Honolulu PRiME 2012 - Honolulu, Hawaii | ||
October 7 - October 12, 2012 | ||
PROGRAM INFORMATION | ||
E6 - High Purity Silicon 12 | ||
Monday, October 8, 2012 | ||
320, Level 3, Hawaii Convention Center | ||
Keynote | ||
Co-Chairs: E. Simoen | ||
| Time | Progr# | Title and Authors |
|---|---|---|
| 08:50 | Introductory Remarks (10 Minutes) | |
| 09:00 | 2624 | Challenges for the Semiconductor Industry in the 21st Century P. A. Gargini (Intel Corporation) |
Coffee Break | ||
Co-Chairs: | ||
| Time | Progr# | Title and Authors |
| 09:40 | Intermission (20 Minutes) | |
320, Level 3, Hawaii Convention Center | ||
Crystal Growth | ||
Co-Chairs: R. Falster and G. Kissinger | ||
| Time | Progr# | Title and Authors |
| 10:00 | 2625 | Si Crystal Growth from a Melt: The Secrets Behind the v/G Criterion J. Vanhellemont (Ghent University) |
| 10:30 | 2626 | FZ Crystal Growth of Si and Ge- Current Limitations and Approaches to Overcome H. Riemann, H. Rost, M. Wuenscher, R. Menzel, and B. Hallmann-Seiffert (Leibniz-Institute for Crystal Growth) |
| 11:00 | 2627 | CANCELLED
Electrolytic Deposition of Silicon for Solar Application
S. Sokhanvaran and M. Barati (University of Toronto)
|
| 11:20 | 2628 | A Study on Density Functional Theory of the effect of Pressure on the Formation and Activation Enthalpies of Intrinsic Point Defects in Growing Single Crystal Si K. Sueoka, E. Kamiyama, and H. Kariyazaki (Okayama Pref. University) |
| 11:40 | 2629 | Surface and Gate-Oxide Properties of a Large-Scale, <110>-oriented High-Purity CZ-Si J. Lee, W. Lee, J. Kim, D. Hwang, and H. Kang (LG Siltron) |
lunch break | ||
Co-Chairs: | ||
| Time | Progr# | Title and Authors |
| 12:00 | Lunch Break (120 Minutes) | |
320, Level 3, Hawaii Convention Center | ||
Doping, Impurities and Point Defects | ||
Co-Chairs: P. Stallhofer and J. Vanhellemont | ||
| Time | Progr# | Title and Authors |
| 14:00 | 2630 | Schottky Barrier Height Engineering for Low Resistance Contacts to Ge and III-V Devices K. Saraswat, J. Lin, A. Nainani, A. Roy (Stanford University), B. Yang (GlobalFoundries), and Z. Yuan (Stanford University) |
| 14:30 | 2631 | Challenges and Opportunities for Doping Control in Ge for Micro and Optoelectronics Applications E. Bruno (University of Catania), G. Scapellato, E. Napolitani, S. Mirabella, A. La Magna (CNR-IMM), M. Mastromatteo, D. De Salvador (University of Padova), S. Boninelli, G. Fortunato, V. Privitera (CNR-IMM), and F. Priolo (University of Catania) |
| 15:00 | 2632 | Defect Engineering at the Nanoscale: Challenges and Trends E. G. Seebauer (University of Illinois) |
| 15:30 | 2633 | Long-Range Interaction between H and (B or P) Dopant Atoms in Silicon Crystals Investigated by First Principles Calculation E. Kamiyama and K. Sueoka (Okayama Pref. University) |
Tuesday, October 9, 2012 | ||
320, Level 3, Hawaii Convention Center | ||
Advanced Substrates and Characterization | ||
Co-Chairs: J.A. Martino | ||
| Time | Progr# | Title and Authors |
| 08:10 | 2634 | Manufacturing of Ultra Thin SOI O. Bonnin, W. Schwarzenbach, V. Barec, N. Daval, X. Cauchy, B. Nguyen, and C. Maleville (Soitec) |
| 08:40 | 2635 | Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal --- M. Miyao, M. Kurosawa, K. Toko, and T. Sadoh (Kyushu University) |
| 09:10 | 2636 | The Pseudo-MOSFET: Principles and Recent Trends S. Cristoloveanu, I. Ionica, A. Diab, and F. Liu (IMEP) |
