Honolulu PRiME 2012 - Honolulu, Hawaii

October 7 - October 12, 2012

PROGRAM INFORMATION
 

E2 - Atomic Layer Deposition Applications 8
 

Monday, October 8, 2012

304B, Level 3, Hawaii Convention Center

General Session

Co-Chairs:
TimeProgr#Title and Authors
08:30 Introductory Remarks (10 Minutes)
08:40   2456   Fabrication of Sb2Te3 and Bi2Te3 Multilayer Composite Films by Atomic Layer Deposition K. Zhang, D. Nminibapiel, M. Tangirala, H. Baumgart (Old Dominion University), and V. Kochergin (MicroXact Inc.)
09:00   2457   Trimethylaluminum-Based Atomic Layer Deposition of Al:MO2 (M=Zr, Hf): A Viable Route to Integrate High-Permittivity Oxides on In0.53Ga0.47As Substrates A. Molle, E. Cianci, A. Lamperti, C. Wiemer, S. Baldovino, L. Lamagna, S. Spiga, M. Fanciulli (CNR-IMM), G. Brammertz, C. Merckling, and M. Caymax (imec)
09:40 Intermission (20 Minutes)
 

Reaction Mechanisms I

TimeProgr#Title and Authors
10:00   2458   Are Ions Good or Bad during Plasma-Assisted ALD H. B. Profijt and W. Kessels (Eindhoven University of Technology)
10:40   2459   Atomic Layer Deposition of Mo: Al2O3 Nanocomposites with Tunable Resistivity A. U. Mane and J. W. Elam (Argonne National Laboratory)
11:00   2460   In Situ Study of ALD Processes Using Synchrotron-based X-ray Fluorescence and Scattering Techniques J. Dendooven, K. Devloo-Casier, M. Ide (Ghent University), K. Grandfield (University of Antwerp), K. F. Ludwig (Boston University), S. Bals (University of Antwerp), P. Van Der Voort, and C. Detavernier (Ghent University)
11:40   2461   Reaction Mechanism of Non-Heating SiO2 Atomic Layer Deposition by Using TDMAS and Plasma Excited Water Vapor F. Hirose, K. Kanomata, M. Degai, and K. Momiyama (Yamagata University)
 

Oxides

TimeProgr#Title and Authors
14:00   2462   Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Grown by Plasma-Assisted ALD V. Longo, M. A. Verheijen, F. Roozeboom, and W. Kessels (Eindhoven University of Technology)
14:20   2463   TiO2-Based Metal-Insulator-Metal Structures for Future DRAM Storage Capacitors K. Fröhlich (Institute of Electrical Engineering SAS), B. Hudec, M. Tapajna, K. Hušeková, A. Rosová (Institute of Electrical Engineering, SAS), J. Aarik, R. Rammula, A. Kasikov, T. Arroval (Institute of Physics, University of Tartu), K. Murakami, M. Rommel, and A. J. Bauer (Fraunhoffer Institute for Integrated Systems and Dvice Technology)
15:00   2464   Application of the Plasma Surface Modification for Uniform Al2O3 Films Grown by Atomic Layer Deposition on Polyethylene Blown Film G. Lee, K. Son (Korea University), S. Park (Korea University, Mechanical Engineering), J. Shim (Korea University), and B. Choi (Korea University, Mechanical Engineering)
15:20   2465   Atomic Layer Deposition of Molybdenum Oxide Using Bis(Tert-Butylimido)Bis(Dimethylamido) Molybdenum A. Bertuch, L. Lecordier, M. Dalberth, G. Sundaram, J. Becker (Cambridge Nanotech), E. Deguns (Unaffiliated), M. Saly, D. Moser, and R. Kanjolia (SAFC Hitech)
15:40   2466   Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD S. E. Potts, H. B. Profijt, R. Roelofs, and W. Kessels (Eindhoven University of Technology)
 

