199th Meeting - Washington, DC

March 25-30, 2001

PROGRAM INFORMATION

S1I1 - Fundamental Gas-Phase and Surface Chemistry of Vapor Deposition II and Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing IV

High Temperature Materials Division/Dielectric Science and Technology/Electronics Division

Monday, March 26, 2001

West Salon A, Ballroom Level

Gas-Phase Chemistry of Deposition Processes

Co-Chairs: F. Teyssandier and M.D. Allendorf

TimeAbs#TitleView
10:00 Introductory Remarks
10:05845 Gas-Phase Kinetic Studies of Silylene and Germylene: Important Intermediates in the Breakdown Processes of Silanes and Germanes - R. Becerra (Instituto Quimica Fisica 'Rocasolano'), S. Boganov, M. Egorov, V. Faustov, O. Nefedov (Russian Academy of Sciences), and R. Walsh (University of Reading) PDF
10:45846 Ab Initio Studies of the Reaction of Silicon Atoms with Silane, and Implications for Hot-Wire CVD of Amorphous Silicon - R.P. Muller, J.K. Holt, D.G. Goodwin, and W.A. Goddard III (California Institute of Technology) PDF
11:05847 High-Temperature Kinetics of AlCl3 Decomposition in the Presence of Additives for Chemical Vapor Deposition - L. Catoire (University of Orleans) and M. Swihart (University at Buffalo - SUNY) PDF
11:25848 Kinetics And Mechanism Of The Thermal Decomposition Of Tetrakis(dimethylamino)titanium - C. Amato-Wierda and E. Norton (University of New Hampshire) PDF
11:45849 Gas Phase Chemical Reactions in TaN Low-Pressure Chemical Vapor Deposition - Y. Ohshita (Toyota Technological Institute), A. Ogura (NEC Corp.), A. Hoshino, S. Hiiro, A. Tabaru, and H. Machida (TRI Chemical Laboratory Inc.) PDF

Mechanistic Studies of Vapor Phase Deposition

Co-Chairs: C. Amato-Wierda and M. Swihart

TimeAbs#TitleView
2:00850 In Situ Gas Phase Optical Measurements of Silane Decomposition in a Thermal Chemical Vapor Deposition Reactor - J. Maslar, R. Davis, E. Moore, D. Burgess (National Institute of Standards and Technology), D. Kremer, and S. Ehrman (University of Maryland) PDF
2:20851 Kinetic Mechanism of Silicon Epitaxial Growth from Silanes and Chlorosilanes - G. Valente, C. Cavallotti, M. Masi, and S. Carra (Politecnico di Milano) PDF
2:40852 Evaluating the Contributions of both Catalytic and Thermal Chemistry in Hot-wire CVD - J. Zhou and C. Wolden (Colorado School of Mines) PDF
3:00853 A Mechanism-based Model of Chemical Vapor Deposition of Epitaxial SiGe Films - M. Stoker, T. Merchant, A. Morton, and J. Hildreth (Semiconductor Product Sector, Motorola, Inc.) PDF
3:20 Twenty-Minute Intermission
3:40854 Reduction of Complex Gaseous Reaction Mechanisms Used in the CVD Process - S. de Persis and F. teyssandier (Universite de Perpignan) PDF
4:00855 Homogeneous and Surface Chemistry of the Chemical Vapor Deposition of Aluminosilicates from Metal Chloride Mixtures in CO2 and H2 - S. Nitodas and S. Sotirchos (University of Rochester) PDF
4:20856 Mechanistic Studies on Single-Source Precursors for MOCVD of Group 13 Nitrides: Matrix Isolation and ab Initio Calculations - J. Müller (Ruhr-Universitat Bochum), B. Wittig (RWTH Aachen), H. Sternkicker (Ruhr-Universitat Bochum), and S. Bendix (RWTH Aachen) PDF
4:40857 Near-Infrared Diode Laser In Situ Monitoring and Control of Chemical Vapour Deposition Processes - P. Martin (University of Huddersfield), R. Holdsworth (TDL Sensors Ltd), M. Davis, M. Pemble (University of Salford), and D. Sheel (CVD Technologies Ltd) PDF

