Honolulu PRiME 2012 - Honolulu, Hawaii

October 7 - October 12, 2012

PROGRAM INFORMATION

 

E3 - Chemical Mechanical Polishing 12

 

Wednesday, October 10, 2012

317B, Level 3, Hawaii Convention Center

CMP Symposium (E3) Day 1

Co-Chairs: Robert Rhoades and Gautam Banerjee
TimeProgr#Title and Authors
08:00 Introductory Comments (30 Minutes)
08:30   2485   Corrosion Inhibition Effect of Organic Additive on Ru Film in Colloidal Silica Based Slurry with Sodium Periodate H. Cui, J. Lim, J. Cho, H. Hwang, J. Park, and J. Park (Hanyang University)
09:10   2486   Electrochemical Characterizations on Chemical Mechanical Polishing Compositions of Polishing Ruthenium Films in CMP Processes T. X. Shi, J. Henry, and J. Schlueter (DA NanoMaterials)
09:30   2487   Brush Scrubbing Scratches Reduction Methods in Post CMP Cleaning H. Soondrum (GlobalFoundries)
09:50 Intermission (20 Minutes)
10:10   2488   Studies on Slurry Design Fundamentals for Advanced CMP Applications G. Basim, A. Karagoz (Ozyegin University), L. Chen, and I. Vakarelski (King Abdullah University of Science and Technology)
10:30   2489   Managing Corrosion during the Chemical Mechanical Polishing (CMP) of Metal Films J. Schlueter, J. Henry, and T. X. Shi (DA NanoMaterials)
10:50   2490   Microstructure and Pattern Size Dependence of Copper Corrosion in Submicron-Scale Features U. Lee, J. Choi, J. Won (Samsung Electronics), H. Lee (Dong-A University), H. Sohn, and T. Kang (Seoul National University)
11:10   2491   Scratching of Patterned Composite Surfaces by Pad Asperities in Chemical-Mechanical Polishing S. Kim, N. Saka, and J. Chun (Massachusetts Institute of Technology)
11:30   2492   Effect of Chelating Agent on Chemical Mechanical Polishing Performance for Polycrystalline Ge2Sb2Te5 Film J. Cho, J. Lim, S. Woo (Hanyang University), E. Hwang (Hynix Semiconductor Inc.), and J. Park (Hanyang University)
11:50 Lunch Break (70 Minutes)
13:00   2493   Metal Oxide Nano Film Characterization for CMP Optimization G. Basim, A. Karagoz, and Z. Ozdemir (Ozyegin University)
13:40   2494   Novel Ru CMP Slurry Using TiO2 Nano Particle as Abrasive and H2O2 as Oxidizer J. Park, H. Cui, J. Lim, J. Jo, H. Hwang, and J. Park (Hanyang University)
14:00   2495   Metal Clearing Process Control in Metal CMP K. Xu, I. Carlsson, T. Liu, S. Shen, B. Swedek, Y. Wang, X. Xia, D. Bennett, W. Tu, and L. Karuppiah (Applied Materials Inc.)
14:20 Intermission (20 Minutes)
14:40   2496   Post-CMP Cleaning of Copper Interconnects at Sub-32nm Technology Node T. Dnyanesh, M. Rao (Air Products & Chemicals), and G. Banerjee (Air Products and Chemicals)
15:00   2497   Effect of Iron(III) Nitrate Concentration on Tungsten Chemical-Mechanical-Polishing Performance J. Lim, J. Cho, H. Hwang, H. Cui, J. Park, and J. Park (Hanyang University)
15:20   2498   Effect of slurry on Vapor Deposition Polymerization (VDP)Chemical Mechanical Planarization (CMP) in Through-Silicon Via (TSV) Applications I. Ali, B. Sapp, R. Quon, S. Kruger (SEMATECH), K. Maekawa, K. Sugita, H. Hashimoto (TEL), M. Stender, J. Dysard (Cabotmicroelectronics), and S. Arkalgud (SEMATECH)
 

Kamehameha Exhibit Hall 3, Level 1, Hawaii Convention Center

E3 - Poster Session

TimeProgr#Title and Authors
o   2499   Effects of Polishing Parameters on the Evolution of 3-D Wafer Pattern during CMP L. Wu (Lanzhou University of Technology)
o   2500   The Step Height Reduction in STI-CMP by Controlling the Adhesion Force between Abrasive and Polishing Pad J. Seo, J. Moon, K. Kim, W. Sigmund, and U. Paik (Hanyang University)
o   2501   Controls of Interactions among Polishing Pad, Abrasive, and Oxide Film by Modification of Polyethyleneimine(PEI) on Under 30nm Ceria Abrasive CMP Slurry J. Moon, J. Bae, K. Park, K. Kim, H. Park, and U. Paik (Hanyang University)
o   2502   Bottom Electrode Surface Treatment effect on MTJ in MRAM Device C. Kim, J. Jung, I. Yoon, B. Yoon, J. Park, and S. Jung (Samsung Electronics Co. Ltd.)
o   2503   Improved Removal Rate in Organic Additive Assisted Ceria Chemical Mechanical Planarization J. Bae, J. Seo, K. Park, J. Moon, H. Park, and U. Paik (Hanyang University)
o   2504   A Modeling Study on the Layout Impact of With-In-Die Thickness Range for STI CMP S. Kincal (Middle East Technical University) and G. Basim (Ozyegin University)
 

Thursday, October 11, 2012

317B, Level 3, Hawaii Convention Center

CMP Symposium (E3) Day 2

Co-Chairs: Bahar Basim and Iqbal Ali
TimeProgr#Title and Authors
08:00   2505   Critical Cu Line Scaling Challenges J. Lu (Micron Technology, Inc.), T. Tran, G. Herdt, N. Petrov, Y. Hu, V. Antonov, D. Collins, P. Murali, Z. Zhang, S. Kondoju, and S. Ireland (Micron Technology Inc.)
08:40   2506  
CANCELLED
Development of SiN CMP Slurry with Selectivity Control Y. Kim, K. Kim, J. Lee, I. Hwang, and S. Nam (Samsung Electronics)
09:00   2507   Investigation of the Slurry for Poly Si Stopping CMP Process Y. Pyon, C. Seong, J. Lim, K. Bae, K. Park, K. Kim, and Y. Shin (Samsung Electronics)
09:20   2508   Combinational effect of Hydroplane and Alkaline Agent on Remaining Particle Reduction for Silicon Wafer Polishing H. Hwang, H. Cui, J. Lim, J. Jo, J. Park (Hanyang University), E. Choi, J. Ahn (LG Siltron), and J. Park (Hanyang University)
09:40 Intermission (20 Minutes)
10:00   2509   Triblogical, Thermal, and Kinetic Attributes of 300 vs. 450 mm Chemical Mechanical Planarization Processes Y. Jiao, X. Liao, C. Wu, Y. Zhuang (University of Arizona), S. Theng (Araca, Inc.), Y. Sampurno (University of Arizona), M. Goldstein (Intel Corporation), and A. Philipossian (University of Arizona)
10:40   2510   Chemical Mechanical Polishing for Extreme Ultraviolet Lithography Mask Substrates A. Hariprasad (Clarkson University), R. Teki (SEMATECH), and S. V. Babu (Clarkson University)
11:00   2511   Effect of CMP Additives on the Agglomeration Rate of Alumina Nanoparticles N. Brahma (University of California) and J. B. Talbot (University of California, San Diego)
11:20   2512   Microreplicated Pad Conditioner for Advanced CMP Applications C. Gould, J. Zabasajja, and D. Le-Huu (3M Company)