Honolulu PRiME 2012 - Honolulu, Hawaii

October 7 - October 12, 2012

PROGRAM INFORMATION

 

E17 - SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 5

 

Monday, October 8, 2012

316A, Level 3, Hawaii Convention Center

Opening and Plenary Session

Co-Chairs: David Harame
TimeProgr#Title and Authors
08:25 Introductory Remarks (20 Minutes)
08:45   3101   Advanced CMOS Scaling and FinFET Technology E. J. Nowak (IBM)
09:40   3102   FinFET--How to Make a Very Short Channel MOSFET C. Hu (Univ. of Calif., Berkeley)
 

FET/Strain Session 1: FinFET

Co-Chairs: Yee-Chia Yeo
TimeProgr#Title and Authors
10:50   3103   Effect of Fin Doping Concentration on the Electrical Characteristics of Germanium-on-Insulator Multi-Gate Field-Effect Transistor B. Liu, X. Gong, C. Zhan (National University of Singapore (NUS)), G. Han (National University of Singapore), N. Daval, C. Veytizou, D. Delprat, B. Nguyen (Soitec), and Y. Yeo (National University of Singapore)
11:10   3104   Germanium Gate-All-Around FETs on SOI H. Chang (GIEE,NTU), S. Hsu, C. Chu (National Nano Device Laboratories), W. Tu, Y. Chen (National Taiwan University), P. Sung, G. Luo (National Nano Device Laboratories), and C. Liu (National Taiwan University)
11:30   3105   Selective Growth Of Strained Ge Channel On Relaxed SiGe Buffer In Shallow Trench Isolation For High Mobility Ge Planar And Fin p-FET B. Vincent, L. Witters, O. Richard, A. Hikavyy, H. Bender, R. Loo, M. Caymax, and A. Thean (imec)
11:50   3106   Stress Techniques and Mobility Enhancement in FinFET Architectures G. Eneman, L. Witters, J. Mitard, G. Hellings, A. De Keersgieter (Imec), D. Brunco (Globalfoundries), A. Hikavyy, B. Vincent, E. Simoen, P. Favia, H. Bender, A. Veloso, T. Chiarella, G. Boccardi, M. Kim, M. Togo, R. Loo, K. De Meyer, N. Horiguchi, N. Collaert, and A. Thean (imec)
 

HBT Session 1: Advanced SiGe HBT Technology

Co-Chairs: Guofu Niu and Mikael Ostling
TimeProgr#Title and Authors
13:40   3107   Advanced Transistor Architectures for Half-Terahertz SiGe HBTs B. Heinemann, A. Fox, and H. Rücker (IHP)
14:10   3108   Understanding the Effects of Epitaxy Artifacts on SiGe HBT Performance through Detailed Process/Device Simulation R. Camillo-Castillo, Q. Liu, P. Cheng, J. Adkisson (IBM Microelectronics), and D. Harame (IBM Systems and Technology Group)
14:30   3109   Improved Frequency Response in a SiGe npn Device through Improved Dopant Activation J. Adkisson (IBM Microelectronics), M. Khater (IBM T.J. Watson Research Center), J. Gambino, P. Cheng, V. Jain, R. Camillo-Castillo (IBM Microelectronics), C. Lavoie (IBM T.J. Watson Research Center), A. Sutton, O. Gluschenkov (IBM Semiconductor Research and Development Center), Q. Liu, T. McDevitt (IBM Microelectronics), S. Engelmann (IBM T.J. Watson Research Center), J. Pekarik (IBM Microelectronics), and D. Harame (IBM Systems and Technology Group)
14:50   3110   Evaluation of RF Noise Source Relative Importance in SiGe HBTs Using Various Noise Representations Z. Xu and G. Niu (Auburn University)
15:10   3111   Strained Silicon Heterojunction Bipolar Transistors A. ONeill (Newcastle University)
15:40   3112   A Self-Aligned Sacrificial Emitter Process for High Performance SiGe HBT in BiCMOS Q. Liu (IBM Microelectronics) and D. Harame (IBM Systems and Technology Group)
 

Tuesday, October 9, 2012

316A, Level 3, Hawaii Convention Center

FET/Processing/Strain Session 1: SiGe and Ge Channel FET

Co-Chairs: Yee-Chia Yeo and Bernd Tillack
TimeProgr#Title and Authors
08:00   3113   Implant Free SiGe-Quantum Well: From Device Concept To High-Performing pFETs J. Mitard, G. Hellings, L. Witters, G. Eneman, A. Hikavyy, B. Vincent, R. Loo, N. Collaert, N. Horiguchi, and A. Thean (imec)
08:30   3114   Effective Condensation Process for Higher Ge Concentration and Thin SiGe layer-on-insulator Substrates in Advanced High Mobility MOSFETs D. LEE, T. Shim, T. Kim, S. Song, S. Lee (Hanyang University), R. Okuyama (Sumco Corporation), and J. Park (Hanyang University)
08:50   3115   SiGe Doped-Channel FET Formed by Sputter Epitaxy Method M. Yoshikawa, H. Otsuka (Tokyo University of Agriculture & Technology), A. Kasamatsu, N. Hirose, T. Mimura, T. Matsui (National Institute of Information and Communications Technology), and Y. Suda (Tokyo University of Agriculture & Technology)
09:10   3116   Hole Mobility Boost of Ge p-MOSFETs by Composite Uniaxial Stress and Biaxial Strain H. Lan, Y. Chen, J. Lin, and C. Liu (National Taiwan University)
09:30 Intermission (20 Minutes)
09:50   3117   Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials F. Conzatti, D. Esseni, P. Palestri, and L. Selmi (University of Udine)
10:20   3118   Physical Mechanism of Enhanced Uniaxial Stress Effect on Carrier Mobility in ETSOI MOSFETs T. Ohashi, O. Shunri, and U. Ken (Tokyo institute of technology)
 

