2001 Joint International Meeting - the 200th Meeting of The Electrochemical Society, Inc. and the 52nd Annual Meeting of the International Society of Electrochemistry - San Francisco, California

September 2-7, 2001


P1 - Sixth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications

ECS Cosponsor - Electronics

Wednesday, September 5, 2001

Franciscan Room B, Ballroom Level

Exfoliation and Layer Transfer Technologies

Co-Chairs: C.E. Hunt and P. Moran

8:301450 Overview on Some Recent Advances in Wafer Bonding Technologies - H. Moriceau (CEA/LETI), F. Fournel (CEA/DRFMC), O. Rayssac (SOITEC), A. Soubie, B. Bataillou, and B. Aspar (CEA/LETI) PDF
9:001451 Layer Transfer using Implant and Exfoliation Techniques - K.D. Hobart and F.J. Kub (Naval Research Lab) PDF
9:301452 Silicon Wafer Direct Bonding for Smart-Cut SOI with Buried Tungsten Silicide Layer - S.L. Suder (The Queen's University Belfast) PDF
9:501453 Mechanisms for the Dual Implantation/Cleaving Process in Silicon Carbide - J.A. Bennett, L.C. Feldman (Vanderbilt University), O.W. Holland, D.K. Thomas (Oak Ridge National Laboratory), M. Nastasi, and A. Mishra (Los Alamos National Laboratory) PDF

Fundamental Wafer Bonding Mechanisms

Co-Chairs: T. Abe and S. Senz

10:20 Thirty-Minute Intermission
10:501454 Low Temperature Plasma Assisted Inp-To-Silicon Wafer Bonding: An Alternative to Heteroepitaxial Growth - D. Pasquariello and K. Hjort (Uppsala University) PDF
11:201455 Effects of Plasma Activation on Hydrophilic Bonding of Si and SiO2 - T. Suni, K. Henttinen, I. Suni (VTT Electronics), and J. Makinen (Okmetic Ltd.) PDF
11:401456 Wafer Bonding using Oxygen Plasma Treatment in RIE and ICP RIE - A. Weinert, P. Amirfeiz, and S. Bengtsson (Chamlers Univ of Technology) PDF
12:001457 Investigation of the Bonding Strength and Electrical Characteristics of Si/Si, Si/InP and Si/GaAs Interfaces Bonded by Surface Activated Bonding at Room Temperature and the Influence of Sputtering Time and Energy - M. Howlader, T. Watanabe, and T. Suga (University of Tokyo) PDF

Low Temperature UVH Bonding

Co-Chairs: S. Bengtsson and K. Hobart

2:001458 UHV-Bonding: Electrical Characterization of Interfaces and Application to Magnetoelectronics - S. Senz, A. Reznicek, A. Kumar, R. Scholz, and U. Goesele (Max-Planck-Institute of Microstructure Physics) PDF
2:301459 Why Does a Plasma Treatment Prior to the Wafer Direct Bonding Increase the Bonding Energy of Silicon Wafer Pairs in the Low-Temperature Range ? - M. Wiegand, M. Reiche, and U. Goesele (Max-Planck-Institut fuer Mikrostrukturphysik) PDF
2:501460 Fast Silicon to Silicon Wafer Bonding with an Intermediate Glass Film - M.M. Visser (University of Oslo), D.T. Wang (SINTEF Electronics and Cybernetics), and A.B. Hanneborg (University of Oslo) PDF
3:101461 A Comparison of Interfacial Fracture Energy of Bonded Wafers Using a Micromechanics Indentation Approach and Crack Propagation Technique - C.A. Colinge (California State University), M.C. Shaw (Rockwell Science Center), and K.D. Hobart (Naval Research Laboratory) PDF
3:30 Thirty-Minute Intermission

Bonded Heterostructures

Co-Chairs: K. Hjort and S. Fujino

4:001462 A Review of Strain Relaxation Observed in Wafer-Bonded Heterostructures - P.D. Moran (Michigan Tecdhnogical University), K.D. Hobart (Naval Research Laboratories), E. Rehder, D.M. Hansen, and T.F. Kuech (University of Wisconsin-Madison) PDF
4:301463 Bonded Polycrystalline SiC Substrates for the Growth and Fabrication of GaN FETs - K. Hobart, F. Kub, M. Fatemi, S. Binari, S. Katzer, H. Dietrich (Naval Research Laboratory), G. Kipshidze, S. Nikishin, and H. Temkin (Texas Tech University) PDF
4:501464 Hybrid Substrate from Wafer Direct Bonding - A. Ploessl (OSRAM Opto Semiconductors GmbH & Co. OHG), T. Akatsu (Max-Planck-Institut fuer Mikrostrukturphysik), K. Streubel (OSRAM Opto Semiconductors GmbH & Co. OHG), G. Kaestner (Max-Planck-Institut fuer Mikrostrukturphysik), P. Stauss (OSRAM Opto Semiconductors GmbH & Co. OHG), and U. Goesele (Max-Planck-Institut fuer Mikrostrukturphysik) PDF

