To recognize the innovative research gaining attention across the diverse span of its topical interest areas, the Society highlights the top five most-read journal articles in each area during each quarter of the year.
The most-read ECS Journal of Solid State Science and Technology articles by topical interest area during the first quarter of 2019 (January through March) are listed below.
Highlights are based on articles published since January 1, 2017.
ALL of the articles listed below are open access.
Carbon Nanostructures and Devices
- Review—The Beautiful Molecule: 30 Years of C60 and Its Derivatives | Steve F. A. Acquah, Anastasia V. Penkova, Denis A. Markelov, Anna S. Semisalova, Branden E. Leonhardt, and James M. Magi
- Review—Critical Considerations of High Quality Graphene Synthesized by Plasma-Enhanced Chemical Vapor Deposition for Electronic and Energy Storage Devices | Mohd Asyadi Azam, Nor Najihah Zulkapli, Norasimah Dorah, Raja Noor Amalina Raja Seman, Mohd Hanafi Ani, Mohd Shukri Sirat, Edhuan Ismail, Fatin Bazilah Fauzi, Mohd Ambri Mohamed, and Burhanuddin Yeop Majlis
- Facile Synthesis and Characterization of Reduced Graphene Oxide Produced with Green and Conventional Reductants | Nada Sami Ahmed, Orchidah Azizi, Arik El-Boher, John Gahl, and Sangho Bok
- Investigation of the Electrical Properties of Polymer/Carbon Composites Exposed to Joule Heating and Heat Treatment | Reza Taherian and Mohammad Matboo Ghorbani
- A Sensor Based on Au Nanoparticles/Carbon Nitride/Graphene Composites for the Detection of Chloramphenicol and Ciprofloxacin | Yuehuan Yuan, Feifei Zhang, Haiyan Wang, Linna Gao, and Zonghua Wang
Dielectric Science and Materials
- Capacitance Stability in Polymer Tantalum Capacitors with PEDOT Counter Electrodes | Y. Freeman, I. Luzinov, R. Burtovyy, P. Lessner, W. R. Harrell, S. Chinnam, and J. Qazi
- Review—Organic Materials for Thermoelectric Energy Generation | Lewis M. Cowen, Jonathan Atoyo, Matthew J. Carnie, Derya Baran, and Bob C. Schroeder
- Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-k Dielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride | John T. Gaskins, Patrick E. Hopkins, Devin R. Merrill, Sage R. Bauers, Erik Hadland, David C. Johnson, Donghyi Koh, Jung Hwan Yum, Sanjay Banerjee, Bradley J. Nordell, Michelle M. Paquette, Anthony N. Caruso, William A. Lanford, Patrick Henry, Liza Ross, Han Li, Liyi Li, Marc French, Antonio M. Rudolph, and Sean W. King
- Review—Towards the Next Generation of Thermoelectric Materials: Tailoring Electronic and Phononic Properties of Nanomaterials | Olga Caballero-Calero and Roberto D’Agosta
- Review—Micro and Nano-Engineering Enabled New Generation of Thermoelectric Generator Devices and Applications | Jhonathan P. Rojas, Devendra Singh, Salman B. Inayat, Galo A. Torres Sevilla, Hossain M. Fahad, and Muhammad M. Hussain
Electronic Materials and Processing
- Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications | Alain E. Kaloyeros, Fernando A. Jové, Jonathan Goff, and Barry Arkles
- Perspective—Opportunities and Future Directions for Ga2O3 | Michael A. Mastro, Akito Kuramata, Jacob Calkins, Jihyun Kim, Fan Ren, and S. J. Pearton
