Co-Chairs: F. Teyssandier and M.D. Allendorf
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | Introductory Remarks | ||
| 10:05 | 845 | Gas-Phase Kinetic Studies of Silylene and Germylene: Important Intermediates in the Breakdown Processes of Silanes and Germanes - R. Becerra (Instituto Quimica Fisica 'Rocasolano'), S. Boganov, M. Egorov, V. Faustov, O. Nefedov (Russian Academy of Sciences), and R. Walsh (University of Reading) | |
| 10:45 | 846 | Ab Initio Studies of the Reaction of Silicon Atoms with Silane, and Implications for Hot-Wire CVD of Amorphous Silicon - R.P. Muller, J.K. Holt, D.G. Goodwin, and W.A. Goddard III (California Institute of Technology) | |
| 11:05 | 847 | High-Temperature Kinetics of AlCl3 Decomposition in the Presence of Additives for Chemical Vapor Deposition - L. Catoire (University of Orleans) and M. Swihart (University at Buffalo - SUNY) | |
| 11:25 | 848 | Kinetics And Mechanism Of The Thermal Decomposition Of Tetrakis(dimethylamino)titanium - C. Amato-Wierda and E. Norton (University of New Hampshire) | |
| 11:45 | 849 | Gas Phase Chemical Reactions in TaN Low-Pressure Chemical Vapor Deposition - Y. Ohshita (Toyota Technological Institute), A. Ogura (NEC Corp.), A. Hoshino, S. Hiiro, A. Tabaru, and H. Machida (TRI Chemical Laboratory Inc.) |
Co-Chairs: C. Amato-Wierda and M. Swihart
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 850 | In Situ Gas Phase Optical Measurements of Silane Decomposition in a Thermal Chemical Vapor Deposition Reactor - J. Maslar, R. Davis, E. Moore, D. Burgess (National Institute of Standards and Technology), D. Kremer, and S. Ehrman (University of Maryland) | |
| 2:20 | 851 | Kinetic Mechanism of Silicon Epitaxial Growth from Silanes and Chlorosilanes - G. Valente, C. Cavallotti, M. Masi, and S. Carra (Politecnico di Milano) | |
| 2:40 | 852 | Evaluating the Contributions of both Catalytic and Thermal Chemistry in Hot-wire CVD - J. Zhou and C. Wolden (Colorado School of Mines) | |
| 3:00 | 853 | A Mechanism-based Model of Chemical Vapor Deposition of Epitaxial SiGe Films - M. Stoker, T. Merchant, A. Morton, and J. Hildreth (Semiconductor Product Sector, Motorola, Inc.) | |
| 3:20 | Twenty-Minute Intermission | ||
| 3:40 | 854 | Reduction of Complex Gaseous Reaction Mechanisms Used in the CVD Process - S. de Persis and F. teyssandier (Universite de Perpignan) | |
| 4:00 | 855 | Homogeneous and Surface Chemistry of the Chemical Vapor Deposition of Aluminosilicates from Metal Chloride Mixtures in CO2 and H2 - S. Nitodas and S. Sotirchos (University of Rochester) | |
| 4:20 | 856 | Mechanistic Studies on Single-Source Precursors for MOCVD of Group 13 Nitrides: Matrix Isolation and ab Initio Calculations - J. Müller (Ruhr-Universitat Bochum), B. Wittig (RWTH Aachen), H. Sternkicker (Ruhr-Universitat Bochum), and S. Bendix (RWTH Aachen) | |
| 4:40 | 857 | Near-Infrared Diode Laser In Situ Monitoring and Control of Chemical Vapour Deposition Processes - P. Martin (University of Huddersfield), R. Holdsworth (TDL Sensors Ltd), M. Davis, M. Pemble (University of Salford), and D. Sheel (CVD Technologies Ltd) |
Co-Chairs: M. Meyyappan and M.D. Allendorf