Thursday, September 6, 2001

Characterization & Devices

Co-Chairs: I. Yang and C.E. Hunt

8:301465 An Investigation into Interfacial Oxide in Direct Silicon Bonding - P. McCann, S. Byrne, and A. Nevin (Analog Devices Belfast) PDF
8:501466 Electrical and Structural Investigation of Bonded Silicon Interfaces - A. Reznicek, S. Senz, O. Breitenstein, R. Scholz, and U. Goesele (Max-Planck-Institute of Microstructure Physics) PDF
9:101467 Improved Low Temperature Hydrophobic Si-Si Bonding Techniques - R. Esser, K. Hobart, and F. Kub (Naval Research Laboratory) PDF
9:301468 Silicon-Direct Wafer Bonding for Fabrication of RF Microwave Devices - I.K. Bansal (M/A -Com) PDF
9:50 Thirty-Minute Intermission

Novel Bonding Applications

Co-Chairs: H. Jacobson and M. Yoshimi

10:201469 Wafer Bonding Using Low-k Dielectrics as Bonding Glue in Three-Dimensional Integration - Y. Kwon, J.-Q. Lu, R. Gutmann, R. Kraft, J. McDonald, and T. Cale (Rensselaer Polytechnic Institute) PDF
10:401470 One Micron Wafer to Wafer Alignment for 3D Interconnecting Device Integration - C. Brubaker (EV Group Inc.), T. Glinsner, P. Lindner, and C. Schaefer (EV Group) PDF
11:001471 Fabrication Process and Plasticity of Gold-Gold Thermocompression Bonds - C.H. Tsau, M.A. Schmidt, and S.M. Spearing (Massachusetts Institute of Technology) PDF

SOI Applications

Co-Chairs: H. Moriceau and J. Bennett

2:001472 Current Status and Future Direction of SOI Technology - M. Yoshimi (Toshiba Corporation) PDF
2:301473 High Performance CMOS on SOI - I. Yang, S. Fung, J. Sleight, S. Narashima, N. Zamdmer, P. Smeys, J. Welser, P. Agnello, and E. Leobandung (IBM Semiconductor Reseach and Development Center) PDF
3:001474 Scalable Potential and Volume Production in ELTRAN (R); SOI-Epi Wafers TM - K. Sakaguchi and T. Yonehara (Canon Inc.) PDF
3:301475 A Si/SiO2/Si Heterostructure Barrier Varactor Diode Made by Wafer Bonding - S. Bengtsson (Chalmers University of Technology) PDF

Friday, September 7, 2001

High Voltage and High Power Applications

Co-Chairs: K. Sakaguchi and S. Bengtsson

8:301476 Device Applications Using Bonded Thick SOI Wafers - S. Fujino, S. Takahashi, T. Fukada, H. Himi, and K. Kawamoto (DENSO Coporation) PDF
9:001477 Factors Affecting Stress-Induced Defect Generation in Trenched SOI for High-Voltage Applications - A. Nevin, K. Somasundram, P. McCann, X. Cao, and S. Byrne (Analog Devices Belfast) PDF
9:201478 Bi-Directional Double-Side Double-Gate IGBT Fabricated by Wafer Bonding - F. Kub, K. Hobart, M. Ancona (Naval Research Laboratory), J. Neilson (JMSN), K. Brandmier (Silicon Power Corporation), and P. Waind (Dynex) PDF
9:40 Thirty-Minute Intermission

Applications to MEMS

Co-Chairs: H. Baumgart and T. Abe

10:101479 Anodic Bonding for MEMS - H. Jakobsen, A. Lapadatu, and G. Kittilsland (SensoNor asa) PDF
10:401480 Wafer Bonding for Optical Microsystems - E. Hiller, D. Stolze (CIS Institut fur Mikrosensorik gGmbH), M. Wiegand, V. Dragoi, and M. Reiche (Max-Planck-Institut fur Mikrostrukturphysik) PDF
11:001481 Effects of Anodic Bonding on Reliability of Sensors and MOS Circuitry - K. Schjolberg-Henriksen (University of Oslo), G.U. Jensen, and A.B. Hanneborg (SINTEF Electronics and Cybernetics) PDF
11:201482 High Pressure Sensor Based on Fusion Bonding - K. Birkelund, S. Chiryaev, P. Gravesen, and P. Brandt (Danfoss A/S) PDF
11:401483 Surface Treatment Optimisation for Quartz Direct Bonding - O. Vallin, B. Einefors, and C. Hedlund (Uppsala University) PDF

Copyright 1995 The Electrochemical Society, Inc.