- Unraveling Slurry Chemistry/Nanoparticle/Polymeric Membrane Adsorption Relevant to Cu Chemical Mechanical Planarization (CMP) Filtration Applications | T. B. Zubi, R. A. Wiencek, A. L. Mlynarski, J. M. Truffa, K. M. Wortman-Otto, C. Saucedo, M. G. Salinas, C. F. Graverson, and J. J. Keleher
- Post Cleaning for FEOL CMP with Silica and Ceria Slurries | Wei-Tsu Tseng, Changhong Wu, Tim McCormack, and Ji Chul Yang
- Editors’ Choice—Review—Cobalt Thin Films: Trends in Processing Technologies and Emerging Applications | Alain E. Kaloyeros, Youlin Pan, Jonathan Goff, and Barry Arkles
Electronic and Photonic Devices and Systems
- Review—Field-Effect Transistor Biosensing: Devices and Clinical Applications | Yu-Cheng Syu, Wei-En Hsu, and Chih-Ting Lin
- Editors’ Choice—Review—In Vivo and In Vitro Microneedle Based Enzymatic and Non-Enzymatic Continuous Glucose Monitoring Biosensors | Somasekhar R. Chinnadayyala, Ki Deok Park, and Sungbo Cho
- Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency | Jae-Seong Park, Jong Kyu Kim, Jaehee Cho, and Tae-Yeon Seong
- Review—RF Sputtered Films of Ga2O3 | Ashwin Kumar Saikumar, Shraddha Dhanraj Nehate, and Kalpathy B Sundaram
- Defect States Determining Dynamic Trapping-Detrapping in β-Ga2O3 Field-Effect Transistors | Alexander Y. Polyakov, Nikolai B. Smirnov, Ivan V. Shchemerov, Sergey V. Chernykh, Sooyeoun Oh, Stephen J. Pearton, Fan Ren, Anastasia Kochkova, and Jihyun Kim
Luminescence and Display Materials, Devices, and Processing
- Review—Synthesis, Luminescent Properties, and Stabilities of Cesium Lead Halide Perovskite Nanocrystals | Yoshiki Iso and Tetsuhiko Isobe
- Review—Phosphor Plates for High-Power LED Applications: Challenges and Opportunities toward Perfect Lighting | Yoon Hwa Kim, Noolu S. M. Viswanath, Sanjith Unithrattil, Ha Jun Kim, and Won Bin Im
- Review—Light Emission from Thin Film Solar Cell Materials: An Emerging Infrared and Visible Light Emitter | Yoshihiko Kanemitsu, Makoto Okano, Le Quang Phuong, and Yasuhiro Yamada
- Critical Review—Narrow-Band Nitride Phosphors for Wide Color-Gamut White LED Backlighting | Shuxing Li, Rong-Jun Xie, Takashi Takeda, and Naoto Hirosaki
- Critical Review—Narrow-Band Emission of Nitride Phosphors for Light-Emitting Diodes: Perspectives and Opportunities | Julius L. Leaño, Jr., Mu-Huai Fang, and Ru-Shi Liu
Cross Disciplinary
- Device Characteristics of AlGaN/GaN HEMTs with p-GaN Cap Layer | Chih-Hao Li, Yan-Cheng Jiang, Hsin-Chang Tsai, Yi-Nan Zhong, and Yue-ming Hsin
- Simulation of Deep-Level Trap Distributions in AlGaN/GaN HEMTs and Its Influence on Transient Analysis of Drain Current | S. Mukherjee, E. E. Patrick, and M. E. Law
- Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate | S. J. Duffy, B. Benbakhti, M. Mattalah, W. Zhang, M. Bouchilaoun, M. Boucherta, K. Kalna, N. Bourzgui, H. Maher, and A. Soltani
- Effects of Gamma Irradiation on AlGaN-Based High Electron Mobility Transistors | Jonathan Lee, Elena Flitsiyan, Leonid Chernyak, Joseph Salzman, and Boris Meyler
- Planar Ohmic Contacts to Al45Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistors | B. A. Klein, A. G. Baca, A. M. Armstrong, A. A. Allerman, C. A. Sanchez, E. A. Douglas, M. H. Crawford, M. A. Miller, P. G. Kotula, T. R. Fortune, and V. M. Abate