Surfaces and Interfaces Session I

Co-Chairs: Seiichi Miyazaki and Shigeaki Zaima
TimeProgr#Title and Authors
10:40   3119   Reliability of SiGe channel MOS J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, G. Eneman, P. Roussel, M. Cho, T. Kauerauf (imec), T. Grasser (T.U. Wien), L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, and G. Groeseneken (imec)
11:10   3120   Evaluation of Two contact Resistivity References on Si1-xGex for FDSOI 20nm pMOS E. Bourjot (STMicroelectronics), F. Nemouchi, V. Carron (CEA-LETI), Y. Morand (STMicroelectronics), S. Bernasconi, M. Vinet, J. Damlencourt, F. Allain, O. Cueto, D. Lafond (CEA-LETI), and D. Mangelinck (IM2NP,UMR CNRS)
11:30   3121   Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs H. Nakashima, K. Yamamoto (Kyushu University), H. Yang (Kyushu Univerisy), and D. Wang (Kyushu University)
12:00   3122   Thermally Stable NiSi2 for Ge Contact with Schottky Barrier Height Modulation Capability R. Yoshihara, Y. Tamura, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, and H. Iwai (Tokyo Institute of Technology)
12:20   3123   Effect of an Atomically Matched Structure on Fermi-level Pinning at Metal/p-Ge Interfaces K. Kasahara, H. Yoshioka, S. Yamada, T. Nishimura, M. Miyao, and K. Hamaya (Kyushu University)
 

Processing Session 1: Strain, Defects, and Diffusion

Co-Chairs: D. Gruetzmacher and A. Sakai
TimeProgr#Title and Authors
13:50   3124   Understanding Diffusion, Activation, and Related Phenomena in SiGe Alloys: Models and Challenges H. W. Kennel (Intel Corporation)
14:20   3125   Strain Control of Si and Si1-x-yGexCy Layers in Si/Si1-x-yGexCy/Si Heterostructures J. Murota (Tohoku University), T. Kikuchi, and M. Sakuraba (Tohoku Univ.)
14:50   3126   Phosphorus Profile Control in Ge by Si Delta Layers Y. Yamamoto, P. Zaumseil, R. Kurps (IHP), J. Murota (Tohoku University), and B. Tillack (IHP)
15:10   3127   Dopant Enhanced Diffusion for High n-typed Doped Ge Y. Cai, R. E. Camacho-Aguilera, J. Bessette, L. Kimerling, and J. Michel (Massachusetts Institute of Technology)
15:30   3128   A Threading Dislocation Density Study of Ge Epitaxial Layer on Si and The Dependency on Various Post Growth Treatments A. Silber and E. Ginsburg (Micron Semiconductors Israel Ltd.)
15:50 Intermission (15 Minutes)
 

316B, Level 3, Hawaii Convention Center

Optoelectronics Session 1: Solar Cells, Emission, and Photonics

Co-Chairs: Gianlorenzo Masini
TimeProgr#Title and Authors
13:50   3129   Ge Optical Emitters Fabricated by Ge Condensation and Epitaxial Growth K. Oda, K. Tani, S. Saito, and T. Ido (PETRA)
14:20   3130   Group-IV Subcells in Multijunction Concentrator Solar Cells R. R. King, C. Fetzer, P. Chiu, E. Rehder, K. Edmondson, and N. Karam (Spectrolab, Inc.)
14:50   3131   Substrate Design and Thermal Budget Tuning for Integration of Photonic Components in a High-Performance SiGe:C BiCMOS Process D. Knoll, H. Richter, B. Heinemann, S. Lischke, Y. Yamamoto, L. Zimmermann, and B. Tillack (IHP)
15:10   3132   Direct Band-gap Electroluminescence from Strained n-Ge Light Emitting Diodes P. Velha, K. F. Gallacher, D. Dumas, D. J. Paul (University of Glasgow), M. Myronov, and D. Leadley (University of Warwick)
15:30   3133   Parameters Controlling Emission of Terahertz Frequency Electromagnetic Radiation from InAs and GaAs: An Ensemble Monte Carlo Simulation Study D. Cortie and R. Lewis (University of Wollongong)
15:50 Intermission (15 Minutes)
 

316A, Level 3, Hawaii Convention Center

Epitaxy Session 1: Pre-epi Si Surface Cleaning and III-V Compound Semiconductor Hetero-epitaxy

Co-Chairs: Yee-Chia Yeo and Alexander Reznicek
TimeProgr#Title and Authors
16:05   3134   Selective-Area Epitaxial Lateral Overgrowth of InGaAs Microdiscs on Si M. Sugiyama (University of Tokyo)
16:35   3135   III-V/GaP Epitaxy on Si for Advanced Photovoltaics and Green Light Emitters S. A. Ringel, T. Grassman, C. Ratcliff, A. Carlin, J. Carlin, L. Yang, and M. Mills (The Ohio State University)
17:05   3136   Controlling Epitaxial GaAsP/SiGe Heterovalent Interfaces P. Sharma, T. Milakovich, M. Bulsara, and E. A. Fitzgerald (Massachusetts Institute of Technology)
17:25   3137   High Efficiency Low Temperature Pre-epi Clean Method for Advanced Group IV epi Processing V. Machkaoutsan (ASM Belgium), D. Weeks, M. Bauer (ASM America), J. Maes (ASM Belgium), J. Tolle (ASM America), S. Thomas (ASM), A. Alian, A. Hikavyy, and R. Loo (imec)
17:45   3138   Heteroepitaxy of III-V Compound Semiconductors on Si for Logic Applications: Selective Area Epitaxy in Shallow Trench Isolation Structures vs. Direct Epitaxy mediated by Strain Relaxed Buffers M. Cantoro, C. Merckling, S. Jiang, W. Guo, N. Waldron, H. Bender, J. Dekoster, R. Loo, W. Vandervorst, M. Caymax, and M. Heyns (imec)
 

