Honolulu PRiME 2012 - Honolulu, Hawaii

October 7 - October 12, 2012

PROGRAM INFORMATION
 

E16 - Thin Film Transistors 11 (TFT 11)
 

Monday, October 8, 2012

327, Level 3, Hawaii Convention Center

Oxide TFTs and Fabrication Process I

Co-Chairs: Y. Kuo
TimeProgr#Title and Authors
08:00 Introductory Remarks (10 Minutes)
08:10   3043   Transparent Amorphous Oxide Semiconductor TFTs: History and current status H. Hosono (Tokyo Institute of Technology)
08:50   3044   Top-Gate effects in Dual-Gate Amorphous InGaZnO4 Thin-Film Transistors K. Takechi (NLT Technologies, Ltd.), S. Iwamatsu, T. Yahagi, Y. Watanabe, S. Kobayashi (Yamagata Research Institute of Technology), and H. Tanabe (NLT Technologies, Ltd.)
09:30   3045   Deposition of Low Stress Amorphous Zinc Tin Oxide at Ambient Temperature using a Remote Plasma Sputtering Process Suitable for Delicate Substrates S. M. Pfaendler (University of Cambridge), G. Ercolano, J. Driscoll (Department of Material Science, University of Cambridge), and A. Flewitt (Department of Engineering, University of Cambridge)
09:50 Intermission (30 Minutes)
 

Oxide TFTs and Fabrication Processes II

Co-Chairs: S. Fonash and H. Hosono
TimeProgr#Title and Authors
10:20   3046   MgZnO/ZnO Heterostructure Field-Effect Transistors Fabricated by RF-Sputtering B. Wang (Graduate Institute of Photonics and Optoelectronics & Department of Electrical Engineering, National Taiwan University), I. Cheng, and J. Chen (National Taiwan University)
10:40   3047   a-InGaZnO Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack M. Furuta, T. Kawaharamura (Kochi University of Technology), T. Toda (School of Environmental Science and Engineering, Institute for Nanotechnology, Kochi University of Technology), and W. Dapeng (Kochi University of Technology)
11:00   3048   Simple Aqueous Solution Route for Fabrication of High Performance Oxide TFT B. Bae (Korea Advanced Institute of Science ad Technology (KAIST)), Y. Hwang, J. Seo, and G. Choi (KAIST)
11:20   3049   Fabricating Multiple Channeled Zinc Oxide Thin Film Transistor via Sol-Gel Method G. Chiou, S. Liu (National Chi Nan University), S. Chen (National Tsing Hua University), and H. Chen (National Chi Nan University)
11:40   3050   Improvement of Solution-Processed Oxide Thin-Film Transistors by Ultra-Violet Treatment J. Lee, S. Song, D. Kang, Y. Kim, J. Kwon, and M. Han (Seoul National University)
 

Oxide TFT Device and Reliability

Co-Chairs: H. Hosono and P. Migliorato
TimeProgr#Title and Authors
14:00   3051   Light and Bias Induced Defects in a-IGZO Thin Film Transistors P. Migliorato (Cambridge University), M. Seok, J. Um, M. Chowdhury (Kyung Hee University), and J. Jang (Kyung Hee Univ.)
14:40   3052   Improvement of the Photo-Bias Stability of Zn-Sn-O Field effect Transistors by an Ozone Treatment B. Yang, S. Oh, Y. Kim, and H. Kim (Seoul National University)
15:00   3053   Improvement in the Photo-Induced Bias Instability of Oxide TFT by Controlling Sub-Gap States K. Son, T. Kim, J. Park, H. Kim, S. Seo, J. Seon (Samsung Advanced Institute of Technology), K. Ji, J. Jeong (Inha University), H. Lee, S. Im (Yonsei University), M. Ryu, and S. Lee (Samsung Advanced Institute of Technology)
15:20   3054   Mixed Oxide Thin Film Transistors Under Combinatory Optical Irradiation and Electrical Bias T. L. Alford, R. Vemuri, and W. Mathews (Arizona State University)
15:40   3055   The effect of Zn/Sn Ratio on the Electrical Performance of Amorphous ZrZnSnO (ZZTO) Thin Film Transistors by RF Sputtering I. Chiu, I. Cheng, and J. Chen (National Taiwan University)
 

