Co-Chairs: D.J. Lockwood and P. Schmuki
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | Introductory Remarks | ||
| 10:05 | 393 | Quo Vadis Porous Semiconductors? - L. Canham (DERA Malvern) | |
| 10:40 | 394 | Mechanistic Aspects of Nucleation and Growth of Corrosion Pits on Metals - H.-H. Strehblow (Heinrich-Heine-Universitat Dusseldorf) | |
| 11:15 | 395 | A Stochastic Model for Current Oscillations in Space and Time at the Silicon Electrode - H. Foell, J. Carstensen, M. Christophersen, and G. Hasse (University of Kiel) | |
| 11:40 | 396 | The Early Stage of Localized Corrosion - H. Boehni (Swiss Federal Institute of Technology Zuerich) |
Co-Chairs: H.S. Isaacs and Y. Ogata
| Time | Abs# | Title | View |
|---|---|---|---|
| 1:30 | 397 | New Findings in the Pore Formation on Silicon - V. Parkhutik (Technical University of Valencia) | |
| 1:55 | 398 | Electrochemical Investigations of Pitting Events at Different Temperatures by Current Transients Analysis - S. Matsch and H. Boehni (Swiss Federal Institute of Technology) | |
| 2:15 | 399 | Initial Stages of Etching of Si Electrode Surfaces Investigated by Surface Infrared Spectroscopy - M. Niwano (Tohoku University) | |
| 2:35 | 400 | Pitting Corrosion of Stainless Steels : Modelling the Relative Effect of Passive Films and Sulfide Inclusions - B. Baroux (Institut National Polytechnique de Grenoble) | |
| 2:55 | 401 | Solution Chemistry Effects on Stable and Metastable Pitting Corrosion of Fe-Cr Alloys - S. Virtanen and W. Tobler (Swiss Federal Institute of Technology (ETH)) | |
| 3:15 | 402 | The Distribution of Pitting Potentials for Stainless Steels - N. Laycock (Materials Performance Technologies), S. White, and D. Krouse (Industrial Research) | |
| 3:35 | 403 | Interactions Among Localized Corrosion Sites - T. Lunt, J. Scully, V. Brusamarello (University of Virginia), A. Mikhailov (Fritz-Haber-Institut der Max-Planck-Gesellschaft), and J. Hudson (University of Virginia) | |
| 3:55 | Fifteen-Minute Intermission | ||
| 4:10 | 404 | Formation, Stability, and Dissolution of Low-Dimensional Systems - W.J. Lorenz, W. Wiesbeck (University of Karlsruhe), and G. Staikov (University of Dusseldorf) | |
| 4:30 | 405 | Theoretical Interpretation of Anion Size Effects in Passivity Breakdown - D. Macdonald (Pennsylvania State University) | |
| 4:50 | 406 | A Monte Carlo Simulation of the Pit Growth - B. Malki and B. Baroux (INPG-LTPCM) | |
| 5:10 | 407 | Electrochemical Properties of Fe2O3-Cr2O3 Artificial Passivation Films in A HCl Solutions - K. Sugimoto, M. Son, N. Akao, and N. Hara (Tohoku University) | |
| 5:30 | 408 | Extended 2D-Defects of the Surface Silicon Layer and the Charged Point Defects Generation Processes in the Silicon Dioxide Layer of Si–SiO2 Structures During Thermal Oxidation - V.Y. Uritsky (St.-Petersburg State Electrotechnical University) |
Co-Chairs: L. Canham and M. Seo
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:30 | 409 | Electrochemically-Prepared Highly-Ordered High-Aspect-Ratio Pore Arrays - R. Wehrspohn, A. Birner, F. Muller, K. Nielsch, J. Schilling, and U. Goesele (Max-Planck-Institute of Microstructure Physics) | |
| 8:55 | 410 | Electrochemical Pathways to Nanostructures - M. Moskovits, K. Shelimov, D. Almawlawi, A. Osika, and D. Davydov (University of Toronto) | |
| 9:20 | 411 | Electrochemical Deposition of Macroporous Materials Using Polystyrene Latex Sphere Templates and Their Optical Properties - M.A. Ghanem, P.N. Bartlett, and P.R. Birkin (University of Southampton) | |
