Honolulu PRiME 2012 - Honolulu, Hawaii

October 7 - October 12, 2012

PROGRAM INFORMATION
 

E15 - State-of-the-Art Program on Compound Semiconductors 54 (SOTAPOCS 54)
 

Monday, October 8, 2012

328, Level 3, Hawaii Convention Center

Advances in Wide Bandgap Semiconductors

Co-Chairs:
TimeProgr#Title and Authors
08:00   3001   Progress in Nonpolar and Semipolar GaN Materials and Devices J. S. Speck (University of California Santa Barbara)
08:30   3002   Study of Protein-Peptide Binding Affinity Using AlGaN/GaN High Electron Mobility Transistors C. Huang (National Tsing Hua University), G. Lee, J. Chyi (National Central University), H. Cheng (National Taiwan University Hospital), C. Hsu, Y. Hsu (National Tsing Hua University), F. Ren (University of Florida), and Y. Wang (National Tsing Hua University)
09:00   3003  
CANCELLED
Science Challenges of Ultra-Efficient Solid-State Lighting M. H. Crawford and J. Tsao (Sandia National Laboratories)
09:30   3004   InGaN/GaN Nanostructure Arrays for LEDs T. Yeh, Y. Lin, and P. D. Dapkus (University of Southern California)
10:00 Intermission (15 Minutes)
10:15   3005   Wide Bandgap Semiconductors for Sensing within Extreme Harsh Environments D. G. Senesky (Stanford University)
10:45   3006   ZnS-based Nanostructures: An Unique UV-Light Sensor X. Fang, L. Hu, and L. Wu (Fudan University)
11:15   3007   Detection of SARS Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors Y. Hsu (National Tsing Hua University), G. Lee, J. Chyi (National Central University), C. Chang (Institute of Biomedical Sciences, Academia Sinica), C. Huang, C. Hsu (National Tsing Hua University), T. Huang (Institute of Biomedical Sciences, Academia Sinica), F. Ren (University of Florida), and Y. Wang (National Tsing Hua University)
11:30   3008   n-type Nanostructures / p- GaN or Si Thin Film Positioned by Non-Uniform Electric Field J. Kim (Korea University)
 

Advanced ins Wide Bandgap Semiconductors

TimeProgr#Title and Authors
13:30   3009   Resistive Switching in Zinc-Tin-Oxide and Atomic Layer Deposition of Nanolaminates for Amorphous Oxide Semiconductor Thin Film Transistors J. Conley Jr. (Oregon State University)
14:00   3010  
CANCELLED
Impurity-Induced Disordering in Si- and Mg-doped AlGaN-AlN Superlattices A. Allerman, J. Wierer, Q. Li, M. H. Crawford, and S. Lee (Sandia National Laboratories)
14:30   3011   III-Nitride Growth by PAMBE and Characterizations Towards Green Energy Applications L. Tu, Y. Lin, C. Chang, P. Wadekar, T. Chen, and T. Deng (National Sun Yat-Sen University)
15:00   3012   Phosphor-Free Green and Yellow LEDs in Nano-Patterned and Polarization Controlled Epitaxy C. Wetzel and T. Detchprohm (Rensselaer Polytechnic Institute)
15:30   3013   Improved Hydrogen Sensing Performance of AlGaN/GaN based sensor with Platinum Nanonetworks S. Jang, H. Kim (Dankook University), S. Pearton, and F. Ren (University of Florida)
 

Tuesday, October 9, 2012

328, Level 3, Hawaii Convention Center

Advances in Compound Semiconductor

Co-Chairs:
TimeProgr#Title and Authors
08:45   3014   Revisiting Impurity Doping of III-Nitride Materials for Optical and Magnetic Device Applications J. M. Zavada (National Science Foundation)
09:15   3015   Effects of Proton Irradiation on the Reliability of InAlN/GaN High Electron Mobility Transistors L. Liu, C. Lo, Y. Xi, Y. Wang (University of Florida), H. Kim, H. Kim (Korea University), S. Pearton (University of Florida), O. Laboutin, Y. Cao, J. Johnson (Kopin Corporation), I. Kravchenko (Oak Ridge National Laboratory), and F. Ren (University of Florida)
09:45   3016   Efficiency Droop in GaN-based Light-Emitting Diodes: Mechanisms and Solutions J. Kim (Pohang University of Science and Technology (POSTECH)), S. Hwang, J. Park, D. Kim (POSTECH), J. Cho, and E. Schubert (Rensselaer Polytechnic Institute)
10:15   3017   GaN HEMT Degradation: Effect of RF Stress E. Douglas (Sandia National Laboratories), B. Gila, F. Ren, C. Abernathy, and S. Pearton (University of Florida)
10:45   3018  
CANCELLED
A Survey of Electrical Signatures Characteristic of Step-Stressed InGaP/GaAs HBTs A. G. Baca, A. Scruggs, A. Gorenz, T. Fortune, J. Klem, R. Briggs, J. Clevenger, G. Patrizi, and C. Sullivan (Sandia National Laboratories)
11:15   3019   Direct Die Solder of GaAs Power Amplifier Dies and Application of Electrolessly Plated Nickel Barrier H. Shen and S. Maganti (Skyworks Solutions, Inc.)
11:30   3020   Resistive Switching Characteristics of N-doped ZnO Films Using Atomic Layer Depsition T. Huang (Photonics and Optoelectronics), W. Chang (National Taiwan University), J. Chien (Materials Science and Engineering), C. Kang, P. Yang (National Taiwan University), M. Chen (Materials Science and Engineering), and J. He (National Taiwan University)
11:45   3021   Influence of Catalystic Effect on Transport Behaviors of InAs NWs For High Performance Nanoscale Transistors Y. Chueh (National Tsing Hua University)
 