Tuesday, October 9, 2012

327, Level 3, Hawaii Convention Center

Si-based TFTs I

Co-Chairs: R. Ishihara and O. Bonnaud
TimeProgr#Title and Authors
08:00   3056   Twenty five Years of Improvement of the Silicon Based TFT: From As-Deposited Polycrystalline Silicon to Nanostructured Silicon Deposited at Very Low Temperature T. Mohammed-Brahim and O. Bonnaud (University Rennes 1)
08:40   3057   Beyond the Current Horizontal of Silicon Thin Film Technology: Light-Soaking Free Nano-Crystal Embedded Polymorphous Silicon Thin Film and TFT by Neutral Beam Assisted CVD at Room Temperature M. Hong and J. Jang (Korea University)
09:20   3058   Impacts of Channel Thickness on the Characteristics of N-Type Planar Junctionless Poly-Si Thin-Film Transistors C. Lin, H. Lin, and T. Huang (National Chiao Tung University, Hsinchu, Taiwan, R.O.C.)
09:40 Intermission (40 Minutes)
 

Si-based TFTs II

Co-Chairs: O. Bonnaud and R. Ishihara
TimeProgr#Title and Authors
10:20   3059   Grain Growth Control during Micro-Thermal-Plasma-Jet Irradiation Using Amorphous Si Strips and Slit Masks Y. Fujita, S. Hayashi, K. Sakaike, and S. Higashi (Hiroshima University)
10:40   3060   Decreasing the Off-Current for Vertical TFT by Using an Insulating Layer between Source and Drain P. Zhang, E. Jacques, R. Rogel, and O. Bonnaud (University Rennes 1)
11:00   3061   Thick Single Grain Silicon Formation with Microsecond Green Laser Crystallization A. Arslan (Delft University of Technology), H. Kahlert, P. Oesterlin (Innovavent GmbH), D. Mofrad, R. Ishihara, and C. Beenakker (Delft University of Technology)
11:20   3062   Single-Grain Si TFTs Fabricated by Liquid-Si and Long-Pulse Excimer-Laser R. Ishihara, J. Zhang, M. Trifunovic, M. Van der Zwan (Delft University of Technology), H. Takagishi, R. Kawajiri (Japan Science and Technology Agency), T. Shimoda (Japan Advanced Institute of Science and Technology), and C. Beenakker (Delft University of Technology)
 

Si-based TFTs II Continued

Co-Chairs: K. Takechi and M. P. Hong
TimeProgr#Title and Authors
14:00   3063   Materials, Processing, and Characterization for Printed Flexible Electronics W. S. Wong (University of Waterloo)
14:40   3064   Investigation of Transfer Mechanism of Si Film with Mid-Air Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation K. Sakaike, Y. Kobayashi, S. Nakamura, M. Akazawa, and S. Higashi (Hiroshima University)
15:00   3065   Modes of Operation and Optimum Design for Application of Source-Gated Transistors R. A. Sporea, J. M. Shannon, and S. Silva (University of Surrey)
15:20 Intermission (30 Minutes)
 

Graphene and Organic TFTs

Co-Chairs: M. P. Hong and K. Takechi
TimeProgr#Title and Authors
15:50   3066   CVD Produced Graphene/Silicon Nitride TFTs W. Milne, M. Cole, P. Kidambi (Cambridge University), K. Ying, M. Drapeko, S. Hofmann, and A. Nathan (Engineering Dept, University of cambridge)
16:30   3067   Characterization and Modeling of Organic Field-Effect Transistors G. Horowitz (CNRS)
17:10   3068   Carrier Behavior in a Highly-Doped P3HT Layer and Its Application to Organic Thin Film Transistors D. Tadaki, T. Ma, J. Zhang, S. Iino, Y. Kimura, and M. Niwano (Tohoku University)
 

