Honolulu PRiME 2012 - Honolulu, Hawaii

October 7 - October 12, 2012

PROGRAM INFORMATION

 

E6 - High Purity Silicon 12

 

Monday, October 8, 2012

320, Level 3, Hawaii Convention Center

Keynote

Co-Chairs: E. Simoen
TimeProgr#Title and Authors
08:50 Introductory Remarks (10 Minutes)
09:00   2624   Challenges for the Semiconductor Industry in the 21st Century P. A. Gargini (Intel Corporation)
 

Coffee Break

Co-Chairs:
TimeProgr#Title and Authors
09:40 Intermission (20 Minutes)
 

320, Level 3, Hawaii Convention Center

Crystal Growth

Co-Chairs: R. Falster and G. Kissinger
TimeProgr#Title and Authors
10:00   2625   Si Crystal Growth from a Melt: The Secrets Behind the v/G Criterion J. Vanhellemont (Ghent University)
10:30   2626   FZ Crystal Growth of Si and Ge- Current Limitations and Approaches to Overcome H. Riemann, H. Rost, M. Wuenscher, R. Menzel, and B. Hallmann-Seiffert (Leibniz-Institute for Crystal Growth)
11:00   2627  
CANCELLED
Electrolytic Deposition of Silicon for Solar Application S. Sokhanvaran and M. Barati (University of Toronto)
11:20   2628   A Study on Density Functional Theory of the effect of Pressure on the Formation and Activation Enthalpies of Intrinsic Point Defects in Growing Single Crystal Si K. Sueoka, E. Kamiyama, and H. Kariyazaki (Okayama Pref. University)
11:40   2629   Surface and Gate-Oxide Properties of a Large-Scale, <110>-oriented High-Purity CZ-Si J. Lee, W. Lee, J. Kim, D. Hwang, and H. Kang (LG Siltron)
 

lunch break

Co-Chairs:
TimeProgr#Title and Authors
12:00 Lunch Break (120 Minutes)
 

320, Level 3, Hawaii Convention Center

Doping, Impurities and Point Defects

Co-Chairs: P. Stallhofer and J. Vanhellemont
TimeProgr#Title and Authors
14:00   2630   Schottky Barrier Height Engineering for Low Resistance Contacts to Ge and III-V Devices K. Saraswat, J. Lin, A. Nainani, A. Roy (Stanford University), B. Yang (GlobalFoundries), and Z. Yuan (Stanford University)
14:30   2631   Challenges and Opportunities for Doping Control in Ge for Micro and Optoelectronics Applications E. Bruno (University of Catania), G. Scapellato, E. Napolitani, S. Mirabella, A. La Magna (CNR-IMM), M. Mastromatteo, D. De Salvador (University of Padova), S. Boninelli, G. Fortunato, V. Privitera (CNR-IMM), and F. Priolo (University of Catania)
15:00   2632   Defect Engineering at the Nanoscale: Challenges and Trends E. G. Seebauer (University of Illinois)
15:30   2633   Long-Range Interaction between H and (B or P) Dopant Atoms in Silicon Crystals Investigated by First Principles Calculation E. Kamiyama and K. Sueoka (Okayama Pref. University)
 

Tuesday, October 9, 2012

320, Level 3, Hawaii Convention Center

Advanced Substrates and Characterization

Co-Chairs: J.A. Martino
TimeProgr#Title and Authors
08:10   2634   Manufacturing of Ultra Thin SOI O. Bonnin, W. Schwarzenbach, V. Barec, N. Daval, X. Cauchy, B. Nguyen, and C. Maleville (Soitec)
08:40   2635   Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal --- M. Miyao, M. Kurosawa, K. Toko, and T. Sadoh (Kyushu University)
09:10   2636   The Pseudo-MOSFET: Principles and Recent Trends S. Cristoloveanu, I. Ionica, A. Diab, and F. Liu (IMEP)
 

Coffee Break

Co-Chairs:
TimeProgr#Title and Authors
09:40 Intermission (20 Minutes)
 

