Institute for Surface Engineering and Thin Films IST)
08:40   2989   Mechanisms for Ultra-Low Temperature Plasma Activated Direct Wafer Bonding T. Plach (Johannes Kepler University), K. Hingerl (Center of Surface- and Nanoanalytics, Johannes Kepler University), V. Dragoi (EV Group E. Thallner GmbH), and M. Wimplinger (EV Group)
09:00   2990   Treatments of Deposited SiO2 Surfaces Enabling Low Temperature Direct Bonding C. Rauer (CEA-LETI), H. Moriceau, F. Fournel (CEA, LETI), A. Charvet (CEA-LETI), C. Morales (CEA, LETI), N. Rochat, L. Vandroux (CEA-LETI), F. Rieutord (CEA, INAC), T. McCormick, and I. Radu (SOITEC)
09:20   2991   Room Temperature Bonding of Polymer to Glass Wafers using Surface Activated Bonding (SAB) Method T. Matsumae (University of Tokyo), M. Nakano, Y. Matsumoto (Lantechnical Service Co., Ltd., Takasaki-shi, Gunma 370-3523, Japan), R. Kondo (School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan), and T. Suga (University of Tokyo)
 

Layer Transfer Technologies

TimeProgr#Title and Authors
10:20   2992   Cost-effective layer transfer by Controlled Spalling Technology S. W. Bedell (IBM T.J. Watson Research Center), D. Shahrjerdi (IBM T J Watson Research Center), K. Fogel, P. Lauro, B. Hekmatshoar, N. Li (IBM T.J. Watson Research Center), J. Ott (IIBM T.J. Watson Research Center), and D. Sadana (IBM T.J. Watson Research Center)
11:00   2993   Development of Porous InP for Subsequent Epitaxial Layer Transfer onto Flexible Substrates X. Kou and M. Goorsky (University of California, Los Angeles)
11:20   2994   Effect of Two-step Oxidation in Ge Condensation on Surface Roughness Property of Relaxed SiGe layer-on-insulator Substrates T. Shim, T. Kim, D. LEE (Hanyang University), R. Okuyama (SUMCO Corporation), and J. Park (Hanyang University)
11:40   2995   Advanced Characterization of a Direct Wafer Bonding-compatible Germanium Exfoliation Process I. P. Ferain (Tyndall National Institute-UCC), X. Kou, C. Moulet-Ventosa, M. Goorsky (University of California, Los Angeles), and C. Colinge (Tyndall National Institute-UCC)
 

Bonding for Photonics

TimeProgr#Title and Authors
14:00   2996   Low-Temperature Bonding Technologies for Photonics Applications E. Higurashi (The University)
14:40   2997   Adhesive Wafer Bonding Applied for Fabrication of True-Chip-Size Packages for SAW Devices T. Heuser, C. Bauer (EPCOS AG), V. Dragoi (EV Group E. Thallner GmbH), and G. Mittendorfer (EV Group)
15:00   2998   Distortion Free Wafer Bonding Technology for Backside Illumination Image Sensors M. Broekaart, A. Castex, K. Landry, R. Fontaniere, and C. Lagahe-Blanchard (Soitec)
15:20   2999   Monitoring Inner Pressure of MEMS Devices Sealed by Wafer Bonding R. Knechtel, S. Hering, and S. Dempwolf (X-FAB Semiconductor Foundries AG)
15:40   3000   Chemical-Mechanical Polishing YAG For Wafer Bonding J. Mc Kay (University of California - Los Angeles), C. Moulet-Ventosa, and M. Goorsky (University of California, Los Angeles)