Co-Chairs: A.G. Baca and S.N.G Chu
| Time | Abs# | Title | View |
|---|---|---|---|
| 1:30 | 735 | InP HBT and HEMT Technology and Applications - A. Gutierrez-Aitken (TRW Space and Electronics Group) | |
| 2:00 | 736 | Reduced Area InGaAs/InP HBT Device Fabrication for High-Speed Circuit Applications - R. Kopf, N. Weimann, R. Hamm, R. Ryan, A. Tate, M. Melendes, R. Melendes, Q. Lee, G. Georgiou, J.-P. Mattia, Y. Baeyens, and Y.-K. Chen (Lucent Technologies, Bell Laboratories) | |
| 2:30 | 737 | Non-Crystallographic Wet Etching of Gallium Arsenide (001) - A. Baca (Sandia National Laboratories) | |
| 2:45 | 738 | Chemical Etching Behavior of n-AlGaAs/p-AlGaAs Structures under Different Light Illumination Conditions - K. Shigyo (Mitsubishi Electric Corporation Advanced Technology R&D Center) and Z. Kawazu (Mitsubishi Electric Corporation) | |
| 3:00 | Thirty-Minute Intermission | ||
| 3:30 | 739 | Progress in Mid-IR Type-II Interband Cascade Lasers - R. Yang, J. Bradshaw, J. Bruno, J. Pham, and D. Wortman (U.S. Army Research Laboratory) | |
| 4:00 | 740 | Development of III-Nitrides for Near-Infrared Optoelectronics Using Intersubband Transitions - H.M. Ng, C. Gmachl, S.N.G. Chu, and A.Y. Cho (Bell Laboratories, Lucent Technologies) | |
| 4:30 | 741 | Visible Vertical Cavity Light Emitters for Fibre Optical Communication - M. Saarinen, V. Vilokkinen, P. Sipila, N. Xiang, S. Orsila, M. Guina, P. Melanen, M. Dumitrescu, P. Uusimaa, P. Savolainen, and M. Pessa (Tampere University of Technology) |
Co-Chairs: F.Ren and J.P. Vilcot
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:00 | 742 | Exploring OMVPE-Grown InGaAsN for Electronic & Optoelectronic Devices - N.-Y. Li (Emcore Photovoltaic), P.-C. Chang, A.G. Baca (Sandia National Laboratories), J.R. Laroche, F. Ren (University of Florida), E. Armour (Emcore Electronic Materials), J. Hills, M. Xie, D. Thang, M. Stan, P.R. Sharps (Emcore Photovoltaic), X.-C. Wang (Microoptical Devices), and H.Q. Hou (Emcore Photovoltaic) | |
| 8:30 | 743 | Antimonide-Based Long-Wavelength Lasers on GaAs Substrates - J. Klem, O. Blum, K. Choquette, I. Fritz, and S. Kurtz (Sandia National Laboratories) | |
| 9:00 | 744 | Growth of InAs/InSb Superlattices via Electrochemical Atomic Layer Epitaxy - U. Happek, T.L. Wade, R. Vaidyanathan, K. Mathe, and J.L. Stickney (The University of Georgia) | |
| 9:15 | 745 | Novel MOS Schemes for Electronic Devices with Photoanodically Grown Oxides on GaN Surfaces - D. Mistele, T. Rotter, H. Klausing, F. Fedler, O. Semchinova, J. Stemmer, J. Aderhold, and J. Graul (University of Hanover) | |
| 9:30 | Thirty-Minute Intermission | ||
| 10:00 | 746 | GaN Power Devices - S. Pearton (University of Florida) | |
| 10:30 | 747 | Fabrication of an Integrated Optics 1 to 2 Optical Switch - Y. Hernandez, J.-P. Vilcot, D. Decoster (Institut d'Electronique et de Microelectronique du Nord), and J. Chazelas (Thomson-Detexis) | |
| 10:45 | 748 | Optical Characterization of Acceptor Implantation in GaN - B. Skromme, G. Martinez (Arizona State University), A. Suvkhanov, L. Krasnobaev (Implant Sciences Corporation), and D. Poker (Oak Ridge National Laboratory) |
Co-Chairs: R.F. Kopf and J.M. Parsey Jr.
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 749 | III-V Enhancement Mode Field Effect Transistor Technologies for Cellular Applications - J. Costa (Motorola DDL) | |
| 2:30 | 750 | InP HBT Device Parameter Extraction for Spice Modeling and Process Optimization - N.G. Weimann, R.F. Kopf, R.A. Hamm, J.-M. Kuo, M. Lee, M. Melendes, R. Melendes, R.W. Ryan, A. Tate, and Y.K. Chen (Lucent Technologies, Bell Laboratories) | |
| 3:00 | Thirty-Minute Intermission | ||
| 3:30 | 751 | RF Characteristics of Aluminum-Free PnP InGaAsN Heterojunction Bipolar Transistors - P.-C. Chang (Sandia National Laboratories), N.-Y. Li (Emcore Photovoltaic), A.G. Baca (Sandia National Laboratories), C. Monier, J.R. Laroche (University of Florida), H.Q. Hou (Emcore Photovoltaic), F. Ren, and S.J. Pearton (University of Florida) | |
| 4:00 | 752 | GaInNAs and GaInNP/GaAs for Heterojunction Bipolar Transistors - C.W. Tu, R.J. Welty, Y.G. Hong, H.P. Xin (UCSD), K. Mochizuki (Hitachi Central Research Laboratory), and P.M. Asbeck (UCSD) | |
| 4:30 | 753 | Fabrication and Materials Characterization of Pulsed Laser Deposited Nickel Silicide Ohmic Contacts to 4H n-SiC - M. Cole, P. Joshi, C. Hubbard, E. Ngo, D. Demaree, J. Hirvonen, M. Wood, M. Ervin (U.S. Army Research Laboratory), C. Richardson, and M. Wisnioski (The Johns Hopkins University) |
Co-Chairs: P.C. Chang and D.N. Buckley
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 754 | Cantilever Epitaxy: A Simple Lateral Growth Technique for Reducing Dislocation Densities in GaN and Other Nitrides - C. Ashby (Sandia National Laboratories) | |
| 10:30 | 755 | The Formation Mechanism of SiC/Si Interface in the Growth of SiC Films on Si - K.S. Nahm, K.C. Kim, C.I. Park (Chonbuk National University), and Y.H. Seo (Anam) | |
| 10:45 | Fifteen-Minute Intermission | ||
| 11:00 | 756 | SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors - J.W. Johnson, B.P. Gila, B. Luo, K.P. Lee, C.R. Abernathy, S.J. Pearton (University of Florida), J.I. Chyi, T.E. Nee, C.M. Lee, C.C. Chu (National Central University), T.J. Anderson, and F. Ren (University of Florida) | |
| 11:15 | 757 | The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs - B. Luo, V.P. Trivedi, F. Ren (University of Florida), C.H. Hsu (Feng Chia University), S.J. Pearton, C.R. Abernathy, X. Cao (University of Florida), C.S. Wu, M. Hoppe (TRW), J. Sasserath, and J.W. Lee (Plasma Therm) | |
| 11:30 | 758 | Optical and Electrical Properties of AlxGa1-xN Grown on Si(111) - S. Nikishin, M. Holtz, and H. Temkin (Texas Tech University) |