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:20 | 858 | First-Principles-Based Modeling of Surface Reactivity and Growth Kinetics for Vapor Deposition Processes - M. Neurock, H. Wen, Q. Ge, and H. Wadley (University of Virginia) | |
| 9:00 | 859 | Three-dimensional Monte Carlo Simulation of Beta-SiC Deposition from the Vapor Phase - G. Chaix and A. Dollet (CNRS) | |
| 9:20 | 860 | Interaction of NO Molecules with Si/Ultrathin SiO2 Interface - J.L. Cantin, J. von Bardeleben, L. Gosset, J.J. Ganem, and I. Trimaille (Universites Paris 6 et 7) | |
| 9:40 | 861 | Initial growth of Cu on SiO_2 and 3-mercaptopropyltrimethoxysilane-coated SiO2 - M. Hu, S. Noda, Y. Ogawa, Y. Tsuji, T. Okubo, Y. Yamaguchi, and H. Komiyama (University of Tokyo) | |
| 10:00 | Twenty-Minute Intermission | ||
| 10:20 | 862 | Photoemission Oscillations Observed in Chemical Beam Epitaxy of GaAs Using Triethylgallium and Organoarsines - F. Maury (CNRS/INPT), A.M. Gue (CNRS), and N. Viguier (CNRS/INPT) | |
| 11:00 | 863 | Silicon-Germanium Alloy Chemical Vapor Deposition Chemistry and Kinetics - J. Ekerdt (University of Texas at Austin) | |
| 11:20 | 864 | Kinetics and Gas-Surface Dynamics of GaN Homoepitaxial Growth Using NH3-Seeded Supersonic Molecular Beams - H.H. Lamb, A. McGinnis, and R. Davis (North Carolina State University) | |
| 11:40 | 865 | Mapping of GaAs(001) Surface Reconstructions During Molecular Beam Epitaxy Using RHEED and Diffuse Reflectance Spectroscopy - J.E. Guyer, D.A. Gajewski, and J.G. Pellegrino (National Institute of Standards and Technology) |
Co-Chairs: D. Goodwin and T. Besmann
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 866 | Oxide Film Growth for Electroceramic Thin Films. New and Improved Transparent Conductors Using MOCVD - T. Marks (Northwestern University) | |
| 2:40 | 867 | Automatic Control of Stoichiometry in Vapor Deposition of Metal Silicates by Alternating Surface Reactions - R. Gordon (Harvard University) | |
| 3:00 | 868 | Anhydrous Metal Nitrates as CVD and ALD Precursors to Metal Oxide Insulators on Silicon - J. Roberts, W. Gladfelter, S. Campbell, R. Smith, D. Burlesen, and N. Hoilien (University of Minnesota) | |
| 3:20 | 869 | Chemical Deposition Routes to HfO2: Real-Time Monitoring and Film Growth - K. Forsgren, A. Hårsta (Uppsala University), K. Kukli, J. Aarik, and A. Aidla (University of Tartu) | |
| 3:40 | Twenty-Minute Intermission |
Co-Chairs: M. Zachariah and S. Girshick
| Time | Abs# | Title | View |
|---|---|---|---|
| 4:00 | 870 | Probing the Adsorption of Fluorine on Aluminum (111) Surfaces by Low-Energy Ion Scattering and Density-Functional Calculations - M. Allendorf and R. Bastasz (Sandia National Laboratories) | |
| 4:20 | 871 | Evolution of Surface Morphology During CH4/H2 Plasma Etching of GaAs (001) - S.W. Robey (National Institute of Standards and Technology) | |
| 4:40 | 872 | Gas Phase Analysis of TiN and TiC Plasma Enhanced CVD Processes by Molecular Beam Mass Spectrometry - C. Amato-Wierda and C. Reddy (University of New Hampshire) | |
| 5:00 | 873 | Energy and Angular Distribution of Ions Effusing from a Hole in Contact with a High Density Plasma - D. Economou, D. Kim, and C.-K. Kim (University of Houston) | |