Tuesday, March 27, 2001

Surface Chemistry of Deposition Processes

Co-Chairs: M. Meyyappan and M.D. Allendorf

TimeAbs#TitleView
8:20858 First-Principles-Based Modeling of Surface Reactivity and Growth Kinetics for Vapor Deposition Processes - M. Neurock, H. Wen, Q. Ge, and H. Wadley (University of Virginia) PDF
9:00859 Three-dimensional Monte Carlo Simulation of Beta-SiC Deposition from the Vapor Phase - G. Chaix and A. Dollet (CNRS) PDF
9:20860 Interaction of NO Molecules with Si/Ultrathin SiO2 Interface - J.L. Cantin, J. von Bardeleben, L. Gosset, J.J. Ganem, and I. Trimaille (Universites Paris 6 et 7) PDF
9:40861 Initial growth of Cu on SiO_2 and 3-mercaptopropyltrimethoxysilane-coated SiO2 - M. Hu, S. Noda, Y. Ogawa, Y. Tsuji, T. Okubo, Y. Yamaguchi, and H. Komiyama (University of Tokyo) PDF
10:00 Twenty-Minute Intermission
10:20862 Photoemission Oscillations Observed in Chemical Beam Epitaxy of GaAs Using Triethylgallium and Organoarsines - F. Maury (CNRS/INPT), A.M. Gue (CNRS), and N. Viguier (CNRS/INPT) PDF
11:00863 Silicon-Germanium Alloy Chemical Vapor Deposition Chemistry and Kinetics - J. Ekerdt (University of Texas at Austin) PDF
11:20864 Kinetics and Gas-Surface Dynamics of GaN Homoepitaxial Growth Using NH3-Seeded Supersonic Molecular Beams - H.H. Lamb, A. McGinnis, and R. Davis (North Carolina State University) PDF
11:40865 Mapping of GaAs(001) Surface Reconstructions During Molecular Beam Epitaxy Using RHEED and Diffuse Reflectance Spectroscopy - J.E. Guyer, D.A. Gajewski, and J.G. Pellegrino (National Institute of Standards and Technology) PDF

Precursors for Vapor Phase Deposition

Co-Chairs: D. Goodwin and T. Besmann

TimeAbs#TitleView
2:00866 Oxide Film Growth for Electroceramic Thin Films. New and Improved Transparent Conductors Using MOCVD - T. Marks (Northwestern University) PDF
2:40867 Automatic Control of Stoichiometry in Vapor Deposition of Metal Silicates by Alternating Surface Reactions - R. Gordon (Harvard University) PDF
3:00868 Anhydrous Metal Nitrates as CVD and ALD Precursors to Metal Oxide Insulators on Silicon - J. Roberts, W. Gladfelter, S. Campbell, R. Smith, D. Burlesen, and N. Hoilien (University of Minnesota) PDF
3:20869 Chemical Deposition Routes to HfO2: Real-Time Monitoring and Film Growth - K. Forsgren, A. Hårsta (Uppsala University), K. Kukli, J. Aarik, and A. Aidla (University of Tartu) PDF
3:40 Twenty-Minute Intermission

Plasma Chemistry and Plasma Processing

Co-Chairs: M. Zachariah and S. Girshick

TimeAbs#TitleView
4:00870 Probing the Adsorption of Fluorine on Aluminum (111) Surfaces by Low-Energy Ion Scattering and Density-Functional Calculations - M. Allendorf and R. Bastasz (Sandia National Laboratories) PDF
4:20871 Evolution of Surface Morphology During CH4/H2 Plasma Etching of GaAs (001) - S.W. Robey (National Institute of Standards and Technology) PDF
4:40872 Gas Phase Analysis of TiN and TiC Plasma Enhanced CVD Processes by Molecular Beam Mass Spectrometry - C. Amato-Wierda and C. Reddy (University of New Hampshire) PDF
5:00873 Energy and Angular Distribution of Ions Effusing from a Hole in Contact with a High Density Plasma - D. Economou, D. Kim, and C.-K. Kim (University of Houston) PDF
5:20874 Capacitive-Inductive Transition and Related Optical Plasma Structure Driven by a Single Turn Radiofrequency Current Coil - Y. Miyoshi, N. Itazu, and T. Makabe (Keio University) PDF

