Co-Chairs: C.E. Hunt and P. Moran
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:30 | 1450 | Overview on Some Recent Advances in Wafer Bonding Technologies - H. Moriceau (CEA/LETI), F. Fournel (CEA/DRFMC), O. Rayssac (SOITEC), A. Soubie, B. Bataillou, and B. Aspar (CEA/LETI) | |
| 9:00 | 1451 | Layer Transfer using Implant and Exfoliation Techniques - K.D. Hobart and F.J. Kub (Naval Research Lab) | |
| 9:30 | 1452 | Silicon Wafer Direct Bonding for Smart-Cut SOI with Buried Tungsten Silicide Layer - S.L. Suder (The Queen's University Belfast) | |
| 9:50 | 1453 | Mechanisms for the Dual Implantation/Cleaving Process in Silicon Carbide - J.A. Bennett, L.C. Feldman (Vanderbilt University), O.W. Holland, D.K. Thomas (Oak Ridge National Laboratory), M. Nastasi, and A. Mishra (Los Alamos National Laboratory) |
Co-Chairs: T. Abe and S. Senz
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:20 | Thirty-Minute Intermission | ||
| 10:50 | 1454 | Low Temperature Plasma Assisted Inp-To-Silicon Wafer Bonding: An Alternative to Heteroepitaxial Growth - D. Pasquariello and K. Hjort (Uppsala University) | |
| 11:20 | 1455 | Effects of Plasma Activation on Hydrophilic Bonding of Si and SiO2 - T. Suni, K. Henttinen, I. Suni (VTT Electronics), and J. Makinen (Okmetic Ltd.) | |
| 11:40 | 1456 | Wafer Bonding using Oxygen Plasma Treatment in RIE and ICP RIE - A. Weinert, P. Amirfeiz, and S. Bengtsson (Chamlers Univ of Technology) | |
| 12:00 | 1457 | Investigation of the Bonding Strength and Electrical Characteristics of Si/Si, Si/InP and Si/GaAs Interfaces Bonded by Surface Activated Bonding at Room Temperature and the Influence of Sputtering Time and Energy - M. Howlader, T. Watanabe, and T. Suga (University of Tokyo) |
Co-Chairs: S. Bengtsson and K. Hobart
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 1458 | UHV-Bonding: Electrical Characterization of Interfaces and Application to Magnetoelectronics - S. Senz, A. Reznicek, A. Kumar, R. Scholz, and U. Goesele (Max-Planck-Institute of Microstructure Physics) | |
| 2:30 | 1459 | Why Does a Plasma Treatment Prior to the Wafer Direct Bonding Increase the Bonding Energy of Silicon Wafer Pairs in the Low-Temperature Range ? - M. Wiegand, M. Reiche, and U. Goesele (Max-Planck-Institut fuer Mikrostrukturphysik) | |
| 2:50 | 1460 | Fast Silicon to Silicon Wafer Bonding with an Intermediate Glass Film - M.M. Visser (University of Oslo), D.T. Wang (SINTEF Electronics and Cybernetics), and A.B. Hanneborg (University of Oslo) | |
| 3:10 | 1461 | A Comparison of Interfacial Fracture Energy of Bonded Wafers Using a Micromechanics Indentation Approach and Crack Propagation Technique - C.A. Colinge (California State University), M.C. Shaw (Rockwell Science Center), and K.D. Hobart (Naval Research Laboratory) | |
| 3:30 | Thirty-Minute Intermission |
Co-Chairs: K. Hjort and S. Fujino
| Time | Abs# | Title | View |
|---|---|---|---|
| 4:00 | 1462 | A Review of Strain Relaxation Observed in Wafer-Bonded Heterostructures - P.D. Moran (Michigan Tecdhnogical University), K.D. Hobart (Naval Research Laboratories), E. Rehder, D.M. Hansen, and T.F. Kuech (University of Wisconsin-Madison) | |
| 4:30 | 1463 | Bonded Polycrystalline SiC Substrates for the Growth and Fabrication of GaN FETs - K. Hobart, F. Kub, M. Fatemi, S. Binari, S. Katzer, H. Dietrich (Naval Research Laboratory), G. Kipshidze, S. Nikishin, and H. Temkin (Texas Tech University) | |
| 4:50 | 1464 | Hybrid Substrate from Wafer Direct Bonding - A. Ploessl (OSRAM Opto Semiconductors GmbH & Co. OHG), T. Akatsu (Max-Planck-Institut fuer Mikrostrukturphysik), K. Streubel (OSRAM Opto Semiconductors GmbH & Co. OHG), G. Kaestner (Max-Planck-Institut fuer Mikrostrukturphysik), P. Stauss (OSRAM Opto Semiconductors GmbH & Co. OHG), and U. Goesele (Max-Planck-Institut fuer Mikrostrukturphysik) |