Kamehameha Exhibit Hall 3, Level 1, Hawaii Convention Center

E16 - Poster Session

Co-Chairs: H. H. Lee
TimeProgr#Title and Authors
o   3069   High Performance Low-Voltage Organic Phototransistors: Interface Modification and the Tuning of Electrical, Photosensitive and Memory Properties X. Liu, G. Dong, L. Duan, L. Wang, and Y. Qiu (Tsinghua University)
o   3070   Influence of Annealing Conditions on the Bias Temperature Stability of MgZnO TFTs Y. Tsai, J. Chen, and I. Cheng (National Taiwan University)
o   3071   Comparative Study of In2O3, ZnO and In-Zn-O Source Solutions for Oxide Channel Thin Film Transistors E. Tokumitsu (Japan Advanced Institute of Science and Technology), T. Shimizu, K. Haga (Tokyo Institute of Technology), and T. Shimoda (Japan Advanced Institute of Science and Technology)
o   3072   Thin-Film Transistor Using Dielectrophoretic Assembly of Single-walled Carbon Nanotubes T. Toda (School of Environmental Science and Engineering, Institute for Nanotechnology, Kochi University of Technology), T. Kawaharamura (Institute for Nanotechnology, Kochi University of Technology), H. Furusawa (School of Environmental Science and Engineering, Institute for Nanotechnology, Kochi University of Technology), and M. Furuta (Kochi University of Technology)
o   3073   Degradation of p-Channel Low Temperature Poly-Si TFTs with Positive Source Pulse Stress H. Liu, S. Chiou, P. Chan, C. Kung, F. Wang (National Chung Hsing University), and T. Kang (Feng-Chia University)
o   3074   Simple Patterning Process of the Polymer Source/Drain electrodes for Organic Thin-Film Transistors Y. Jang (Korea Institute of Machinery & Materials)
o   3075   Influence of Polymer Dielectric Surface Energy on Thin-Film Transistor Performance of Solution-Processed Triethylsilylethynyl Anthradithiophene (TES-ADT) L. Chen, P. Lin (Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan, ROC), C. KIM (Sogang University), M. Chen, P. Huang (Department of Chemistry, National Central University, Chung-Li, Taiwan, ROC.), J. Ho, and C. Lee (Process Technology Division, Display Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan, ROC.)
o   3076   Study of Electronic Structure and Film Composition at Back Channel Surface of Amorphous In-Ga-Zn-O Thin Films A. Hino, T. Kishi, S. Morita, K. Hayashi, and T. Kugimiya (Kobe Steel, Ltd.)
o   3077   Performance Variations of Amorphous-In2Ga2ZnO7 Thin-Film Transistors According to Thin Al2O3 Passivation Layer Deposited by Atomic Layer Deposition S. Rha, U. Kim, J. Jung, W. Jeon, Y. Yoo, E. Hwang, B. Park, and C. Hwang (Seoul National University)
o   3078   Chemical-Structure Tailored, High Performance Indium Gallium Zinc Oxide Thin-Film Transistors S. Jeong, J. Lee, Y. Seo, S. Choi, Y. Choi, and B. Ryu (Korea Research Institute of Chemical Technology)
o   3079   Electrospray Deposited Semiconducting Oxide Thin Films For Display Backplane TFT Application S. LEE (Electronics and Telecommunications Research Insitute(ETRI)) and C. Hwang (ETRI)
o   3080  
CANCELLED
Low-Temperature, Aqueous Solution Processed Amorphous Indium Oxide Thin Film Transistors K. Choi, S. Chang, T. Oh, S. Jeong, K. Lee, Y. Kim, H. Ha, and B. Ju (Korea University)
o   3081   Characteristiscs of Nanocrystalline Silicon Films Deposited by Cat-CVD Below 100 ℃ T. Song, K. Keum, S. Kang, J. Park, J. Kim, and W. Hong (University of Seoul)
o   3082   Influence of Thermal Stress and Kinetic Bias Stress on The Electrical Performance of Mixed Oxide Thin Film Transistors T. L. Alford, S. Husein, and R. Vemuri (Arizona State University)
o   3083   Composition Dependence of the Negative Bias Light Illumination Instability of Indium Zinc Oxide Transistors S. Oh, B. Yang, Y. Kim, and H. Kim (Seoul National University)
o   3084   SKPM Study on Oxide TFT J. Park and H. Cha (ETRI)
o   3085   The Change of Electrical Performance and Stability of Ti, B-doped In-Zn Oxide Thin Film Transistors Depending on Gate Insulators B. Kim, J. Shin, C. Hong, K. Kim, N. Park, and W. Cheong (Electronics and Telecommunications Research Institute)
o   3086   Aqueous Inorganic Inks for Low Temperature Fabrication of Metal Oxide-Based High-Mobility Transparent Thin-Film Transistors C. Liu, W. Lee, and T. Shih (National Cheng Kung University)
 