Coffee Break | ||
Co-Chairs: | ||
| Time | Progr# | Title and Authors |
| 09:40 | Intermission (20 Minutes) | |
320, Level 3, Hawaii Convention Center | ||
Radiation Effects and Characterization | ||
Co-Chairs: S. Cristoloveanu | ||
| Time | Progr# | Title and Authors |
| 10:00 | 2637 | Interface and Border Traps in Ge pMOSFETs D. Fleetwood (Vanderbilt University), E. Simoen (imec), S. Francis (Air Force Institute of Technology), X. Zhang (Vanderbilt University), R. Arora (Georgia Tech), E. Zhang, R. Schrimpf, K. Galloway (Vanderbilt University), J. Mitard, and C. Claeys (imec) |
| 10:30 | 2638 | Radiation Influence on Biaxial+uniaxial Strained Silicon MuGFETs C. Bordallo (Centro Universitário da FEI), P. G. Agopian, J. A. Martino (University of Sao Paulo), E. Simoen, and C. Claeys (imec) |
| 10:50 | 2639 | Wafer Level Statistical Evaluation of the Proton Radiation Hardness of a High-k Dielectric/Metal Gate 45 nm Bulk CMOS Technology C. Claeys, S. Iacovo (imec), D. Kobayashi (ISAS/JAXA), A. Mercha, A. Griffoni, P. Roussel (imec), F. Crupi (DEIS, University of Calabria), and E. Simoen (imec) |
| 11:10 | 2640 | Transistor-Based Extraction of Carrier Lifetime and Interface Traps in Silicon-on-Insulator Materials J. A. Martino (University of Sao Paulo), V. Sonnenberg (FATEC/SP), M. Galeti (University of Sao Paulo), M. Aoulaiche, E. Simoen, and C. Claeys (imec) |
| 11:40 | 2641 | Physical Mechanisms of Charge Pumping and DCIV Currents in Floating-Body SOI MOSFETs E. Zhang, D. Fleetwood, R. Schrimpf (Vanderbilt University), E. Simoen, and D. Linten (imec) |
Lunch Break | ||
Co-Chairs: | ||
| Time | Progr# | Title and Authors |
| 12:00 | Lunch Break (120 Minutes) | |
320, Level 3, Hawaii Convention Center | ||
Oxygen-, Hydrogen-related Defects and Their Characterization | ||
Co-Chairs: R. Job and J. Murphy | ||
| Time | Progr# | Title and Authors |
| 14:00 | 2642 | Lifetime-Degrading Boron-Oxygen Centres in p-types and n-type Silicon V. Voronkov, R. Falster (MEMC Electronic Materials), B. Lim, and J. Schmidt (ISFH) |
| 14:30 | 2643 | Impact of Oxide Precipitates on Minority Carrier Lifetime in Silicon J. D. Murphy (University of Oxford), K. Bothe, R. Krain (Institut für Solarenergieforschung Hameln/Emmerthal), M. Olmo, V. Voronkov, and R. Falster (MEMC Electronic Materials) |
| 15:00 | 2644 | Comparison of the Impact of Thermal Treatments on the Second and on the Millisecond Scales on the Precipitation of Interstitial Oxygen G. Kissinger, D. Kot (IHP), and W. Von Ammon (Siltronic AG) |
Coffee Break | ||
Co-Chairs: | ||
| Time | Progr# | Title and Authors |
| 15:20 | Intermission (20 Minutes) | |
320, Level 3, Hawaii Convention Center | ||
Point Defects in Si and Ge | ||
Co-Chairs: R. Job and J. Murphy | ||
| Time | Progr# | Title and Authors |
| 15:40 | 2645 | Thermal Budget of Hydrogen-Related Donor Profiles - Diffusion Limited Activation and Thermal Dissociation J. Laven (Infineon Technologies AG), R. Job (Muenster University of Applied Sciences), H. Schulze, F. Niedernostheide (Infineon Technologies AG), W. Schustereder (Infineon Technologies Austria AG), and L. Frey (University of Erlangen-Nuremberg) |
| 16:10 | 2646 | Difficulties in Characterizing High-Resistivity Silicon P. Nayak, R. Richert, and D. Schroder (Arizona State University) |