316B, Level 3, Hawaii Convention Center

Optoelectronics Session 2: Lasing, Strain and Interconnects

Co-Chairs: Gianlorenso Masini
TimeProgr#Title and Authors
16:05   3139   Electrically Pumped Lasing from Ge-on-Si J. Michel (Massachusetts Institute of Technology)
16:35   3140   Strain Engineering for Optical Gain in Germanium P. Boucaud (CNRS), M. El Kurdi, M. De Kersauson, A. Ghrib (Univ Paris-Sud), S. Sauvage, R. Jakomin, G. Beaudoin, O. Mauguin, L. Largeau, I. Sagnes (CNRS), G. Ndong, M. Chaigneau, and R. Ossikovski (Ecole Polytechnique)
17:05   3141   Silicon Compatible High Performance Optical Interconnect Technology B. Dutt (APIC Corporation)
17:25   3142   Optical Characterization of Ge-on-Si Grown by using RTCVD T. Kim, Y. Kil, W. Hong, H. Yang, S. Kang, T. Jeong, and K. Shim (Chonbuk National University)
17:45   3143   High Extinction Ratio, Low Energy Consumption Ge Quantum Well Electro-Absorption Modulator with 23 GHz Bandwidth G. Isella (Politecnico di Milano), P. Chaisakul, D. Marris-Morini, M. Saïd Rouifed (Univ. Paris-Sud), D. Chrastina, J. Frigerio (L-NESS Dip. di Fisica - Politecnico di Milano), X. Le Roux, S. Edmond, J. Coudevylle, and L. Vivien (Univ. Paris-Sud)
 