Wednesday, October 10, 2012

327, Level 3, Hawaii Convention Center

TFT Structures and Materials

Co-Chairs: J. Jang and M. Furuta
TimeProgr#Title and Authors
08:00   3087   Channel Width and Channel Length Dependencies in Amorphous-Oxide-Semiconductor Thin-Film Transistors: From a Device Structure Perspective M. Mativenga, J. Um (Kyung Hee University), R. Mruthyunjaya, J. Chang, G. Heiler, T. Tredwell (Carestream Health, Inc.), and J. Jang (Kyung Hee Univ.)
08:40   3088   Ambipolar SnO Thin-Film Transistors and Inverters L. Liang and H. Cao (Chinese Academy of Sciences)
09:00   3089   Structure and Material Considerations for Thin Film Transistor Applications beyond LCD Driving Y. Kuo (Texas A&M University)
09:40 Intermission (30 Minutes)
 

Advanced Applications

Co-Chairs: M. Furuta and J. Jang
TimeProgr#Title and Authors
10:10   3090   Issues of Backplane Technologies for AMOLED S. Lee, J. Lee, and M. Han (Seoul National University)
10:50   3091   A Novel LTPS TFT Pixel Circuit for Compensating IR Drop of Large Area AMOLED Display S. Lee, S. Kuk, S. Song, M. Song, and M. Han (Seoul National University)
11:10   3092   Memory Thin Film Transistor with Monolayered Nanoparticles through Chemical and Biological Bindings H. Lee, H. Jung, M. Kim, Y. Kim, S. Oh, and T. Yoon (Myongji University)
11:30   3093  
CANCELLED
High Mobility Oxide TFT S. K. Park, M. Ryu, H. Oh, C. Hwang, S. Yang (Electronics and Telecommunications Research Institute), and S. Lim (Heesung Metal LTD.)
 

Advanced Applications Continued

Co-Chairs: H. Hamada and P.-T. Liu
TimeProgr#Title and Authors
14:00   3094   Nanocrystal Floating Gate Memory with Indium-Gallium-Zinc-Oxide Channel and Pt-Fe2O3 Core-Shell Nanocrystals S. Lee, Q. Hu, J. Lee, Y. Baek, H. Lee, and T. Yoon (Myongji University)
14:20   3095   Transparent Amorphous Oxide Semiconductors for System on Panel Applications P. Liu, L. Chu, L. Teng, Y. Fan, and C. Fuh (National Chiao Tung University)
15:00   3096   Thin-Film Transistors on Germanium-on-Glass Substrate R. G. Manley and T. Chuang (Corning Incorporated)
15:20 Intermission (30 Minutes)
 

Novel Materials and Processes

Co-Chairs: P.-T. Liu and H. Hamada
TimeProgr#Title and Authors
15:50   3097   Dual In-Plane-Gate Thin-Film Transistors Gated by Chitosan on Paper Substrates Q. Wan (Chinese Academy of Sciences) and W. Dou (Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences,)
16:10   3098   Highly Stable IGZO TFT with Electro-Less Ni Plated Cu Electrodes S. Nam, T. Moon, K. Lee, K. Lee, S. Yoo, W. Shin (LG Display), and S. Im (Yonsei University)
16:30   3099   Laser Patterned Junctionless In-Plane-Gate Oxide Thin-Film Transistors Arrays L. Zhu and Q. Wan (Chinese Academy of Sciences)
17:00   3100   The Stability and Reliability of Mixed Oxide-Based Thin Film Transistors Under Gamma Irradiation T. L. Alford, A. Indluru, and K. E. Holbert (Arizona State University)
17:20 Intermission (10 Minutes)