| 9:40 | 412 | AFM Induced Nanopatterning of Si Surfaces - L. Santinacci, T. Djenizian, and P. Schmuki (Swiss Federal Institute of Technology (EPFL)) | |
| 10:00 | 413 | Electron-Beam Induced Nanomasking for Metal Electrodeposition on Semiconductor Surfaces - T. Djenizian, L. Santinacci, and P. Schmuki (Swiss Federal Institute of Technology (EPFL)) | |
| 10:20 | Fifteen-Minute Intermission | ||
| 10:45 | 414 | Fabrication of Grooves on Aluminum Surface with Atomic Force Microscope Probe - H. Takahashi, Z. Kato, and M. Sakairi (Hokkaido University) | |
| 11:10 | 415 | Formation of Metal Oxide Nanotubes through a Surfactant-Mediated Method in Laurylamine / Metal Alkoxide System - M. Adachi, Y. Murata, and M. Harada (Kyoto University) | |
| 11:30 | 416 | Fabrication of Pits and Grooves on Aluminum by Laser Irradiation and Electrochemistry - T. Kikuchi, M. Sakairi, H. Takahashi (Hokkaido University), Y. Abe, and N. Katayama (Hokkaido Industrial Research Institute) | |
| 11:50 | 417 | Self Assembly of Porous Silicon Layers - G. Di Francia, V. La Ferrara, L. Lancellotti, and P. Morvillo (CR-ENEA) |
Co-Chairs: H. Foell and H. Takahashi
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:35 | 418 | Fundamental Aspects of Alloy Dissolution - K. Sieradzki, N. Dimitrov, and N. Vasiljevic (Arizona State University) | |
| 3:00 | 419 | Characterization and Formation of Nanoporous Metals by Dealloying - S. Corcoran (Virginia Tech) | |
| 3:20 | 420 | Electrochemical Behaviour of Nanocrystalline, Porous Nickel - M. Schneider and H. Worsch (Dresden University of Technology) | |
| 3:40 | Fifteen-Minute Intermission | ||
| 3:55 | 421 | Oxide Growth in Aluminum Etch Tunnels - R. Alwitt (Boundary Technologies, Inc.) and H. Uchi (Chemi-con Materials Corp.) | |
| 4:20 | 422 | Modeling the Shapes of Aluminum Etch Tunnels - K. Hebert (Iowa State University) | |
| 4:40 | 423 | Electrolytic Cathodic Breakdown in Porous Alumina - V.V. Konovalov, R.M. Metzger, and G.W. Warren (University of Alabama) | |
| 5:00 | 424 | Anodizing of Aluminum in Acid NbO-Oxalate Solutions - N.R. Atz, L.F. Pinheiro Dick (Universidade Federal do Rio Grande do Sul), and H.P. Strunk (Universitat Erlangen) | |
| 5:20 | 425 | Stages of Anodic Oxide Film Growth on Titanium - Y. Mueller and S. Virtanen (Swiss Federal Institute of Technology) | |
| 5:40 | 426 | A New Technology of Selaing Treatment for Passivated Porous Surface - C.K. Zhong (Guangzhou Research Institute of Electric Apparatus) |
Co-Chairs: S. Virtanen and N. Laycock
| Time | Abs# | Title | View |
|---|---|---|---|
| o | 427 | Influence of Polarization Scan Rate on the Pitting Potential of AISI 316L Stainless Steel in NaCl Solution - J.M. Bastidas, C.L. Torres, J.L. Polo, and E. Cano (National Center for Metallurgical Research (CSIC)) | |
| o | 428 | Electrical Properties of Porous Silicon at the Metallization of Pores - O. Bomk, V. Ilchenko, G. Kuznetsov, A. Tsiganova, T. Vdovenkova, and V. Skryshevsky (Kyiv Shevchenko University) | |
| o | 429 | Some Causes for the Localized of Metal Dissolution and Possibilities of Passivation of Porous Surface - Y. Kuznetsov (Institute of Phisical Chemistry of RAS), M. Rylkina (Udmurt State University), and D. Vershok (Institute of Phisical Chemistry of RAS) | |
| o | 430 | Pores Formation and Surface Passivation in Electroless Gold and Tin Films - R. Ann, R. Olga (Physical and Chemical Problems Research Institute), V. Tatyana, and S. Vadim (Belorussian State University) | |
| o | 431 | Impedance Spectroscopy in the Si-HF System Including Time Dependent and Resonant Phenomena - G. Hasse, J. Carstensen, and H. Foell (University of Kiel) | |