Congressional Halls A-D, Ballroom Level

Poster Session (7:00 PM - 9:00 PM)

Co-Chairs: L. Kadinski and S. Seal

TimeAbs#TitleView
o875 Nanosized GaN Particles by Chemical Vapor Infiltration - H. Parala, A. Devi, and R. Fischer (Ruhr University Bochum) PDF
o876 Modeling of Aluminum Nanoparticle Formation - R. Schefflan, S. Kovenklioglu, and D. Kalyon (Stevens Institute of Technology) PDF
o877 A Photothermal Aerosol Synthesis Reactor for Production of Semiconductor Nanoparticles and Investigation of Nanoparticle Nucleation and Growth - S. Talukdar, X. Li, and M. Swihart (University at Buffalo - SUNY) PDF
o878 In Situ - Gas Phase Analysis During Si Thin Film Deposition: Molecular Beam Sampling, Laser Ionisation and Mass Spectrometry - H. Stafast, F. Falk, and E. Witkowicz (Institut fuer Physikalische Hochtechnologie) PDF
o879 Kinetics of Gas-Phase Reactions in the N-H System - S. de persis, F. Teyssandier (Universite de Perpignan), and A. dollet (CNRS) PDF
o880 A Study of the Gas-Phase Reactions of Ti(EtMe)4 - D.-H. Kim and S.-J. Kim (Chonnam National University) PDF
o881 CVD of Group 13-15 Binary Materials: Importance of the Association Reactions in the Gas Phase - A. Timoshkin (St. Petersburg State University) PDF
o882 On the Role of HCl in CVD Reaction Mechanisms Involving Chloridic Precursors - D. Neuschutz, J. Muller, and E. Zimmermann (Rheinisch-Westfalische Technische Hochschule Aachen) PDF
o883 Kinetic Monte Carlo Simulation of Homogeneous Nucleation of Hydrogenated Silicon Nanoparticles During Silane Thermal Decomposition - X. Li and M. Swihart (University at Buffalo - SUNY) PDF
o884 Computer Simulation of WSix CVD VLSI Processing - Effect of Abnormal Inlet Gas Flow - - K. Sugawara, T. Muranushi, T. Takai (Nihon University), Y.K. Chae, Y. Shimogaki, and H. Komiyama (University of Tokyo) PDF
o885 Three-Dimensional Numerical MOdeling of CVD of Boron Nitride - J. Lennartz (Advanced Ceramics Corporation), S.F. Owens, and S. Kim (CFD Research Corporation) PDF
o886 Modeling of SiGe Epitaxial Growth in a Wide Range of Growth Conditions - A. Segal, A. Sid'ko, S. Karpov (Soft-Impact Ltd), and Y. Makarov (University of Erlangen-Nurnberg) PDF
o887 An Integrated Simulation Scheme to Optimize Dense Memory Layouts - A. Balasinski (Cypress Semiconductor), L. Karklin (Numerical Technologies), and V. Axelrad (Sequoia Design Systems) PDF
o888 Hysteretical Surface Chemical Kinetics as a Possible Explanation for Sharp SL/RL Pyrocarbon Transition in CVD/CVI - G.L. Vignoles (Domaine Universitaire), C.-M. Brauner, and O. Baconneau (Universite Bordeaux 1) PDF
o889 Modeling Analysis of Gas-Phase Generated Silicon Clusters in a Rotating Disk CVD Reactor - A. Vorob'ev, S. Karpov (Soft-Impact Ltd), Y. Makarov (University of Erlangen-Nürnberg), and R. Davis (Chemical Science and Technology Laboratory, National Institute of Standards and Technology) PDF
o890 Effects of Pad Surface Fuzz Status on ILD Within-Wafer Planarity - L. Chi-Hung, L. Chih-Hung, H. Chi-Yeh, and C. Liang-Keui (Winbond Electronics Corp.) PDF
o891 CVD of Ti-W-C-N Films with Ti[(CH3)2N]4 and W(CO)6 - H.X. ji and C.C. Amato-Wierda (University of New Hampshire) PDF