Compound Semiconductor Process

TimeProgr#Title and Authors
13:30   3022   Semiconductor Nanostructure Direct-Write Using Scanning Probes and Conducting Stamps M. Rolandi (University of Washington)
14:00   3023   CMOS-Compatible Precise Placement of Ge Quantum Dots for Nanoelectronic, Nanophotonic, and Energy Conversion Devices K. Chen, I. Chen, C. Wang, and P. Li (National Central University)
14:30   3024   Why <111>A Pore Propagation Occurs in InP and the Mechanism that Dictates Pore Width R. Lynch (University of Limerick), N. Quill, C. O'Dwyer, S. Nakahara (Materials and Surface Science Institute, University of Limerick), and D. Buckley (University of Limerick)
14:45   3025   TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal Y. Tanaka, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori (Tokyo Institute of Technology), S. Yamasaki (Advanced Industrial Science and Technology), and H. Iwai (Tokyo Institute of Technology)
15:00   3026   Application of Inline X-ray Metrology for Defect Characterization of III-V/Si Heterostructures P. Hung (Sematech), M. Wormington, K. Matney, P. Ryan (Jordan Valley Semiconductors Ltd), K. Dunn (CNSE), A. Wang, R. Hill, M. Wong, J. Price, W. Wang, and G. Bersuker (SEMATECH)
15:15 Intermission (15 Minutes)
15:30   3027  
CANCELLED
Advanced Compound Semiconductor and Silicon Fabrication Techniques for Next-Generation Solar Power Systems G. N. Nielson (Sandia National Laboratories)
16:00   3028   Improvement in Etching Rate of Epilayer Lift-Off for High Concentrated Solar Cell Applications with Low Surface Tension Fluid R. Horng, F. Wu, and M. Tseng (National Chung Hsing University)
16:30   3029   Band Offsets in Dielectric/InGaZnO4 Heterojunctions H. Cho (Pusan National University), K. Kim, E. Douglas, B. Gila, V. Craciun, E. Lambers, F. Ren, and S. Pearton (University of Florida)
17:00   3030   Anodic Formation of Porous InP in KCl Solutions N. Quill, R. Lynch, C. O'Dwyer, and D. Buckley (University of Limerick)
 

Kamehameha Exhibit Hall 3, Level 1, Hawaii Convention Center

E15 - SOTAPOCS 54 Poster Session

Co-Chairs: Pablo Chang
TimeProgr#Title and Authors
o   3031   Cytotoxicity Study of Zinc Oxide Nanoparticles Modified with Biological Coatings R. Chung, W. Wei, R. Lin (National Taipei University of Technology), W. Shih (Metal Industries Research and Development Centre), and H. Wang (Mackay Memorial Hospital)
o   3032   4H-SiC Lateral JFET for Low Power Operational Amplifier Applications W. Lien (University of California, Berkeley), D. G. Senesky (Stanford University), and A. Pisano (University of California, Berkeley)
o   3033   Visible-Blind Ultraviolet Photodetector Fabricated on n-ZnO/LaAlO3/p-Si Heterojunction D. Tsai, C. Kang, H. Wang (National Taiwan University), Y. Chu (National Chiao Tung University), and J. He (National Taiwan University)
 

Wednesday, October 10, 2012

Advances in Compound Semiconductor

Co-Chairs:
TimeProgr#Title and Authors
08:00   3034  
CANCELLED
VCSELs for Atomic Clocks D. K. Serkland, K. Geib, and G. Peake (Sandia National Labs)
08:30   3035   Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics C. Wu (National Taiwan University)
09:00   3036   Direct Observation of Conducting Nano filaments in BMO Resistive Switching Memory C. Kang (National Taiwan University), W. Kuo, C. Huang (National Chiao Tung University), W. Chang (National Taiwan University), W. Wu, Y. Chu (National Chiao Tung University), and J. He (National Taiwan University)
09:15   3037  
CANCELLED
Bloch Oscillations in Two-Dimensional Antidot Arrays W. Pan (Sandia National Laboratory)
09:45 Intermission (15 Minutes)
10:00   3038   Single Donor Devices for Quantum Computing M. Carroll, E. Bielejec, N. Bishop, J. Dominguez, and M. Lilly (Sandia National Laboratories)
10:30   3039   Sulfide Quantum Dots as a Sensitizer for Titanium Dioxide Photoanodes of Solar Cells T. Li, C. Lin, and H. Teng (National Cheng Kung University)
11:00   3040   Multi-Shelled Metal Oxide Hollow Microsphere: Design, Preparation and Property Z. Dong (Institute of Process Engineering, Chinese Academy of Sciences), R. Yu (University of Science & Technology Beijing), and D. Wang (Institute of Process Engineering, Chinese Academy of Sciences)
11:30   3041   Fully Transparent Non-Volatile Memory Using Multi-Layer Graphene Electrode P. Yang (National Taiwan University), S. Jen (National Tsing Hua University), W. Chang (National Taiwan University), P. Chiu (National Tsing Hua University), and J. He (National Taiwan University)
11:45   3042   Hybrid Silicon Solar Cells with Hierarchical Structure for Energy Harvesting W. Wei, C. Ho, S. Tai, H. Wang, A. Li, R. Chung (National Taipei University of Technology), and J. He (National Taiwan University)