| 5:20 | 874 | Capacitive-Inductive Transition and Related Optical Plasma Structure Driven by a Single Turn Radiofrequency Current Coil - Y. Miyoshi, N. Itazu, and T. Makabe (Keio University) |
Co-Chairs: L. Kadinski and S. Seal
| Time | Abs# | Title | View |
|---|---|---|---|
| o | 875 | Nanosized GaN Particles by Chemical Vapor Infiltration - H. Parala, A. Devi, and R. Fischer (Ruhr University Bochum) | |
| o | 876 | Modeling of Aluminum Nanoparticle Formation - R. Schefflan, S. Kovenklioglu, and D. Kalyon (Stevens Institute of Technology) | |
| o | 877 | A Photothermal Aerosol Synthesis Reactor for Production of Semiconductor Nanoparticles and Investigation of Nanoparticle Nucleation and Growth - S. Talukdar, X. Li, and M. Swihart (University at Buffalo - SUNY) | |
| o | 878 | In Situ - Gas Phase Analysis During Si Thin Film Deposition: Molecular Beam Sampling, Laser Ionisation and Mass Spectrometry - H. Stafast, F. Falk, and E. Witkowicz (Institut fuer Physikalische Hochtechnologie) | |
| o | 879 | Kinetics of Gas-Phase Reactions in the N-H System - S. de persis, F. Teyssandier (Universite de Perpignan), and A. dollet (CNRS) | |
| o | 880 | A Study of the Gas-Phase Reactions of Ti(EtMe)4 - D.-H. Kim and S.-J. Kim (Chonnam National University) | |
| o | 881 | CVD of Group 13-15 Binary Materials: Importance of the Association Reactions in the Gas Phase - A. Timoshkin (St. Petersburg State University) | |
| o | 882 | On the Role of HCl in CVD Reaction Mechanisms Involving Chloridic Precursors - D. Neuschutz, J. Muller, and E. Zimmermann (Rheinisch-Westfalische Technische Hochschule Aachen) | |
| o | 883 | Kinetic Monte Carlo Simulation of Homogeneous Nucleation of Hydrogenated Silicon Nanoparticles During Silane Thermal Decomposition - X. Li and M. Swihart (University at Buffalo - SUNY) | |
| o | 884 | Computer Simulation of WSix CVD VLSI Processing - Effect of Abnormal Inlet Gas Flow - - K. Sugawara, T. Muranushi, T. Takai (Nihon University), Y.K. Chae, Y. Shimogaki, and H. Komiyama (University of Tokyo) | |
| o | 885 | Three-Dimensional Numerical MOdeling of CVD of Boron Nitride - J. Lennartz (Advanced Ceramics Corporation), S.F. Owens, and S. Kim (CFD Research Corporation) | |
| o | 886 | Modeling of SiGe Epitaxial Growth in a Wide Range of Growth Conditions - A. Segal, A. Sid'ko, S. Karpov (Soft-Impact Ltd), and Y. Makarov (University of Erlangen-Nurnberg) | |
| o | 887 | An Integrated Simulation Scheme to Optimize Dense Memory Layouts - A. Balasinski (Cypress Semiconductor), L. Karklin (Numerical Technologies), and V. Axelrad (Sequoia Design Systems) | |
| o | 888 | Hysteretical Surface Chemical Kinetics as a Possible Explanation for Sharp SL/RL Pyrocarbon Transition in CVD/CVI - G.L. Vignoles (Domaine Universitaire), C.-M. Brauner, and O. Baconneau (Universite Bordeaux 1) | |
| o | 889 | Modeling Analysis of Gas-Phase Generated Silicon Clusters in a Rotating Disk CVD Reactor - A. Vorob'ev, S. Karpov (Soft-Impact Ltd), Y. Makarov (University of Erlangen-Nürnberg), and R. Davis (Chemical Science and Technology Laboratory, National Institute of Standards and Technology) | |
