Plasmas for Thin Film Processing and Surface Modification
by Dennis W. Hess
Monday, October 8, 2012 | Honolulu, HI
Plasmas have been investigated extensively since Irving Langmuir coined the term in 1928 during his observations of ionized gases. Generally, plasmas applied to thin film processing and surface modification are partially ionized gases composed of ions, electrons and a variety of neutral species. This atmosphere is chemically reactive and so allows high reaction rates for film etching, polymerization, deposition and surface modification at room temperature. Due to the extensive array of chemistries that are possible, numerous applications ranging from electronic, photonic, sensor and microfluidic device fabrication, sterilization, artifact restoration, and adhesion promotion have been explored.
This talk will describe the unique plasma properties that can be exploited to control thin film and surface chemistry, physics and nanostructure for specific application areas. In particular, recent studies by the author that involve the etching of metal films such as copper for integrated circuit fabrication and the modification of surfaces such as paper, polymers, and metals to control wetting and adhesion for biomedical applications will be discussed.
Dennis W. Hess is the Thomas C. DeLoach, Jr. Professor of Chemical & Biomolecular Engineering and Director of the NSF Materials Research Science and Engineering Center at the Georgia Institute of Technology. He received a BS in chemistry from Albright College and MS and PhD degrees in physical chemistry from Lehigh University. He was a Member of the Research Staff and Supervisor of Process Development at Fairchild Semiconductor from 1973 to 1977 where he worked for Bruce Deal. In 1977, he joined the Department of Chemical Engineering (ChE) at the University of California, Berkeley as an Assistant Professor. During his time at Berkeley, he served as Assistant Dean of the College of Chemistry (1982-1987) and Vice Chair of the ChE Department (1988-1991). From 1991-1996, Dr. Hess served as Chair of the ChE Department at Lehigh University. He joined the School of Chemical & Biomolecular Engineering at Georgia Tech in 1996.
Dr. Hess served as Divisional Editor for Journal of the Electrochemical Society from 1978-1990 and Associate Editor for Chemistry of Materials from 1988-1996. From 2004-2012, he served as Editor for Electrochemical and Solid State Letters. Currently, he is Editor of ECS Journal of Solid State Science and Technology and ECS Solid State Letters. Dr. Hess served as ECS President from 1996-1997. He received the Thomas D. Callinan Award from the ECS Dielectric Science and Technology Division (1993), the Distinguished Alumnus Award from Albright College (1998), the Charles M. A. Stine Award from the Materials Engineering and Sciences Division of AIChE (1999), and the ECS Solid State Science and Technology Award (2005). Dr. Hess is an ECS Fellow, a Fellow of the American Association for the Advancement of Science, and of the American Institute of Chemical Engineers.