Kamehameha Exhibit Hall 3, Level 1, Hawaii Convention Center

E17 - Poster Session

Co-Chairs:
TimeProgr#Title and Authors
o   3144   Effects of HCl on the Growth of Epitaxial Ge D. Franca (Research Foundation of SUNY)
o   3145   Analysis of Local Electric Conductive Property for Si Nanowire Models Y. Ikeda, M. Senami, and A. Tachibana (Kyoto University)
o   3146   Ge1-xSnx Alloys Pseudomorphically Grown by R. F. Magnetron Sputtering H. Pérez Ladrón de Guevara (Universidad de Guadalajara), Á. Rodríguez Vázquez, H. Navarro Contreras, and M. Vidal Borbolla (Universidad Autónoma de San Luís Potosí)
o   3147   High Quality Silicon Cap Layer for 28nm and Beyond PMOS Processes C. Liao, T. Hsuan, C. Chien, M. Chan (United Microelectronics corp), C. Yang (United Microelectronics Corp.), J. Wu (United Microelectronics Corp), and B. Ramachandran (Applied Materials Inc.)
o   3148   Accurate Reactive Ion Etching of Si, Ge and P Doped Ge in an SF6-O2 Radio-Frequency Plasma C. Wongwanitwattana, V. A. Shah, M. Myronov, E. Parker, T. Whall, and D. Leadley (University of Warwick)
o   3149   Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process R. Kato, M. Kurosawa (Kyushu Univ.), R. Matsumura, T. Sadoh (Kyushu University), and M. Miyao (Kyushu Univ.)
o   3150   Direct Measurement of Silicon Strain Induced by Stressed TiNx Stripes Through Raman Z. Fu, X. Ma, H. Yin, J. Niu, J. Yan (Institute of Microelectronics of Chinese Academy of Sciences), and C. Zhao (Chinese Academy of Sciences)
o   3151   Nano-Engineered GexSi1-x -on Insulator for Heteroepitaxy K. Hossain, O. Holland (Amethyst Research Inc), M. Debnath, T. Mishima, and M. Santos (University of Oklahoma)
o   3152   NMOS SiP Epitaxy Process - Optimizing Facet Growth C. Liao, C. Chien, M. Chan (United Microelectronics corp), C. Yang (United Microelectronics Corp.), J. Wu (United Microelectronics Corp), C. Chung (Applied Materials Inc), and B. Ramachandran (Applied Materials Inc.)
o   3153   Control of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer Insertion A. Ohta, M. Matsui, H. Murakami, S. Higashi (Hiroshima University), and S. Miyazaki (Nagoya Univ.)
o   3154   Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes K. Makihara, M. Fukushima (Nagoya University), A. Ohta, M. Ikeda (Hiroshima University), and S. Miyazaki (Nagoya Univ.)
o   3155   X-ray and Raman Characterization of strained SiGe Layers Treated by Stain Etching W. Zhou, R. Liang, and L. Yan (Tsinghua National Laboratory for information, Institute of Microelectronics, Tsinghua University)
o   3156   Ge-on-Si Bufferless Epitaxial Growth for Photonic Devices R. E. Camacho-Aguilera, Y. Cai, J. Bessette, X. Duan, L. Kimerling, and J. Michel (Massachusetts Institute of Technology)
o   3157   Formation of Large-Grain Ge(111) Films on Insulator by Gold-Induced Layer-Exchange Crystallization at Low Temperature J. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh (Kyushu University)
o   3158   Impedance Spectroscopy of GeSn/Ge Heterostructures by a Numerical Method B. Baert (University of Liege), O. Nakatsuka, S. Zaima (Nagoya University), and N. Nguyen (University of Liege)
o   3159   Improvements in Atomic Layer Deposition Nucleation on Ge(100) and SiGe(100) via HOOH dosing T. Kaufman-Osborn, J. Lee, K. Kiantaj, and A. Kummel (University of California, San Diego)
o   3160   Orientation Dependence of Si1-xCx:P Growth and the Impact on FinFET Structures J. Tolle, D. Weeks, M. Bauer (ASM America), V. Machkaoutsan, J. Maes (ASM Belgium), M. Togo, A. Hikavyy, S. Brus, and R. Loo (imec)
o   3161   High Throughput SEG of Highly In-Situ Doped SiCP/SiP Layers for NMOS Devices Using a Si3H8SiH3CH3/PH3/Cl2 based CDE Process M. Bauer (ASM America)
o   3162   Ge-on-Si: Single-Crystal Selective Epitaxial Growth in a CVD reactor A. Sammak, W. De Boer, and L. Nanver (TUDelft)
o   3163   The Structural and Electrical Properties in CeO2 Dielectric on Ge Substrate for MOS Capacitors by Atomic Layer Deposition with Ce(iprCp)3 I. Oh, M. Kim, J. Park (Yonsei University), J. Gatineaub, K. Changhee (K.K. Air Liquide Laboratories), and H. Kim (Yonsei University)
o   3164   Point-of-Use Sampling and Organic Impurity Analysis for Bulk Gases in Semiconductor Processing J. PARK, S. Shin*, Y. Lee*, P. Jun*, and J. Kim* (SAMSUNG ELECTRONICS Co.,Ltd)
o   3165   Electronic Band Structure and Effective Masses of Ge1-xSnx Alloys K. Low, Y. Yang, G. Han (National University of Singapore), W. Fan (Nanyang Technological University), and Y. Yeo (National University of Singapore)
o   3166   Multi-Wavelength High Resolution Micro-Raman and Optical Reflectance Characterization of Nano-Scale Strained Silicon-on-Insulator Substrates T. Kim, T. Shim (Hanyang University), W. Yoo (WaferMasters, Inc.), and J. Park (Hanyang University)
o   3167   Theoretical Calculation of Defects Formation Under Thermal Equilibrium in Heavily n-type Doped Germanium K. Takinai, Y. Ishikawa, and K. Wada (The University of Tokyo)
o   3168   Strain Engineering in GeSnSi Materials H. Radamson, M. Noroozi, A. Jamshidi, and M. Ostling (Royal institute of Technology (KTH))
o   3169   Optimization of SiC:P Raised Source Drain Epitaxy for Planar 20nm Fully Depleted SOI MOSFET Structures N. Loubet (STMicroelectronics), T. Nagumo (Renesas), T. Adam (IBM), Q. Liu (STMicroelectronics), M. Raymond (GLOBALFOUNDRIES), K. Cheng, A. Khakifirooz, Z. Zhu (IBM), P. Khare (STMicroelectronics), V. Paruchuri (IBM Research), B. Doris (IBM), and R. Sampson (STMicroelectronics)
o   3170   Evidence of Boron Cluster Formation in Ultra-Shallow Ion Implanted Ge B. R. Yates, B. Darby, N. Rudawski (University of Florida), D. Petersen, O. Hansen (Technical University of Denmark), R. Lin, P. Nielsen (CAPRES A/S), A. Kontos (Applied Materials), and K. Jones (University of Florida)
o   3171   Strain Evolution of Si1-xGex Selective Epitaxial Growth in Steps S. Koo, S. Kim, and D. Ko (Yonsei University)
o   3172   Formation of Silicene and 2D Si Sheets on Ag(111): Growth Mode, Structural and Electronic Properties P. Vogt, T. Bruhn (TU-Berlin), A. Resta (CNRS-CINaM), B. Ealet (Aix-Marseille University), P. De Padova (CNR-ISM), and G. Le Lay (Aix-Marseille University)
o   3173   Investigations on GeO Disproportionation Using X-ray Photoelectron Spectroscopy S. Wang (Institute of Microelectronics, Chinese Academy of Sciences), H. Liu (Chinese Academy of Sciences), T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi (The University of Tokyo)
o   3174   The Oxidation of Germanium Surfaces Investigated at the Atomic Scale: Site-specific Atomic and Electronic Structure C. Fleischmann, K. Schouteden (KU Leuven), C. Merckling, S. Sioncke, M. Meuris (imec), C. Van Haesendonck, K. Temst, and A. Vantomme (KU Leuven)
 

Wednesday, October 10, 2012

316A, Level 3, Hawaii Convention Center

GeSn Session 1: GeSn Photonics

Co-Chairs: Benjamin Vincent and Gianlorenzo Masini
TimeProgr#Title and Authors
08:00   3175   GeSn Photodetection and Electroluminescence Devices on Si M. Oehme, E. Kasper, and J. Schulze (University of Stuttgart)
08:30   3176   Ge1-x-ySixSny Photodiodes with 1 eV Pptical Gaps Grown on Si(100) and Ge(100) Platforms R. Beeler, J. Menendez, and J. Kouvetakis (Arizona State University)
08:50   3177   MBE Growth of GeSn and SiGeSn Heterojunctions for Photonic Devices J. S. Harris, R. Chen, H. Lin, Y. Huo, E. Fei, and T. Kamins (Stanford University)
 