| o | 890 | Effects of Pad Surface Fuzz Status on ILD Within-Wafer Planarity - L. Chi-Hung, L. Chih-Hung, H. Chi-Yeh, and C. Liang-Keui (Winbond Electronics Corp.) | |
| o | 891 | CVD of Ti-W-C-N Films with Ti[(CH3)2N]4 and W(CO)6 - H.X. ji and C.C. Amato-Wierda (University of New Hampshire) | |
| o | 892 | Codeposition of the DEB-Palladium Hydrogen Getter System - D. Carroll, D. Pesiri, K. Salazar, M. Trkula, J. Rau, and C. Sandoval (Los Alamos National Laboratory) | |
| o | 893 | Failure Analysis of E-Test Failure and Yield Enhancement in Wafer Fabrication - Y.N. Hua (Chartered Semiconductor Mfg Ltd) | |
| o | 894 | Slurry Management Systems: Environmental, Safety and Health Considerations - J. Bare (BOC Edwards) | |
| o | 895 | Control of Dielectric Cap Induced Bandgap Shift in InGaAsP Lasers - J. Wojcik, P. Mascher, C. Simionescu, B. Robinson, and D.A. Thompson (McMaster University) | |
| o | 896 | Effects of Gas Phase Composition on Ion Beam Induced Surface Deposition - H. Wanzenboeck, E. Bertagnolli, and H. Störi (Vienna University of Technology) | |
| o | 897 | Application of FTIR Analysis in Identification of Contamination in Wafer Fabrication - Y.N. Hua (Chartered Semiconductor Mfg Ltd) | |
| o | 898 | Studies & Elimination of Metal Filament in Wafer Fabrication - L.H. An, E.C. Low, Y.N. Hua, and K.K. Lai (Chartered Semiconductor Mfg Ltd) | |
| o | 899 | Investigation and Elimination of Particle Contamination in Wafer Fabrication - Y.N. Hua, L.H. An, R. Yogespri, and R. Shailesh (Chartered Semiconductor Mfg Ltd) | |
| o | 900 | Dynamic Feedback Recipe in CMP Productionline - C.-H. Li, H. Chi-Yeh, L. Chi-Hung, T.K.J. Liu, and L.-K. Chou (Winbond Electronics Corp.) | |
| o | 901 | Deposition of Indium Oxide Films in Plasma CVD - O. Matsumoto, N. Haraoka, Y. Midorikawa, and K.-I. Itoh (Aoyama Gakuin University) | |
| o | 902 | ZnO Film Deposition by Plasma Enhanced CVD Using Zinc-acetylacetonate - T. Aoki, H. Nonaka, and Y. Hatanaka (Shizuoka University) | |
| o | 903 | Indium Nitride Whisker Growth by Chemical Vapor Deposition - A. Devi, H. Parala, and R. Fischer (Ruhr University Bochum) | |
| o | 904 | Rate Theory of Multicomponent Adsorption of Organic Species from Gas Phase on Silicon Wafer Surface - H. Habuka (Yokohama National University), M. Shimada, and K. Okuyama (Hiroshima University) | |
| o | 905 | TPD Study on the Decomposition Mechanism of Ti(i-OPr)4 on Si(100) - S.-I. Cho, C.-H. Chung (Seoul National University), and S.H. Moon (Sungkynkwan University) | |
| o | 906 | Mono-Molecular Adsorbed Layers of Water on an Oxide and their Point Defects under Equilibrium as a Model for Gas Adsorption - S. Raz (Technion Israel Institute of Technology), K. Sasaki, J. Maier (Max Planck Institute for Solid State Research), and I. Riess (Technion Israel Institute of Technology) | |
| o | 907 | In Situ Fault Detection and Thickness Metrology using Quadrupole Mass Spectrometry - E. Rying, M. Ozturk, G. Bilbro (North Carolina State University), and J.C. Lu (Georgia Institute of Technology) | |