o892 Codeposition of the DEB-Palladium Hydrogen Getter System - D. Carroll, D. Pesiri, K. Salazar, M. Trkula, J. Rau, and C. Sandoval (Los Alamos National Laboratory) PDF
o893 Failure Analysis of E-Test Failure and Yield Enhancement in Wafer Fabrication - Y.N. Hua (Chartered Semiconductor Mfg Ltd) PDF
o894 Slurry Management Systems: Environmental, Safety and Health Considerations - J. Bare (BOC Edwards) PDF
o895 Control of Dielectric Cap Induced Bandgap Shift in InGaAsP Lasers - J. Wojcik, P. Mascher, C. Simionescu, B. Robinson, and D.A. Thompson (McMaster University) PDF
o896 Effects of Gas Phase Composition on Ion Beam Induced Surface Deposition - H. Wanzenboeck, E. Bertagnolli, and H. Störi (Vienna University of Technology) PDF
o897 Application of FTIR Analysis in Identification of Contamination in Wafer Fabrication - Y.N. Hua (Chartered Semiconductor Mfg Ltd) PDF
o898 Studies & Elimination of Metal Filament in Wafer Fabrication - L.H. An, E.C. Low, Y.N. Hua, and K.K. Lai (Chartered Semiconductor Mfg Ltd) PDF
o899 Investigation and Elimination of Particle Contamination in Wafer Fabrication - Y.N. Hua, L.H. An, R. Yogespri, and R. Shailesh (Chartered Semiconductor Mfg Ltd) PDF
o900 Dynamic Feedback Recipe in CMP Productionline - C.-H. Li, H. Chi-Yeh, L. Chi-Hung, T.K.J. Liu, and L.-K. Chou (Winbond Electronics Corp.) PDF
o901 Deposition of Indium Oxide Films in Plasma CVD - O. Matsumoto, N. Haraoka, Y. Midorikawa, and K.-I. Itoh (Aoyama Gakuin University) PDF
o902 ZnO Film Deposition by Plasma Enhanced CVD Using Zinc-acetylacetonate - T. Aoki, H. Nonaka, and Y. Hatanaka (Shizuoka University) PDF
o903 Indium Nitride Whisker Growth by Chemical Vapor Deposition - A. Devi, H. Parala, and R. Fischer (Ruhr University Bochum) PDF
o904 Rate Theory of Multicomponent Adsorption of Organic Species from Gas Phase on Silicon Wafer Surface - H. Habuka (Yokohama National University), M. Shimada, and K. Okuyama (Hiroshima University) PDF
o905 TPD Study on the Decomposition Mechanism of Ti(i-OPr)4 on Si(100) - S.-I. Cho, C.-H. Chung (Seoul National University), and S.H. Moon (Sungkynkwan University) PDF
o906 Mono-Molecular Adsorbed Layers of Water on an Oxide and their Point Defects under Equilibrium as a Model for Gas Adsorption - S. Raz (Technion Israel Institute of Technology), K. Sasaki, J. Maier (Max Planck Institute for Solid State Research), and I. Riess (Technion Israel Institute of Technology) PDF
o907 In Situ Fault Detection and Thickness Metrology using Quadrupole Mass Spectrometry - E. Rying, M. Ozturk, G. Bilbro (North Carolina State University), and J.C. Lu (Georgia Institute of Technology) PDF
o908 Characterization of Thin Dielectric Layers Using the Non-Contact Surface Charge Profiler (SCP) Method - P. Roman, D.-O. Lee (Penn State University), P. Mumbauer, R. Grant (PRIMAXX, Inc.), J. Tower, E. Kamieniecki (QC Solutions, Inc.), L. Lukasiak (Warsaw University of Technology), and J. Ruzyllo (Penn State University) PDF
o909 Experimental and Numerical Study of the CVD of TiO2 using New Titanium Precursors - T. Leistner, L. Frey (Universitat Erlangen-Nurnberg), C. Schmit (FhG IIS-B), K. Lehmbacher, P. Harter, W. Herrmann (TU Munchen), E. Mesic, P. Kaufmann, L. Kadinski, and F. Durst (Universitat Erlangen-Nurnberg) PDF