320, Level 3, Hawaii Convention Center

Radiation Effects and Characterization

Co-Chairs: S. Cristoloveanu
TimeProgr#Title and Authors
10:00   2637   Interface and Border Traps in Ge pMOSFETs D. Fleetwood (Vanderbilt University), E. Simoen (imec), S. Francis (Air Force Institute of Technology), X. Zhang (Vanderbilt University), R. Arora (Georgia Tech), E. Zhang, R. Schrimpf, K. Galloway (Vanderbilt University), J. Mitard, and C. Claeys (imec)
10:30   2638   Radiation Influence on Biaxial+uniaxial Strained Silicon MuGFETs C. Bordallo (Centro Universitário da FEI), P. G. Agopian, J. A. Martino (University of Sao Paulo), E. Simoen, and C. Claeys (imec)
10:50   2639   Wafer Level Statistical Evaluation of the Proton Radiation Hardness of a High-k Dielectric/Metal Gate 45 nm Bulk CMOS Technology C. Claeys, S. Iacovo (imec), D. Kobayashi (ISAS/JAXA), A. Mercha, A. Griffoni, P. Roussel (imec), F. Crupi (DEIS, University of Calabria), and E. Simoen (imec)
11:10   2640   Transistor-Based Extraction of Carrier Lifetime and Interface Traps in Silicon-on-Insulator Materials J. A. Martino (University of Sao Paulo), V. Sonnenberg (FATEC/SP), M. Galeti (University of Sao Paulo), M. Aoulaiche, E. Simoen, and C. Claeys (imec)
11:40   2641   Physical Mechanisms of Charge Pumping and DCIV Currents in Floating-Body SOI MOSFETs E. Zhang, D. Fleetwood, R. Schrimpf (Vanderbilt University), E. Simoen, and D. Linten (imec)
 

Lunch Break

Co-Chairs:
TimeProgr#Title and Authors
12:00 Lunch Break (120 Minutes)
 

320, Level 3, Hawaii Convention Center

Oxygen-, Hydrogen-related Defects and Their Characterization

Co-Chairs: R. Job and J. Murphy
TimeProgr#Title and Authors
14:00   2642   Lifetime-Degrading Boron-Oxygen Centres in p-types and n-type Silicon V. Voronkov, R. Falster (MEMC Electronic Materials), B. Lim, and J. Schmidt (ISFH)
14:30   2643   Impact of Oxide Precipitates on Minority Carrier Lifetime in Silicon J. D. Murphy (University of Oxford), K. Bothe, R. Krain (Institut für Solarenergieforschung Hameln/Emmerthal), M. Olmo, V. Voronkov, and R. Falster (MEMC Electronic Materials)
15:00   2644   Comparison of the Impact of Thermal Treatments on the Second and on the Millisecond Scales on the Precipitation of Interstitial Oxygen G. Kissinger, D. Kot (IHP), and W. Von Ammon (Siltronic AG)
 

Coffee Break

Co-Chairs:
TimeProgr#Title and Authors
15:20 Intermission (20 Minutes)
 

320, Level 3, Hawaii Convention Center

Point Defects in Si and Ge

Co-Chairs: R. Job and J. Murphy
TimeProgr#Title and Authors
15:40   2645   Thermal Budget of Hydrogen-Related Donor Profiles - Diffusion Limited Activation and Thermal Dissociation J. Laven (Infineon Technologies AG), R. Job (Muenster University of Applied Sciences), H. Schulze, F. Niedernostheide (Infineon Technologies AG), W. Schustereder (Infineon Technologies Austria AG), and L. Frey (University of Erlangen-Nuremberg)
16:10   2646   Difficulties in Characterizing High-Resistivity Silicon P. Nayak, R. Richert, and D. Schroder (Arizona State University)
16:30   2647   Investigation of Doping Type Conversion of Hydrogen Implanted Cz-Silicon by EBIC S. Kirnstoetter, M. Faccinelli, P. Hadley (Graz University of Technology), J. Laven, H. Schulze (Infineon Technologies AG), R. Job (Muenster University of Applied Sciences), and W. Schustereder (Infineon Technologies Austria AG)
16:50   2648   Characterization of Deep Levels Introduced by RTA and by Subsequent Anneals in n-Type Silicon D. Kot (IHP), T. Mchedlidze (TU Dresden), G. Kissinger (IHP), and W. Von Ammon (Siltronic AG)
17:10   2649   Deep-Level Transient Spectroscopy of MOS Capacitors on GeSn Epitaxial Layers E. Simoen, B. Vincent, C. Merckling, F. Gencarelli (Imec), L. Chu (National Tsing Hua University), and R. Loo (imec)
 