| 16:30 | 2647 | Investigation of Doping Type Conversion of Hydrogen Implanted Cz-Silicon by EBIC S. Kirnstoetter, M. Faccinelli, P. Hadley (Graz University of Technology), J. Laven, H. Schulze (Infineon Technologies AG), R. Job (Muenster University of Applied Sciences), and W. Schustereder (Infineon Technologies Austria AG) |
| 16:50 | 2648 | Characterization of Deep Levels Introduced by RTA and by Subsequent Anneals in n-Type Silicon D. Kot (IHP), T. Mchedlidze (TU Dresden), G. Kissinger (IHP), and W. Von Ammon (Siltronic AG) |
| 17:10 | 2649 | Deep-Level Transient Spectroscopy of MOS Capacitors on GeSn Epitaxial Layers E. Simoen, B. Vincent, C. Merckling, F. Gencarelli (Imec), L. Chu (National Tsing Hua University), and R. Loo (imec) |
Kamehameha Exhibit Hall 3, Level 1, Hawaii Convention Center | ||
E6 - Poster Session | ||
Co-Chairs: | ||
| Time | Progr# | Title and Authors |
| o | 2650 | Low Temperature Fluorinated Silicon Film Synthesis D. E. Milovzorov (Fluens Technology Group Ltd) |
| o | 2651 | Chemical Vapor Deposition of Silicon by the Reaction of Bromosilanes and Hydrogen K. Tomono, H. Furuya, S. Miyamoto, T. Ogawa, Y. Okamura, R. Komatsu, and M. Nakayama (Yamaguchi University) |
| o | 2652 | Diode Characteristics and Thermal Donor Formation in Germanium-Doped Silicon Substrates J. Rafi (Institut de Microelectrònica de Barcelona (IMB-CNM-CSIC)), J. Vanhellemont (Ghent University), E. Simoen (imec), J. Chen (State Key Laboratory of Silicon Materials), M. Zabala (Institut de Microelectrònica de Barcelona (CNM-CSIC)), and D. Yang (State Key Laboratory of Silicon Materials) |
Wednesday, October 10, 2012 | ||
320, Level 3, Hawaii Convention Center | ||
Materials Issues in ULSI Processing | ||
Co-Chairs: C. Claeys | ||
| Time | Progr# | Title and Authors |
| 08:30 | 2653 | Introduction of New Materials into CMOS Devices H. Iwai (Tokyo Institute of Technology) |
| 09:10 | 2654 | Cu Contamination Assessment and Control in 3-D Integration M. Koyanagi, K. Lee, J. Bea, T. Fukushima, and T. Tanaka (Tohoku University) |
Coffee Break | ||
Co-Chairs: | ||
| Time | Progr# | Title and Authors |
| 09:40 | Intermission (20 Minutes) | |
320, Level 3, Hawaii Convention Center | ||
Gettering and Defects in Circuits and Devices | ||
Co-Chairs: M. Koyanagi and E. Simoen | ||
| Time | Progr# | Title and Authors |
| 10:00 | 2655 | Modeling of Boron and Phosphorus Diffusion Gettering of Iron in Silicon A. Haarahiltunen, V. Vähänissi, H. Talvitie, M. Yli-Koski, and H. Savin (Aalto University) |
| 10:30 | 2656 | Defect Generation in Device Processing and Impact on the Electrical Performances M. Polignano, I. Mica, G. Carnevale, A. Mauri (Micron Semiconductor Italia S.r.l.), E. Bonera (Universita' degli studi di Milano-Bicocca), and S. Speranza (Cabot Microelectronic) |
| 11:00 | 2657 | Segregation Behavior of Copper and Tantalum in Oxide Film and Si Substrate after Device Heat-treatment I. Lee, S. Baek, G. Lee, U. Paik, and J. Park (Hanyang University) |
| 11:20 | 2658 | The Characteristics of Gettering Ability in Advanced Multi-Chip Packaging Thinned Wafer J. An (SK Hynix), J. Kim, J. Kim, K. Lee, H. Kang (LG Siltron), S. Lee, B. Moon, Y. Shin, S. Hwang, and H. Park (SK Hynix) |
| 11:40 | 2659 | CANCELLED
Effects of Slow Diffusivity Metallic Contaminant on Electrical Characteristic Degradation for Silicon C-MOS Image Sensor
G. Lee, I. Lee, S. Baek, I. Kim, and J. Park (Hanyang University)
|
| 12:00 | Concluding Remarks (10 Minutes) | |