316B, Level 3, Hawaii Convention Center

Epitaxy Session 2: New Materials

Co-Chairs: Yihwan Kim and Masao Sakuraba
TimeProgr#Title and Authors
08:00   3178   Beyond Graphene: Silicene and Germanene Novel Two-Dimensional Electronic Materials G. Le Lay (Aix-Marseille University), A. Resta (CNRS-CINaM), B. Ealet (Aix-Marseille University), P. De Padova (CNR-ISM), T. Bruhn, and P. Vogt (TU-Berlin)
08:30   3179   Epitaxial Growth of Low Defect SiGe Buffer Layers for Integration of New Materials on 300 mm Silicon Wafers G. Kozlowski, T. Schroeder (IHP), and P. Storck (Siltronic AG)
09:00   3180   Synthesis of Monocrystalline Silicon-like (III-V)-Si Semiconductors: Structural and Optical Properties A. Chizmeshya, J. Kouvetakis, T. Watkins, R. Beeler, and J. Menendez (Arizona State University)
09:20   3181   Strained Ge Core/Si(Ge) Shell Nanowires: Stability and Surface Defect Passivation P. C. McIntyre (Stanford University)
 

316A, Level 3, Hawaii Convention Center

Emerging Applications Session 1: Quantum Effects / Spintronics

Co-Chairs: Tejas Krishnamohan
TimeProgr#Title and Authors
10:05   3182   Spin Coherence in Si and Applications to Quantum Information Processing S. Lyon, A. M. Tyryshkin, J. He, and R. M. Jock (Princeton University)
10:35   3183   Single-Shot Readout of Singlet-Triplet Qubit States in a Si/SiGe Double Quantum Dot J. Prance, Z. Shi, C. Simmons, D. Savage, M. Lagally (University of Wisconsin-Madison), L. Schreiber, L. Vandersypen (Kavli Institute of Nanoscience, TU Delft), M. Friesen, R. Joynt, S. Coppersmith, and M. Eriksson (University of Wisconsin-Madison)
11:05   3184   A Design Scheme for Topological Insulators based Bonds, Bands, Symmetry and Spin Orbit Coupling C. Felser, L. Müchler, C. Stanislav (Max Planck Institute Chemical Physics of Solids), H. Zhang, and S. Zhang (Stanford University)
11:25   3185   Measurement and Control of Individual Electron Spins in Silicon MOS-based Quantum Dots H. Jiang (UCLA)
 

316B, Level 3, Hawaii Convention Center

Surfaces and Interfaces Session 2: Nanowires and New Materials

Co-Chairs: Seiichi Miyazaki and Paul McIntyre
TimeProgr#Title and Authors
10:05   3186   Non Planar Non Si CMOS - Challenges and Opportunities C. Hobbs, K. Ang, R. Hill, I. Ok, B. Min (SEMATECH), D. Franca (Research Foundation of SUNY), H. Stamper, S. Vivekanand, M. Rodgers, S. Gausepohl (CNSE), P. Kirsch, and R. Jammy (SEMATECH)
10:35   3187   Phonon Dispersion in <100> Si Nanowire Covered with SiO2 Film Calculated by Molecular Dynamics Simulation T. Watanabe, T. Zushi, M. Tomita, R. Kuriyama, N. Aoki, and T. Kamioka (Waseda University)
10:55   3188   Electron Transport and Strain Mapping in Ge-SixGe1-x Core-Shell Nanowire Heterostructres E. Tutuc (The University of Texas at Austin)
11:25   3189   Liquid-Phase Deposition of Thin Si and Ge Films Based on Ballistic Electro-reduction T. Ohta, R. Mentek (Tokyo Univ. of A & T), B. Gelloz (Nagoya University), N. Mori (Osaka Univ.), and N. Koshida (Tokyo University of Agriculture and Technology)
11:45   3190   Evidence of Layer-by-Layer Oxidation of Ge Surfaces by Plasma Oxidation Through Al2O3 R. Zhang, P. Huang, J. Lin, M. Takenaka, and S. Takagi (The University of Tokyo)
 

316A, Level 3, Hawaii Convention Center

Processing Session 2: Germanium and Nanoscaled Devices

Co-Chairs: Harold W. Kennel and J. Murota
TimeProgr#Title and Authors
13:40   3191   GOI substrates -Fabrication and Characterization- A. Sakai, S. Yamasaka, J. Kikkawa, Y. Nakamura (Osaka University), Y. Moriyama, T. Tezuka (GNC, AIST), S. Takeuchi, and K. Izunome (Covalent Silicon Corp.)
14:10   3192   Strained Nanoscaled Devices D. Gruetzmacher, S. Mantl (Forschungszentrum Jülich), Q. Zhao, S. Richter, L. Knoll, J. Moers, J. Gerharz, G. Mussler, D. Buca, and R. Minamisawa (Forschungszentrum Juelich)
14:40   3193   Effect of Two-step Oxidation in Ge Condensation on Surface Roughness Property of Relaxed SiGe layer-on-insulator Substrates T. Shim, T. Kim, D. LEE (Hanyang University), R. Okuyama (SUMCO Corporation), and J. Park (Hanyang University)
15:00   3194   Simple Fabrication of Suspended Germanium Structures and Their Electrical Properties from High Quality Ge on Si(001) Layers V. A. Shah, M. Myronov, C. Wongwanitwatana, R. Morris, M. Prest, J. Richardson-Bullock, E. Parker, T. Whall, and D. Leadley (University of Warwick)
15:20   3195   Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting-Growth R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, T. Sadoh, and M. Miyao (Kyushu University)
15:40   3196   Modeling Two Dimensional Solid Phase Epitaxial Growth for Patterned Ge Substrates B. Darby, B. R. Yates, A. Kumar (University of Florida), A. Kontos (Applied Materials), R. Elliman (Australian National University), and K. Jones (University of Florida)
 