Co-Chairs: I. Yang and C.E. Hunt
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:30 | 1465 | An Investigation into Interfacial Oxide in Direct Silicon Bonding - P. McCann, S. Byrne, and A. Nevin (Analog Devices Belfast) | |
| 8:50 | 1466 | Electrical and Structural Investigation of Bonded Silicon Interfaces - A. Reznicek, S. Senz, O. Breitenstein, R. Scholz, and U. Goesele (Max-Planck-Institute of Microstructure Physics) | |
| 9:10 | 1467 | Improved Low Temperature Hydrophobic Si-Si Bonding Techniques - R. Esser, K. Hobart, and F. Kub (Naval Research Laboratory) | |
| 9:30 | 1468 | Silicon-Direct Wafer Bonding for Fabrication of RF Microwave Devices - I.K. Bansal (M/A -Com) | |
| 9:50 | Thirty-Minute Intermission |
Co-Chairs: H. Jacobson and M. Yoshimi
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:20 | 1469 | Wafer Bonding Using Low-k Dielectrics as Bonding Glue in Three-Dimensional Integration - Y. Kwon, J.-Q. Lu, R. Gutmann, R. Kraft, J. McDonald, and T. Cale (Rensselaer Polytechnic Institute) | |
| 10:40 | 1470 | One Micron Wafer to Wafer Alignment for 3D Interconnecting Device Integration - C. Brubaker (EV Group Inc.), T. Glinsner, P. Lindner, and C. Schaefer (EV Group) | |
| 11:00 | 1471 | Fabrication Process and Plasticity of Gold-Gold Thermocompression Bonds - C.H. Tsau, M.A. Schmidt, and S.M. Spearing (Massachusetts Institute of Technology) |
Co-Chairs: H. Moriceau and J. Bennett
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 1472 | Current Status and Future Direction of SOI Technology - M. Yoshimi (Toshiba Corporation) | |
| 2:30 | 1473 | High Performance CMOS on SOI - I. Yang, S. Fung, J. Sleight, S. Narashima, N. Zamdmer, P. Smeys, J. Welser, P. Agnello, and E. Leobandung (IBM Semiconductor Reseach and Development Center) | |
| 3:00 | 1474 | Scalable Potential and Volume Production in ELTRAN (R); SOI-Epi Wafers TM - K. Sakaguchi and T. Yonehara (Canon Inc.) | |
| 3:30 | 1475 | A Si/SiO2/Si Heterostructure Barrier Varactor Diode Made by Wafer Bonding - S. Bengtsson (Chalmers University of Technology) |
Co-Chairs: K. Sakaguchi and S. Bengtsson
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:30 | 1476 | Device Applications Using Bonded Thick SOI Wafers - S. Fujino, S. Takahashi, T. Fukada, H. Himi, and K. Kawamoto (DENSO Coporation) | |
| 9:00 | 1477 | Factors Affecting Stress-Induced Defect Generation in Trenched SOI for High-Voltage Applications - A. Nevin, K. Somasundram, P. McCann, X. Cao, and S. Byrne (Analog Devices Belfast) | |
| 9:20 | 1478 | Bi-Directional Double-Side Double-Gate IGBT Fabricated by Wafer Bonding - F. Kub, K. Hobart, M. Ancona (Naval Research Laboratory), J. Neilson (JMSN), K. Brandmier (Silicon Power Corporation), and P. Waind (Dynex) | |
| 9:40 | Thirty-Minute Intermission |
Co-Chairs: H. Baumgart and T. Abe
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:10 | 1479 | Anodic Bonding for MEMS - H. Jakobsen, A. Lapadatu, and G. Kittilsland (SensoNor asa) | |
| 10:40 | 1480 | Wafer Bonding for Optical Microsystems - E. Hiller, D. Stolze (CIS Institut fur Mikrosensorik gGmbH), M. Wiegand, V. Dragoi, and M. Reiche (Max-Planck-Institut fur Mikrostrukturphysik) | |
| 11:00 | 1481 | Effects of Anodic Bonding on Reliability of Sensors and MOS Circuitry - K. Schjolberg-Henriksen (University of Oslo), G.U. Jensen, and A.B. Hanneborg (SINTEF Electronics and Cybernetics) | |
| 11:20 | 1482 | High Pressure Sensor Based on Fusion Bonding - K. Birkelund, S. Chiryaev, P. Gravesen, and P. Brandt (Danfoss A/S) | |
| 11:40 | 1483 | Surface Treatment Optimisation for Quartz Direct Bonding - O. Vallin, B. Einefors, and C. Hedlund (Uppsala University) |