Wednesday, March 28, 2001

West Salon A, Ballroom Level

Modeling I

Co-Chairs: M. Meyyappan and D. Economou

TimeAbs#TitleView
10:00 Presentation of the Outstanding Achievement Award of the High Temperature Materials Division
10:05910 HIGH TEMPERATURE MATERIALS DIVISION OUTSTANDING ACHEIVEMENT AWARD ADDRESS-Numerical Simulation of Vapor Phase Deposition Based on Thermodynamics, Kinetics and Mass Transport - C. Bernard (CNRS-INPG-UJF) PDF
10:45911 Process Analysis and Modeling of Thin Silicon Film Deposition by Hot-Wire Chemical Vapor Deposition - R. Aparicio, R. Birkmire, A. Pant, M. Huff, and T.F. Russell (University of Delaware) PDF
11:05912 Comparison Between Computational Modelling and Experiment for a CVD Growth Process of Silicon Films - B. Atakan, M. Hofstatter, and K. Kohse-Hoinghaus (Universitat Bielefeld) PDF
11:25913 Modeling of a Silane LPCVD Process used for Microelectronics and MEMS Fabrication - R.P. Pawlowski, A.G. Salinger, S.D. Habermehl, and P. Ho (Sandia National Laboratories) PDF
11:45914 Theoretical Optimization of Al-CVD Using Elementary Reaction Simulation - M. Sugiyama, T. Iino, T. Nakajima, T. Tanaka (Univ. of Tokyo), H. Itoh, J.-I. Aoyama (STARC), Y. Egashira (Osaka University), K. Yamashita, H. Komiyama, and Y. Shimogaki (Univ. of Tokyo) PDF

Modeling II

Co-Chairs: C. Bernard and C. Wolin

TimeAbs#TitleView
2:00915 Detailed Modeling of Metal Organic Vapor Phase Epitaxy of III-V Ternary Compounds in Production-Scale AIX 2400G3 Planetary Reactor - E.V. Yakovlev, Y.A. Shpolyanskiy, R.A. Talalaev, S.Y. Karpov (Soft-Impact Ltd), Y.N. Makarov (University of Erlangen-Nuernberg), S.A. Lowry (CFD Research Corporation), and T. Bergunde (Ferdinand-Braun-Institut für Höchstfrequenztechnik) PDF
2:20916 Numerical Simulation of the CVD of SIC Using Different Kinetic Models - V. Wunder (Universitat Erlangen-Nurnberg) and L. Kadinski (Universitat Erlangen-Nurnbe) PDF
2:40917 Two-Dimensional Simulation of Pulsed Power Electronegative Plasmas - D. Economou and B. Ramamurthi (University of Houston) PDF
3:00918 Mesoscale Modeling for LPCVD in the Transition Regime - M.K. Gobbert (University of Maryland, Baltimore County) and T.S. Cale (Rensselaer Polytechnic Institute) PDF
3:20 Twenty-Minute Intermission
3:40919 Reduction Strategies for Kinetic Monte Carlo Models of Thin Film Growth - M. Gallivan, R. Murray, and D. Goodwin (California Institute of Technology) PDF
4:00920 Empirical Parameter-Free Recipe for Implantation and Annealing Modeling of N+ Source and Drain in the 180nm and 100nm technology Node - H.-J. Li, X. Chen (University of Texas at Austin), P. Zeitzoff, K. Torres (International SEMATECH), and S. Banerjee (University of Texas at Austin) PDF
4:20921 Effects of Pulsating Flow on Cleaning of and Deposition intoTrenches - I. Suni, H. Lin, and A. Busnaina (Clarkson University) PDF