316B, Level 3, Hawaii Convention Center

Optoelectronics Session 3: Receivers, Emitters, and Interconnects

Co-Chairs: Gianlorenzo Masini
TimeProgr#Title and Authors
13:40   3197   Germanium/Silicon Heterostructures for Terahertz Emission R. W. Kelsall, V. Dinh, P. Ivanov, A. Valavanis, L. Lever, Z. Ikonic (University of Leeds), P. Velha, D. Dumas, K. F. Gallacher, D. J. Paul (University of Glasgow), J. Halpin, M. Myrnov, and D. Leadley (University of Warwick)
14:10   3198   Ge Photodiodes for CMOS Photonics Optical Engines and Interconnects S. Sahni and G. Masini (Luxtera)
14:40   3199   Long Wavelength ≥1.9 μm Germanium for Optoelectronics Using Process Induced Strain P. Velha, D. J. Paul (University of Glasgow), M. Myronov, and D. Leadley (University of Warwick)
15:00   3200   Single Photon Emitters on Si substrate S. Bietti (Universita' degli Studi di Milano-Bicocca), L. Cavigli, M. Abbarchi (Universita' di Firenze), G. Isella, J. Frigerio (Politecnico di Milano), C. Frigeri (CNR-IMEM Parma), A. Vinattieri, M. Gurioli (Universita' di Firenze), and S. Sanguinetti (Universita' degli Studi di Milano-Bicocca)
15:20   3201   Advanced GE-ON-SI Telecommunication Receivers C. R. Doerr (ACACIA COMMUNICATIONS)
 

316A, Level 3, Hawaii Convention Center

Strain Session 1: Channels, Source/Drain, and GaN

Co-Chairs: Ken Uchida
TimeProgr#Title and Authors
16:15   3202   Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and Semipolar GaN by Dislocation Glide J. S. Speck (University of California Santa Barbara)
16:45   3203   Channel Strain Evolution of Recessed Source/Drain Si1-xCx Structures by Modifying Scaling Factors S. Kim, D. Byeon, M. Jung, I. Lee, D. Ko (Yonsei University), Y. Kim (Applied Materials), and H. Lee (Sungkyunkwan University)
17:05   3204   High Ge Content SiGe Selective Processes for Manufacturing Source/Drain in the Next Generations of pMOS Transistors A. Hikavyy, W. Vanherle, L. Witters, B. Vincent, J. Dekoster, and R. Loo (imec)
17:25   3205   Formation of Uniaxially Strained Si/Ge Channels on SiGe Buffers Strain-Controlled with Selective Ion Implantation K. Sawano, Y. Hoshi, S. Nagakura (Tokyo City University), K. Arimoto, K. Nakagawa (University of Yamanashi), N. Usami (Tohoku University), and Y. Shiraki (Tokyo City University)
 

316B, Level 3, Hawaii Convention Center

Emerging Applications Session 2: Quantum Effects / Spintronics

Co-Chairs: Tejas Krishnamohan
TimeProgr#Title and Authors
16:15   3206   Coherent Manipulation of a Si/SiGe-based Singlet-Triplet Qubit M. G. Borselli (HRL Laboratories LLC)
16:45   3207   Spin Generation and Relaxation in Ge/SiGe Quantum Wells G. Isella, F. Bottegoni, S. Cecchi, A. Ferrari, F. Ciccacci (Politecnico di Milano), F. Pezzoli, A. Giorgioni, E. Gatti, E. Grilli, M. Guzzi (Università di Milano Bicocca), C. Lange, N. Koester, R. Woscholski, S. Chatterjee (Philipps-Universitt Marburg), D. Trivedi, P. Li, Y. Song, and H. Dery (University of Rochester)
17:15   3208   Enhancement-Mode Buried Strained Silicon Channel Double Quantum Dot with Integrated Electrometer M. Carroll, N. Bishop (Sandia National Laboratories), T. Lu, T. Pluym, and P. Kotula (Sandia National Labs)
17:35   3209   Local Quantity Analysis of Nanosize Electronics and Spintronics Material M. Senami and A. Tachibana (Kyoto University)
 

316A, Level 3, Hawaii Convention Center

Reception and Workshop on Next Generatin Devices

Co-Chairs: David Harame
TimeProgr#Title and Authors
19:00 Reception (30 Minutes)
19:30   3210   (Panel Discussion) How Far Can We Push Si CMOS and What are the Alternatives for Future ULSI D. Harame (IBM Systems and Technology Group)
21:00 Tak Ning (IBM, USA) (5 Minutes)
21:05 Shinichi Takaga (University of Tokyo, Japan) (5 Minutes)
21:10 Witek Maszara (Global Foundries, USA) (5 Minutes)
21:15 Cor Claeys (imec, Belgium) (5 Minutes)
21:20 Ken Uchida (Keio University, Japan) (5 Minutes)
21:25 Paolo Gargini (Intel, USA) (5 Minutes)
 