| o | 432 | Formation of Porous Composites by a Voltage Pulse Technique - M.-G. Verge and P. Schmuki (EPFL) | |
| o | 433 | Determination of Aluminum Surface Oxide Film Geometry From Electrochemical Transient Measurements - H. Wu and K. Hebert (Iowa State University) | |
| o | 434 | 1- Photoluminescence Study of Nanocomposites Based Porous Silicon 2- Resonantly Excited Photoluminescence from Porous Silicon: Effect of Polarisation and Temperature - H. Elhouichet (Laboratoire de Spectroscopie Raman) | |
| o | 435 | Preparation and Study the Transport Properties of Composite Material - LiJO3 + SiO2 - I. Kholmanov, A. Aliev, N. Akhmedjanova, and V. Krivorotov (Uzbek Academy of Sciences) | |
| o | 436 | Microspectrometer of Porous Silicon - G. Lammel, P. Schmuki, and P. Renaud (Swiss Federal Institute of Technology Lausanne (EPFL)) | |
| o | 437 | A Cellular Automata Simulation of the Pit Growth - B. Malki and B. Baroux (INPG-LTPCM) |
Co-Chairs: M. Moskovits and T. Yonehara
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 438 | ELTRAN(R); SOI-Epi WaferTM by Epitaxial Layer Transfer from Porous Si - T. Yonehara and K. Sakaguchi (Canon Inc.) | |
| 10:25 | 439 | Mechanism of Pore-Enlargement in Double Porous Si Layers - K. Sakaguchi, H. Kurisu, K. Ohmi, and T. Yonehara (Canon Inc.) | |
| 10:45 | 440 | Novel Ultrasonic Technology by Nanocrystalline Porous Silicon - N. Koshida, T. Migita, Y. Kishimoto, and H. Shinoda (Tokyo University of A&T) | |
| 11:10 | 441 | Electrodeposited Hard Magnetic Nanowires with Anodized Aluminum - N. Myung, D.-Y. Park, M. Schwartz, and K. Nobe (Univeristy of California, Los Angeles) | |
| 11:30 | 442 | Modelling of Electrodeposition of Copper in a Pore in CuCN-KCN Solutions - A. Katagiri (Kyoto University) | GIF |
| 11:50 | 443 | Porous GaAs and InGaAs Buffer Layers Grown by MOCVD on This Substrate - A. Akhsakhalyan, Y. Buzynin, N. Vostokov, S. Gusev, D. Gaponova, Y. Drozdov, B. Zvonkov, A. Murel, and V. Shashkin (Russian Academy of Science) |
Co-Chairs: H. Boehni and R. Alwitt
| Time | Abs# | Title | View |
|---|---|---|---|
| 1:30 | 444 | Development of Quasipotential Transformation Models of the Steady-State Electrochemistry in a Pit with Multiple Heterogeneous Reactions - K. Allahar and M.E. Orazem (University of Florida) | |
| 1:50 | 445 | The Role of O2 on the Stability of Crevice Corrosion - M. Sawford (Crucible Research), B. Ateya (Kuwait University), and H. Pickering (The Pennsylvania State University) | |
| 2:10 | 446 | Influence of the Alloying Elements on the Electronic Structure of Oxide Films Formed on 304 Stainless Steel - M.G.S. Ferreira, N.E. Hakiki, G. Goodlet, S. Faty, A.M.P. Simoes, and M. Da Cunha Belo (Instituto Superior Tecnico) | |
| 2:30 | 447 | Effect of Anodic Oxide Film Structure on the Prevention of Electroless Ni-P deposition on Al5052 Alloy - S.-M. Moon, M. Sakairi, H. Takahashi (Hokkaido University), and K. Shimamura (Sapporo Electro Plating Industry Co., LTD) | |
| 2:50 | 448 | Surface Treatment of AISI 304 and 316 Stainless Steel with Molybdenum and Niobium containing Solutions - L.F. Pinheiro Dick, L. Vieceli Taveira (Universidade Federal do Rio Grande do Sul), and H.P. Strunk (Universitat Erlangen-Nürnberg, Germany) | |
| 3:10 | 449 | Mechanism of Pit Development on Zinc exposed in Tropical and Sub-Tropical Marine Environments - A. Neufeld and I. Cole (CSIRO Australia) | |
| 3:30 | Fifteen-Minute Intermission | ||
| 3:45 | 450 | Mechanism of Pitting Corrosion of Magnetic Recording Media - A. Hodges and T. Devine (University of California) | |
