Co-Chairs: P.C. Andricacos and P.C. Searson
| Time | Abs# | Title | View |
|---|---|---|---|
| 1:30 | 304 | A Superfilling Model that Predicts Bump Formation - A. West (Columbia University), S. Mayer, and J. Reid (Novellus Systems) | |
| 1:45 | 305 | Integrated Multiscale Simulation of Copper Electrochemical Deposition Processes - M. Bloomfield, K. Jansen, and T. Cale (Rensselaer Polytechnic Institute) | |
| 2:00 | 306 | A Computationally Efficient Feature Scale Model and Experimental Study for Copper Electrodeposition in the Presence of Additives - G.-S. Kim (Massachusets Institute of Technology), T. Merchant (Motorola Semiconductor Product Sector), J. D'Urso (Motorola Labs), and K. Jensen (Massachusets Institute of Technology) | |
| 2:15 | 307 | Electrochemical Deposition of Copper on Non-metallic Substrates for ULSI Applications - M. Shaw and D. Duquette (Rensselaer Polytechnic Institute) | |
| 2:30 | 308 | Investigation of the Effects of Byproduct Components in Cu Plating for Advanced Interconnect Metallization - L.-T. Koh, G.-Z. You, C.-Y. Li, and P.-D. Foo (Institute of Microelectronics) | |
| 2:45 | 309 | Galvanostatic Method for Quantification of Organic Suppressor and Accelerator Additives in Acid Copper Plating Baths - P. Roberston (ATMI Analytical Systems), D. Fulton (Semitool Inc.), and Y. Tolmachev (ATMI Analytical Systems) | |
| 3:00 | Thirty-Minute Intermission | ||
| 3:30 | 310 | Copper Interconnection via Displacement Deposition atop Nitride Barrier Layer and Underneath Silicon Substrate - Y. Wu, Y.-Y. Wang, and C.-C. Wan (Tsing-Hua University) | |
| 3:45 | 311 | The Effects of Cleaning and Pre-treatment on the Electroless Copper Deposition - Y.-J. Oh and C.-H. Cung (Sungkyunkwan University) | |
| 4:00 | 312 | An Acid-Based Electroless Cu Deposition Process: Chemical Formulation, Film Characteristics and CMP Performance - W.-T. Tseng, C.-H. Lo, and S.-C. Lee (WaferTech, LLC) | |
| 4:14 | 313 | Electrochemical Effects of Various Oxidants on Cu-CMP in Ammonia-Based Slurries - S.-C. Yen and T.-H. Tsai (National Taiwan University) |
Co-Chairs: J.L. Stickney and P.C. Andricacos
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 314 | Electrodeposition of Thermoelectric Materials for Quantum Cold Point Coolers - U. Ghoshal, E. Cooper, and P. Andricacos (IBM Research) | |
| 10:30 | 315 | Integration of Thermoelectric Materials Onto SI Using Electrochemical Atomic Layer Epitaxy - Y. Chen, I. Nicic, and C. Shannon (Auburn University) | |
| 10:45 | 316 | Electrodeposition of Au on Si(111): Towards Nanowire Formation - P. Allongue, M. Munford (Universite P & M Curie), and A. Pasa (UFSC) | |
| 11:00 | Fifteen-Minute Intermission | ||
| 11:15 | 317 | Sub-Micron Pt Electrodes by Through-Mask Plating - K.L. Saenger (IBM Research Division), G. Costrini (IBM Microelectronics), D.E. Kotecki (University of Maine), K.T. Kwietniak, and P.C. Andricacos (IBM Research Division) | |
| 11:30 | 318 | Hydrogen Peroxide Oxygen Precursor for Zinc Oxide Electrodeposition - T. Pauporte and D. Lincot (UMR) | |
| 11:45 | 319 | Experimental Studies on Electrodeposition of CoFe Alloys - H. Xu, T.E. Dinan (IBM Almaden Research Center), E.I. Cooper, L.T. Romankiw (IBM T. J. Watson Research Center), and D. Miller (IBM Almaden Research Center) |
Co-Chairs: P.C. Andricacos and J.L. Stickney
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 320 | Effect of Cu Content and Cu Partial Current on GMR of Electrodeposited Co-Ni-Cu/Cu Multilayers - G. Nabiyouni (University Of Arak, Iran), S. Huo (University of Bristol, UK), S. Roy (University of Newcastle UK), and W. Schwarzacher (University of Bristol, UK) | |
| 2:15 | 321 | Electrodeposition of Ferromagnetic Thin Films on Semiconductor Substrates - P. Evans, C. Scheck, R. Schad, and G. Zangari (University of Alabama) | |
| 2:30 | 322 | Electrodeposition of Fe3O4 on Single Crystal Silicon Substrates - T. Sorenson, M. Nikoforov, and J. Switzer (University of Missouri Rolla) | |
| 2:45 | 323 | Synthesis of Ternary Compounds on Ag(111) by Electrochemical ALE - G. Pezzatini, F. Loglio, M. Innocenti, F. Forni, and M.L. Foresti (University of Florence) | |
| 3:00 | Fifteen-Minute Intermission | ||
| 3:15 | 324 | Progress in the Formation of Compound Semiconductors using Electrochemical Atomic Layer Epitaxy (EC-ALE) - B. Flowers, T. Wade, R. Vaidyanathen, U. Happek, and J. Stickney (University of Georgia) | |
| 3:30 | 325 | Ion Transport Modelling in Realistic Thin-Layer ECD for Gravitoconvection Prevailing Regimes - G. Marshall, S. Dengra, E. Arias (UBA), F.V. Molina (INQUIMAE, Facultad de Ciencias Exactas, UBA), M. Vallieres (Drexel University, Department of Physics), and G. Gonzalez (UBA) | |
| 3:45 | 326 | Failure Analysis by new Scanning Transmission Electron Microscope HD-2000 - M. Koguchi, S. Isakozawa (Hitachi, Ltd.), and M. Iwaki (The Institute of Physical and Cheical Research) |