Thursday, October 11, 2012

316A, Level 3, Hawaii Convention Center

GeSn Session 2: GeSn Epitaxy

Co-Chairs: Benjamin Vincent
TimeProgr#Title and Authors
08:00   3211   GeSn Materials: Challenges and Applications R. Loo, V. Benjamin, F. Gencarelli, E. Geert, W. Liesbeth, C. Matty, H. Marc, and T. Aaron (imec)
08:30   3212   GeSn Alloys on Si Using Deuterated Stananne and Higher-Order Germanes: Synthesis and Properties G. Grzybowski, R. Beeler, L. Jiang, A. Chizmeshya, J. Kouvetakis, and J. Menendez (Arizona State University)
08:50   3213   Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn F. Gencarelli, B. Vincent, A. Kumar (imec), J. Demeulemeester, A. Vantomme (KU Leuven), A. Franquet, J. Meersschaut, W. Vandervorst, R. Loo, M. Caymax (imec), K. Temst (KU Leuven), and M. Heyns (imec)
09:10   3214   Reduced Pressure CVD Epitaxial Growth of Ge1-xSnx Using SnCl4 and Ge2H6 S. Wirths, D. Buca, A. Tiedemann, P. Bernardy, B. Holländer, T. Stoica, D. Grützmacher (Forschungszentrum Juelich), and S. Mantl (Forschungszentrum Jülich)
09:30   3215  
CANCELLED
Thermal Chemical Vapor Deposition of Epitaxial Germanium Tin Alloys Y. Huang, C. Wang, M. Jin, E. Sanchez (Applied Materials, Inc.), and Y. Kim (Applied Materials)
 

GeSn Session 3: GeSn Epitaxy

TimeProgr#Title and Authors
10:05   3216   Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content S. Zaima, O. Nakatsuka, M. Nakamura (Nagoya University), W. Takeuchi (Nagoya Univ.), Y. Shimura (Nagoya University), and N. Taoka (Nagoya Univ.)
10:35   3217   Growth of Ge1-xSnx Alloys Using Combined Sources of Solid Tin and Gaseous Germane S. Su, B. Cheng, D. Zhang, G. Zhang, C. Xue, and Q. Wang (Institute of Semiconductors, Chinese Academy of Sciences)
10:55   3218   Growth and Characterization of Heteroepitaxial Layers of Ge1-x-ySixSny Ternary Alloy T. Yamaha (Nagoya Univ.), O. Nakatsuka (Nagoya University), S. Takeuchi (Covalent Silicon Corp.), W. Takeuchi, N. Taoka (Nagoya Univ.), K. Araki (Covalent Materials Co.), K. Izunome (Covalent Silicon Corp.), and S. Zaima (Nagoya University)
11:15   3219   Single Crystalline GeSn on Silicon by Solid Phase Crystallization R. Lieten, S. Decoster, M. Menghini, J. Seo, A. Vantomme, and J. Locquet (KU Leuven)
11:35   3220   Tin Deuteride (SnD4) Stabilization R. F. Spohn and C. Richenberg (Praxair, Inc.)
 

GeSn Session 4: GeSn FET

Co-Chairs: Benjamin Vincent and Yee-Chia Yeo
TimeProgr#Title and Authors
13:10   3221   Tin-Incorporated Source/Drain and Channel Materials for Field-Effect Transistors Y. Yeo, G. Han (National University of Singapore), X. Gong (National University of Singapore (NUS)), L. Wang, W. Wang, Y. Yang (National University of Singapore), P. Guo, B. Liu (NUS), S. Su, G. Zhang, C. Xue (Institute of Semiconductors, Chinese Academy of Sciences), and B. Cheng (State Key Laboratory on Integrated Optoelectronics)
13:40   3222   GeSn Channel n and p MOSFETs S. Gupta, R. Chen (Stanford University), B. Vincent, D. Lin (IMEC), B. Magyari-Kope (Stanford University), M. Caymax, J. Dekoster (IMEC), J. S. Harris, Y. Nishi, and K. Saraswat (Stanford University)
14:10   3223   High Hole Mobility in Strained Germanium-Tin (GeSn) Channel pMOSFET Fabricated on (111) Substrate G. Han (National University of Singapore), S. Su (Institute of Semiconductors, Chinese Academy of Sciences), Y. Yang, P. Guo (National University of Singapore), X. Gong (National University of Singapore (NUS)), L. Wang, W. Wang, C. Guo (National University of Singapore), G. Zhang, C. Xue, B. Cheng (Institute of Semiconductors, Chinese Academy of Sciences), and Y. Yeo (National University of Singapore)
14:30   3224   Negative Bias Temperature Instability Study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 Passivation, HfO2 High-k Dielectric and TaN Metal Gate X. Gong (National University of Singapore (NUS)), S. Su (Institute of Semiconductors, Chinese Academy of Sciences), B. Liu (National University of Singapore (NUS)), L. Wang, W. Wang, Y. Yang, E. Kong (National University of Singapore), B. Cheng (Institute of Semiconductors, Chinese Academy of Sciences), G. Han, and Y. Yeo (National University of Singapore)
 