| 4:05 | 451 | Passivity and Pitting Behavior of Sputter-Deposited Mo-Zr Alloys IN 12 M HCl - D. Huerta (ABKO) | |
| 4:25 | 452 | Pitting Corrosion of Porous TiN Deposit on 630 Stainless Steel at Alkaline pH With and Without Chloride - G. Bellanger (Atomic Centre d'Etudes de Valduc) | GIF |
| 4:45 | 453 | Effect of Lead and Silicon on the Passivity of Incoloy 800 In High-Temperature Water - Y. Lu and B. Cleland (Atomic Energy of Canada Ltd.) | |
| 5:05 | 454 | Local Chemistry and Morphology of Pores developed in 55% Al-Zn exposed to Marine Atmospheric Conditions - A. Neufeld and I. Cole (CSIRO Australia) | |
| 5:25 | 455 | Changes of Salt-Content the Hydrocarbonate Solutions and Thermal Conditions as Factors of Copper Passivation and Local Activation - S. Kaluzina, I. Kobanenko, and V. Malygin (Voronezh State University) |
Co-Chairs: K. Sieradzki and M. Niwano
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:30 | 456 | High Resolution Microscopy and Reaction Distribution Modeling - W. Smyrl, F. Guillaume, and J. Evyu (University of Minnesota) | |
| 8:55 | 457 | Evidence for the Reactivity of Interfacial Voids in Aluminum - K. Hebert, H. Wu, M. Fomino (Iowa State University), T. Gessmann, K. Lynn (Washington State University), and P. Asoka-Kumar (Lawrence Livermore National Laboratory) | |
| 9:15 | 458 | Localized pH Profile of Galvanized Steel in Atmospheric Corrosion Process - K. Noda, M. Yamamoto, H. Masuda, and T. Kodama (National Research Institute for Metals) | |
| 9:35 | 459 | Open Circuit Pit Growth in Al Thin Films - D. Lu and G. Frankel (The Ohio State University) | |
| 9:55 | Fifteen-Minute Intermission | ||
| 10:10 | 460 | Determination of Kinetics of Pitting Corrosion in Jells with pH Indicators - H.S. Isaacs and G. Adzic (Brookhaven National Laboratory) | |
| 10:30 | 461 | Laser Assisted Electrochemical Etching of Silicon - Simulations and Experiment - R. Juhasz (Royal Institute of Technology), P. Kleimann (Universite Claude Bernard Lyon I), and J. Linnros (Royal Institute of Technology) | |
| 10:50 | 462 | Scattering Properties of Porous Silicon - R. Sabet-Dariani, A. MortezaAli, and H. Nurani (Azzahra University) | |
| 11:10 | 463 | Structural Reorganization in p-Type Porous Silicon by Mild Heat-Treatment - Y.H. Ogata, N. Yoshimi (Kyoto University), T. Tsuboi (Niigata University), and T. Sakka (Kyoto University) | |
| 11:30 | 464 | Evaluation of Porosity of TiO2 Films from Reflection Spectra - A. Katagiri, T. Matsubara, and T. Oishi (Kyoto University) | GIF |
Co-Chairs: W.H. Smyrl and N. Koshida
| Time | Abs# | Title | View |
|---|---|---|---|
| 1:30 | 465 | Formation and Properties of Porous InP - P. Schmuki, L. Santinacci, T. Djenizian (Swis Fed. Inst. Techn.), and D. Lockwood (Natl. Res. Council) | |
| 1:50 | 466 | Optical Properties of Porous InP - D.J. Lockwood (National Research Council of Canada), L. Santinacci, T. Djenizian, and P. Schmuki (Swiss Federal Institute of Technology (EPFL)) | |
| 2:10 | 467 | Cathodic Decomposition and Changes in Surface Morphology of InP in HCl - M. Seo, M. Aihara (Hokkaido University), and A.W. Hassel (Max-Planck Institut fuer Eisenforschung GmbH) | |
| 2:30 | 468 | Quantitative Analysis of the Morphology of Macropores on Resistive p-Si - J.-N. Chazalviel, F. Ozanam (CNRS - Ecole Polytechnique), N. Gabouze, S. Fellah (UDTS), and R.B. Wehrspohn (Max-Planck Institute for Microstructure Physics) | |
| 2:50 | 469 | Passivated Luminescent Porous Silicon - R. Boukherroub, D. Wayner, D. Lockwood (National Research Council of Canada), and L. Canham (DERA Malvern) | |
| 3:10 | Concluding Remarks |