Kamehameha Exhibit Hall 3, Level 1, Hawaii Convention Center

E6 - Poster Session

Co-Chairs:
TimeProgr#Title and Authors
o   2650   Low Temperature Fluorinated Silicon Film Synthesis D. E. Milovzorov (Fluens Technology Group Ltd)
o   2651   Chemical Vapor Deposition of Silicon by the Reaction of Bromosilanes and Hydrogen K. Tomono, H. Furuya, S. Miyamoto, T. Ogawa, Y. Okamura, R. Komatsu, and M. Nakayama (Yamaguchi University)
o   2652   Diode Characteristics and Thermal Donor Formation in Germanium-Doped Silicon Substrates J. Rafi (Institut de Microelectrònica de Barcelona (IMB-CNM-CSIC)), J. Vanhellemont (Ghent University), E. Simoen (imec), J. Chen (State Key Laboratory of Silicon Materials), M. Zabala (Institut de Microelectrònica de Barcelona (CNM-CSIC)), and D. Yang (State Key Laboratory of Silicon Materials)
 

Wednesday, October 10, 2012

320, Level 3, Hawaii Convention Center

Materials Issues in ULSI Processing

Co-Chairs: C. Claeys
TimeProgr#Title and Authors
08:30   2653   Introduction of New Materials into CMOS Devices H. Iwai (Tokyo Institute of Technology)
09:10   2654   Cu Contamination Assessment and Control in 3-D Integration M. Koyanagi, K. Lee, J. Bea, T. Fukushima, and T. Tanaka (Tohoku University)
 

Coffee Break

Co-Chairs:
TimeProgr#Title and Authors
09:40 Intermission (20 Minutes)
 

320, Level 3, Hawaii Convention Center

Gettering and Defects in Circuits and Devices

Co-Chairs: M. Koyanagi and E. Simoen
TimeProgr#Title and Authors
10:00   2655   Modeling of Boron and Phosphorus Diffusion Gettering of Iron in Silicon A. Haarahiltunen, V. Vähänissi, H. Talvitie, M. Yli-Koski, and H. Savin (Aalto University)
10:30   2656   Defect Generation in Device Processing and Impact on the Electrical Performances M. Polignano, I. Mica, G. Carnevale, A. Mauri (Micron Semiconductor Italia S.r.l.), E. Bonera (Universita' degli studi di Milano-Bicocca), and S. Speranza (Cabot Microelectronic)
11:00   2657   Segregation Behavior of Copper and Tantalum in Oxide Film and Si Substrate after Device Heat-treatment I. Lee, S. Baek, G. Lee, U. Paik, and J. Park (Hanyang University)
11:20   2658   The Characteristics of Gettering Ability in Advanced Multi-Chip Packaging Thinned Wafer J. An (SK Hynix), J. Kim, J. Kim, K. Lee, H. Kang (LG Siltron), S. Lee, B. Moon, Y. Shin, S. Hwang, and H. Park (SK Hynix)
11:40   2659  
CANCELLED
Effects of Slow Diffusivity Metallic Contaminant on Electrical Characteristic Degradation for Silicon C-MOS Image Sensor G. Lee, I. Lee, S. Baek, I. Kim, and J. Park (Hanyang University)
12:00 Concluding Remarks (10 Minutes)