| o | 908 | Characterization of Thin Dielectric Layers Using the Non-Contact Surface Charge Profiler (SCP) Method - P. Roman, D.-O. Lee (Penn State University), P. Mumbauer, R. Grant (PRIMAXX, Inc.), J. Tower, E. Kamieniecki (QC Solutions, Inc.), L. Lukasiak (Warsaw University of Technology), and J. Ruzyllo (Penn State University) | |
| o | 909 | Experimental and Numerical Study of the CVD of TiO2 using New Titanium Precursors - T. Leistner, L. Frey (Universitat Erlangen-Nurnberg), C. Schmit (FhG IIS-B), K. Lehmbacher, P. Harter, W. Herrmann (TU Munchen), E. Mesic, P. Kaufmann, L. Kadinski, and F. Durst (Universitat Erlangen-Nurnberg) |
Co-Chairs: M. Meyyappan and D. Economou
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | Presentation of the Outstanding Achievement Award of the High Temperature Materials Division | ||
| 10:05 | 910 | HIGH TEMPERATURE MATERIALS DIVISION OUTSTANDING ACHEIVEMENT AWARD ADDRESS-Numerical Simulation of Vapor Phase Deposition Based on Thermodynamics, Kinetics and Mass Transport - C. Bernard (CNRS-INPG-UJF) | |
| 10:45 | 911 | Process Analysis and Modeling of Thin Silicon Film Deposition by Hot-Wire Chemical Vapor Deposition - R. Aparicio, R. Birkmire, A. Pant, M. Huff, and T.F. Russell (University of Delaware) | |
| 11:05 | 912 | Comparison Between Computational Modelling and Experiment for a CVD Growth Process of Silicon Films - B. Atakan, M. Hofstatter, and K. Kohse-Hoinghaus (Universitat Bielefeld) | |
| 11:25 | 913 | Modeling of a Silane LPCVD Process used for Microelectronics and MEMS Fabrication - R.P. Pawlowski, A.G. Salinger, S.D. Habermehl, and P. Ho (Sandia National Laboratories) | |
| 11:45 | 914 | Theoretical Optimization of Al-CVD Using Elementary Reaction Simulation - M. Sugiyama, T. Iino, T. Nakajima, T. Tanaka (Univ. of Tokyo), H. Itoh, J.-I. Aoyama (STARC), Y. Egashira (Osaka University), K. Yamashita, H. Komiyama, and Y. Shimogaki (Univ. of Tokyo) |
Co-Chairs: C. Bernard and C. Wolin
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 915 | Detailed Modeling of Metal Organic Vapor Phase Epitaxy of III-V Ternary Compounds in Production-Scale AIX 2400G3 Planetary Reactor - E.V. Yakovlev, Y.A. Shpolyanskiy, R.A. Talalaev, S.Y. Karpov (Soft-Impact Ltd), Y.N. Makarov (University of Erlangen-Nuernberg), S.A. Lowry (CFD Research Corporation), and T. Bergunde (Ferdinand-Braun-Institut für Höchstfrequenztechnik) | |
| 2:20 | 916 | Numerical Simulation of the CVD of SIC Using Different Kinetic Models - V. Wunder (Universitat Erlangen-Nurnberg) and L. Kadinski (Universitat Erlangen-Nurnbe) | |
| 2:40 | 917 | Two-Dimensional Simulation of Pulsed Power Electronegative Plasmas - D. Economou and B. Ramamurthi (University of Houston) | |
| 3:00 | 918 | Mesoscale Modeling for LPCVD in the Transition Regime - M.K. Gobbert (University of Maryland, Baltimore County) and T.S. Cale (Rensselaer Polytechnic Institute) | |
| 3:20 | Twenty-Minute Intermission | ||
| 3:40 | 919 | Reduction Strategies for Kinetic Monte Carlo Models of Thin Film Growth - M. Gallivan, R. Murray, and D. Goodwin (California Institute of Technology) | |
| 4:00 | 920 | Empirical Parameter-Free Recipe for Implantation and Annealing Modeling of N+ Source and Drain in the 180nm and 100nm technology Node - H.-J. Li, X. Chen (University of Texas at Austin), P. Zeitzoff, K. Torres (International SEMATECH), and S. Banerjee (University of Texas at Austin) | |
