Honolulu PRiME 2012 - Honolulu, Hawaii

October 7 - October 12, 2012



E1 - Solid State Topics General Session


Wednesday, October 10, 2012

310, Level 3, Hawaii Convention Center

Solid State Topics Afternoon Session

Co-Chairs: R. Todi and O. M. Leonte
TimeProgr#Title and Authors
14:00   2438   Characteristics of Zinc Oxide Films Grown on Sapphire Substrates Using High-Energy H2O Generated by a Catalytic Reaction on Platinum Nanoparticles K. Yasui, H. Miura, S. Satomoto, and T. Kato (Nagaoka University of Technology)
14:20   2439   Dielectric Constant Studies of BCN Thin Films K. B. Sundaram and V. Todi (University of Central Florida)
14:40   2440   Effect of Wet Surface Treatments on Amorphous Silicon Anneal and Gate Breakdown C. S. Tiwari, T. Guo, C. Breyfogle, J. Zhang, H. Mitro, L. Olmer, V. Kumar, D. Pohlman, and M. Rutte (Micron Technology Inc.)
15:00   2441   Ultrasonic Spray-Assisted Vapor-Deposition Method as a Cost-Effective and Environmental-Friendly Technology for Semiconductor and Dielectric Materials for Devices S. Fujita, S. Katori, J. Piao, T. Ikenoue, and K. Kaneko (Kyoto University)
15:20   2442   UV-Visible Faraday Rotators Based on Rare-Earth Fluoride Single Crystals: LiREF4 (RE=Tb, Dy, Ho, Er and Yb), PrF3 and CeF3 V. Vasyliev, E. G. Villora (National Institute for Materials Science), Y. Sugahara (Waseda University), and K. Shimamura (National Institute for Materials Science)
15:40 Intermission (20 Minutes)
16:00   2443   The Characterization Study of Polycrystalline Silicon Grain Growth with Electron Backscatter Diffraction Patterns and Crystallinity S. Yang, J. Chang, J. Lim, J. Shin, Y. Yoo, J. Kim, B. Chung, H. Choi, K. Hwang, and H. Kang (Samsung Electronics Co., Ltd.)
16:20   2444   Electrical Breakdown of Anodic Aluminum Oxide Films for Electrowetting Systems M. Mibus, E. Nein, A. Sapkota, C. Knospe, M. Reed, and G. Zangari (University of Virginia)
16:40   2445   Ultrafast Carrier Dynamics in Green-Sensitive Organic Photodiodes S. Sul, K. Lee, D. Leem, K. Kim, and H. Han (Samsung Advanced Institute of Technology)
17:00   2446   Single Chamber HFCVD Process for Growth of Diamond, Graphene and CNTs S. Albin (Norfolk State University), R. Vispute, and A. Seiser (Blue Wave Semiconductors, Inc.)

Kamehameha Exhibit Hall 3, Level 1, Hawaii Convention Center

E1 - Poster Session

TimeProgr#Title and Authors
o   2447   The Systematic Study and Simulation Modeling on Dislocation Edge Stress Effects for Si N-MOSFETs M. Liao, C. Chen, L. Chang, C. Yang (National Taiwan University), C. Hsieh (Industrial Technology Research Institute), and M. Lee (National Taiwan Normal University)
o   2448   The Investigation on the Relaxation of Intrinsic Compressive Stress in CMOS Transistors by Additional N IMP Treatment and AFM-Raman Stress Extraction M. Liao, C. Chen, L. Chang, C. Yang (National Taiwan University), C. Hsieh (Industrial Technology Research Institute), and M. Lee (National Taiwan Normal University)
o   2449   Plasmonic Color Filters for OLED by Laser Interference Lithography J. Park (Korea University), Y. Do (KAIST), B. Hwang (Korea University), K. Choi (KAIST), and B. Ju (Korea University)
o   2450   Hot Carrier effects by Gate Induced Drain Leakage Current K. Kim (Samsung Electronics Co.), C. Han, J. Lee, D. Kim, H. Kim (Sungkyunkwan University), H. Lee (Samsung Electronics Co.), and B. Choi (Sungkyunkwan University)
o   2451   Development of Visual Inspection System for Metal Surface with Multivariate Pattern Analysis K. Shigyo, T. Matsumoto, K. Sakiyama (Mitsubishi Electric Corporation), and H. Kobayashi (Mitsubishi Electric METECS)
o   2452   Effects of Tungsten Composition Ratio on the Properties of W-In-Zn-O Films Deposited by RF Magnetron Sputtering G. Heo (Korea Institute of Industrial Technology), B. Oh (LINKLINE INC), J. Park (Korea Institute of Industrial Technology), Y. Lee, Y. Lee, and D. Shin (Chosun University)
o   2453   Fabrication of n-type Semiconductive Polycrystalline Diamond by Incorporating Phosphorous Atoms A. Nakahara, H. Naragino, K. Yoshinaga, S. Tanaka, and K. Honda (Yamaguchi University)
o   2454   Carrier Transport Mechanism at Metal/Amorphous Gallium Indium Zinc Oxide Interfaces S. Kim, C. Choi, and H. Kim (Chonbuk National University)
o   2455   Glowth of AlN Single Crystals by Sublimation Method Y. Oshima, M. Nakamura (National institute for materials science), Y. Masa (Sumitomo Metal Mining Co., Ltd.), E. G. Villora, K. Shimamura (National Institute for Materials Science), and N. Ichinose (Waseda University)