Film Adhesion and Morphology

Co-Chairs: V. Wunder and M. Masi

TimeAbs#TitleView
4:40922 Improved Chemical Vapor Deposition of Diamond Layers on Cemented Carbides by Formation of Tungsten-Cobalt-Boron Phases in the Interface Region - R. Cremer, K. Reichert, J. Muller, D. Neuschutz (Rheinisch-Westfalische Technische Hochschule Aachen), T. Leyendecker, O. Lemmer, M. Frank, and J. Gussone (CemeCon GmbH) PDF
5:00923 Effect of Deposition Temperature on the Chemical and Mechanical Behavior of Ti-Al-N Thin Films - S. Seal (University of Central Florida), A. Kale (University of Florida), , and K. Sundaram (University of Central Florida) PDF
5:20924 Characterization Studies of Nanophasic CeO2-ZrO2 Multilayers Obtained by CVD - D. Barreca (Universita di Padova), G.A. Battiston, S. Daolio, M. Fabrizio, R. Gerbasi (CNR), E. Tondello (Universita di Padova), and S. Barison (CNR) PDF

Thursday, March 29, 2001

Particle Formation and Aerosol Synthesis

Co-Chairs: S. Sotirchos and S. Seal

TimeAbs#TitleView
8:20925 Kinetic Modeling of Particle Formation During Low-Pressure Silane Oxidation and CVD - S.-M. Suh, S. Girshick, and M. Zachariah (University of Minnesota) PDF
9:00926 Gas-Phase Nucleation in Low-Pressure Silane Plasmas - U. Bhandarkar, S. Girshick (University of Minnesota), M. Swihart (University at Buffalo - SUNY), and U. Kortshagen (University of Minnesota) PDF
9:20927 CFD Modeling of Aerosol Reactors for Material Synthesis - M. Masi, F. Di Muzio, and S. Carra (Politecnico di Milano) PDF
9:40928 Multi-Element Diffusion Burner Facility for Combustion Synthesis Studies - P. Torek, D. Hall, T. Miller, and M. Wooldridge (University of Michigan) PDF
10:00 Twenty-Minute Intermission

Novel Materials and Methods

Co-Chairs: M. Swihart and R. Pawlowski

TimeAbs#TitleView
10:20929 Atmospheric Pressure CVD of YSZ Using Stagnation Flow - T.M. Besmann (Oak Ridge National Laboratory), T.L. Starr (University of Louisville), V. Varanasi, and T.J. Anderson (University of Florida) PDF
10:40930 Initial Stage of Oriented SnO2 Thin Film Formation via Spray Pyrolysis of Organotin(IV) Compound - S. Kaneko, I. Yagi, T. Kosugi, K. Nakajima, M. Okuya, and K. Murakami (Shizuoka University) PDF
11:00931 A Study on Surface Morphology of Si Thin Film Grown by Temperature Modulated Molecular Layer Epitaxy method - J.-I. Nishizawa, A. Murai, T. Oizumi, T. Kurabayashi (Semiconductor Research Institute of Semiconductor Research Foundation), K. Kanamoto (SENDAI Research Center), and T. Yoshida (Semiconductor Research Institute of Semiconductor Research Foundation) PDF
11:20932 Laser-Assisted Gas-Phase Reactivity of Trimethylaluminum with NH3 in Constrained Gas Pulse Nozzle Expansions - A. Demchuk, S. Simpson, and B. Koplitz (Tulane University) PDF
11:40933 LCVD of Copper Thin Films on Silicon - M. Jacquorie and E.W. Kreutz (Rheinisch-Westfalische Technische Hochschule Aachen) PDF