Tuesday, October 9, 2012

304B, Level 3, Hawaii Convention Center

Energy

Co-Chairs:
TimeProgr#Title and Authors
08:20   2467   Growth Characteristics and Properties of Yttrium Oxide Thin Films by Atomic Layer Deposition from Novel Y(iPrCp)3 Precursor and O3 R. Xu, S. Selvaraj, N. Azimi, and C. G. Takoudis (University of Illinois at Chicago)
08:40   2468   Electrocatalytic Activity of Platinum Grown by Atomic Layer Deposition on Carbon Nanotubes for Si-Based DMFC Applications A. Johansson, R. Yang (Danish Technological Institute), B. Dalslet, J. V. Larsen, K. Haume (Technical University of Denmark), L. H. Christensen (Danish Technological Institute), and E. V. Thomsen (Technical University of Denmark)
09:00   2469   Atomic Layer Deposition of Copper (I) Sulfide Using Commercially Produced Precursors S. Christensen, A. Dameron, T. Gennett, and I. Repins (National Renewable Energy Laboratory)
09:20   2470   High Performance Core-Shell Nanowire Array Devices Prepared by Atomic Layer Deposition H. Kim (Yonsei University)
09:40 Intermission (20 Minutes)
 

Novel Applications

TimeProgr#Title and Authors
10:00   2471   Metal Oxide ALD Films for Low Power Sensor Applications S. H. Brongersma (Holst Centre / imec)
10:40   2472   Enabling High Performance Detectors and Optics for Astronomy and Planetary Exploration with ALD F. Greer (Jet Propulsion Laboratory)
11:20   2473   Nanomechanical Properties of Ultra Thin Films Synthesized by Atomic Layer Deposition H. Baumgart (Old Dominion University)
 

Metals

TimeProgr#Title and Authors
14:00   2474   Study on Growth Characteristics of ALD RuO2 Thin Films with Deposition Conditions W. Kim (Samsung Electronics Co. Ltd.), B. Kim, J. Chang (Samsung Electronics Co., Ltd.), Y. Tak (Samsung Electronics Co. Ltd.), H. Yang, S. Moon, O. Kwon, K. Cho, C. Yoo, and H. Kang (Samsung Electronics Co., Ltd.)
14:20   2475   Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications L. Assaud, M. Hanbücken, and L. Santinacci (CNRS - Aix-Marseille University)
14:40   2476   Impact of Direct Plasma Densification on Resistivity and Conformality of PEALD Tantalum Nitride O. Van der Straten (IBM Research), X. Zhang (Global Foundries), C. Penny, J. Maniscalco (IBM Systems & Technology Group), S. Chiang, J. Ren, and P. Ma (Applied Materials, Inc.)
15:00   2477   Atomic Layer Deposition of Ruthenium in Various Precursor and Oxygen Doses J. Kim, K. Son, B. Kim, W. Kim, and J. Shim (Korea University)
15:20 Intermission (30 Minutes)
 

Reaction Mechanisms II

TimeProgr#Title and Authors
15:50   2478   In Situ FTIR Characterization of Growth Inhibition in Atomic Layer Deposition Using Reversible Surface Functionalization A. Yanguas-Gil, J. A. Libera, and J. W. Elam (Argonne National Laboratory)
16:30   2479   Substrate Reactivity effects in the ALD of Al2O3 Revealed by In Situ ALD M. Tallarida, M. Michling, C. Das, and D. Schmeisser (Brandenburg University of Technology)
16:50   2480   New Reaction Chemistries for Late Transition Metal Atomic Layer Deposition B. Vidjayacoumar, V. Ramalingam, R. Kleinberger, D. J. Emslie (McMaster University), J. Blackwell, and S. Clendenning (Intel Corporation)
17:30 Concluding Remarks (10 Minutes)
 

Kamehameha Exhibit Hall 3, Level 1, Hawaii Convention Center

E2 - Poster Session

TimeProgr#Title and Authors
o   2481   Tungsten Nitride Films Prepared by Cyclic-Pulsed Chemical Vapor Deposition for IC Metallization E. Kim, H. Woo, and D. Kim (Chonnam National University)
o   2482   Highly Uniform Self-Assembled Gold Nanoparticles over High Surface Area ZnO Nanorods as Novel Catalysts T. M. Abdel-Fattah (Christopher Newport University), K. Zhang, W. Cao, and H. Baumgart (Old Dominion University)
o   2483   Characterization of Complex Magnetic Nanotubes K. Pitzschel, J. Bachmann, S. Martens, J. Moreno Montero (University of Hamburg), J. Escrig (Universidad de Santiago de Chile), K. Nielsch, and D. Görlitz (University of Hamburg)
o   2484   Synthesis of VO2 Thin Films by Atomic Layer Deposition with TEMAV as Precursor K. Zhang, M. Tangirala, D. Nminibapiel (Old Dominion University), V. Pallem, C. Dussarrat (American Air Liquide), and H. Baumgart (Old Dominion University)