Emerging Applications Session 3: Novel Devices and Memories

Co-Chairs: Tejas Krishnamohan
TimeProgr#Title and Authors
15:05   3225   Si/SiGe Thermoelectric Generators D. J. Paul, A. Samarelli, L. Ferre Llin, Y. Zhang, J. Weaver, P. Dobson (University of Glasgow), S. Cecchi (Politecnico di Milano), J. Frigerio, F. Isa (L-NESS, Politecnico di Milano), D. Chrastina (L-NESS Dip. di Fisica - Politecnico di Milano), G. Isella (Politecnico di Milano), T. Etzelstorfer, J. Stangl (Johannes Kepler Universität), and E. Müller Gubler (ETH Zurich)
15:25   3226   SiGe Band-to-Band Tunneling Calibration based on p-i-n Diodes: Fabrication, Measurement and Simulation K. Kao, A. Verhulst, R. Rooyackers, A. Hikavyy, R. Loo, A. Milenin (imec), J. Tolle (ASM America), H. Dekkers, E. Simoen (imec), V. Machkaoutsan, J. Maes (ASM Belgium), K. De Meyer, N. Collaert, M. Heyns, C. Huyghebaert, and A. Thean (imec)
15:45   3227   Tunneling Field-Effect Transistor with Novel Ge/In0.53Ga0.47As Tunneling Junction P. Guo, Y. Yang (National University of Singapore), Y. Cheng (Institute of Materials Research and Engineering), G. Han (National University of Singapore), C. Chia (Institute of Materials Research and Engineering), and Y. Yeo (National University of Singapore)
16:05   3228   Germanium Tin Tunneling Field Effect Transistor for Sub-0.4 V Operation Y. Yang, K. Low, G. Han, and Y. Yeo (National University of Singapore)
16:25   3229   Si/SiGe Tunneling Static Random Access Memories G. Ternent and D. J. Paul (University of Glasgow)
16:45   3230   Ge Surface-Energy-Driven Secondary Grain Growth for Vertical Channel in 3D NAND Flash Memories S. Lee, Y. Son, and E. Yoon (Seoul National University)
 

316B, Level 3, Hawaii Convention Center

Epitaxy Session 3: In Situ Doping of Si, SiGe, and Ge Epilayers

Co-Chairs: Roger Loo and Bernd Tillack
TimeProgr#Title and Authors
15:05   3231   Epitaxial Growth and Applications of Low-Resistivity Phosphorous-Doped Si1-xCx T. N. Adam (University at Albany), N. Loubet (STMicroelectronics), A. Reznicek, V. Paruchuri (IBM Research), R. Sampson (STMicroelectronics), and D. Sadana (IBM Research)
15:35   3232   Selective Epitaxial Growth of Heavily Boron-Doped Silicon with Uniform Doping Depth Profile Z. Zhu, Z. Cong, and R. Balasubramanian (Applied Materials Inc.)
15:55   3233   High Tensile Strained In-Situ Phosphorus Doped Silicon Epitaxial Film for nMOS Applications Z. Ye, S. Chopra, R. Lapena, Y. Kim, and S. Kuppurao (Applied Materials)
16:15   3234   Microstructure Development and Its Effects on the Electrical Properties in Epitaxially Grown In-Situ Boron and Carbon (co)-doped Highly Strained High Percentage Silicon-Germanium Layers A. Reznicek (IBM Research), T. N. Adam (University at Albany), J. Li, Z. Zhu (IBM Semiconductor Research and Development Center), H. Hovel, J. De Souza (IBM Thomas J. Watson Research Center), S. W. Bedell (IBM T.J. Watson Research Center), V. Paruchuri (IBM Thomas J. Watson Research Center), and D. Sadana (IBM T.J. Watson Research Center)
16:35   3235   In Situ Boron (B) Doped Germanium (Ge:B) Grown on (100), (110), and (111) Silicon: Crystal Orientation and B Incorporation Effects G. Han, Q. Zhou, P. Guo, W. Wang, Y. Yang, and Y. Yeo (National University of Singapore)
 

Friday, October 12, 2012

316A, Level 3, Hawaii Convention Center

Related Compounds Session 1: Heterogeneous Integration

Co-Chairs: Alexander Reznicek
TimeProgr#Title and Authors
08:00   3236   Materials Integration for III-V/SiGe+CMOS Integrated Circuit Platforms (Invited) E. A. Fitzgerald, P. Sharma, M. Bulsara, T. Milakovich (Massachusetts Institute of Technology), S. Ringel, A. Pitera, J. Hennessy, and A. Malonis (4Power LLC)
08:30   3237   Heterogeneous Integration of III-V Devices and Si CMOS on a Silicon Substrate T. Kazior (Raytheon)
09:00   3238   Heterogeneous Integration of InP HBTs on CMOS: Leveraging and Providing Value to Conventional Silicon Technologies J. C. Li, Y. Royter, P. Patterson, T. Hussain, J. Duvall, M. Montes, I. Valles, F. Ku, M. Boag-O'Brien, A. Lopez, D. Le, D. Zehnder, S. Kim, S. Chen, T. Oh, M. Akmal, E. Wang, D. Hitko, M. Sokolich, D. Chow, P. Brewer, and K. Elliott (HRL Laboratories LLC)
09:30   3239   Wafer-level Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETs H. Lee, Z. Li, M. Sun, K. Ryu, and T. Palacios (Massachusetts Institute of Technology)
 

Related Compounds Session 2: Processing

TimeProgr#Title and Authors
10:15   3240   Scalable GaN-on-Silicon Using Rare Earth Oxide Buffer Layers F. Arkun (Translucent Inc), M. Lebby, R. Dargis, R. Roucka, R. S. Smith, and A. Clark (Translucent Inc.)
10:45   3241   Formation and Characterization of Nickel Germanosilicide on Si1-xGex/Si/SiO2/Si W. Yoo (WaferMasters, Inc.), N. Hasuike, H. Harima, and M. Yoshimoto (Kyoto Institute of Technology)
11:05   3242   Low Specific Ohmic Contacts to n-type Germanium Using a Low Temperature NiGe Process K. F. Gallacher, P. Velha, D. J. Paul, I. Maclaren (University of Glasgow), M. Myronov (University of Warwick), and D. Leadly (Warwick University)
11:25   3243   Formation of 1.7-nm-thick-EOT Germanium Dioxide Film with a High-Quality Interface Using a Direct Neutral Beam Oxidation Process A. Wada (Tohoku University), R. Zhang, S. Takagi (The University of Tokyo), and S. Samukawa (Tohoku University)
11:45 Concluding Remarks (15 Minutes)