| 4:20 | 921 | Effects of Pulsating Flow on Cleaning of and Deposition intoTrenches - I. Suni, H. Lin, and A. Busnaina (Clarkson University) |
Co-Chairs: V. Wunder and M. Masi
| Time | Abs# | Title | View |
|---|---|---|---|
| 4:40 | 922 | Improved Chemical Vapor Deposition of Diamond Layers on Cemented Carbides by Formation of Tungsten-Cobalt-Boron Phases in the Interface Region - R. Cremer, K. Reichert, J. Muller, D. Neuschutz (Rheinisch-Westfalische Technische Hochschule Aachen), T. Leyendecker, O. Lemmer, M. Frank, and J. Gussone (CemeCon GmbH) | |
| 5:00 | 923 | Effect of Deposition Temperature on the Chemical and Mechanical Behavior of Ti-Al-N Thin Films - S. Seal (University of Central Florida), A. Kale (University of Florida), , and K. Sundaram (University of Central Florida) | |
| 5:20 | 924 | Characterization Studies of Nanophasic CeO2-ZrO2 Multilayers Obtained by CVD - D. Barreca (Universita di Padova), G.A. Battiston, S. Daolio, M. Fabrizio, R. Gerbasi (CNR), E. Tondello (Universita di Padova), and S. Barison (CNR) |
Co-Chairs: S. Sotirchos and S. Seal
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:20 | 925 | Kinetic Modeling of Particle Formation During Low-Pressure Silane Oxidation and CVD - S.-M. Suh, S. Girshick, and M. Zachariah (University of Minnesota) | |
| 9:00 | 926 | Gas-Phase Nucleation in Low-Pressure Silane Plasmas - U. Bhandarkar, S. Girshick (University of Minnesota), M. Swihart (University at Buffalo - SUNY), and U. Kortshagen (University of Minnesota) | |
| 9:20 | 927 | CFD Modeling of Aerosol Reactors for Material Synthesis - M. Masi, F. Di Muzio, and S. Carra (Politecnico di Milano) | |
| 9:40 | 928 | Multi-Element Diffusion Burner Facility for Combustion Synthesis Studies - P. Torek, D. Hall, T. Miller, and M. Wooldridge (University of Michigan) | |
| 10:00 | Twenty-Minute Intermission |
Co-Chairs: M. Swihart and R. Pawlowski
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:20 | 929 | Atmospheric Pressure CVD of YSZ Using Stagnation Flow - T.M. Besmann (Oak Ridge National Laboratory), T.L. Starr (University of Louisville), V. Varanasi, and T.J. Anderson (University of Florida) | |
| 10:40 | 930 | Initial Stage of Oriented SnO2 Thin Film Formation via Spray Pyrolysis of Organotin(IV) Compound - S. Kaneko, I. Yagi, T. Kosugi, K. Nakajima, M. Okuya, and K. Murakami (Shizuoka University) | |
| 11:00 | 931 | A Study on Surface Morphology of Si Thin Film Grown by Temperature Modulated Molecular Layer Epitaxy method - J.-I. Nishizawa, A. Murai, T. Oizumi, T. Kurabayashi (Semiconductor Research Institute of Semiconductor Research Foundation), K. Kanamoto (SENDAI Research Center), and T. Yoshida (Semiconductor Research Institute of Semiconductor Research Foundation) | |
| 11:20 | 932 | Laser-Assisted Gas-Phase Reactivity of Trimethylaluminum with NH3 in Constrained Gas Pulse Nozzle Expansions - A. Demchuk, S. Simpson, and B. Koplitz (Tulane University) | |
| 11:40 | 933 | LCVD of Copper Thin Films on Silicon - M. Jacquorie and E.W. Kreutz (Rheinisch-Westfalische Technische Hochschule Aachen) |