Honolulu PRiME 2012 - Honolulu, Hawaii

October 7 - October 12, 2012



E5 - Dielectric Materials and Metals for Nanoelectronics and Photonics 10


Monday, October 8, 2012

313A, Level 3, Hawaii Convention Center

Non Volatile Memory

Co-Chairs: Albert Chin, Samares Kar
TimeProgr#Title and Authors
10:00 Introductory Remarks (10 Minutes)
10:10   2574   Ultra-Low Switching Power RRAM Using Hopping Conduction Mechanism A. Chin, Y. Chiu (National Chiao-Tung University), C. Cheng (National Taiwan Normal University), Z. Zheng, and M. Liu (Chinese Academy of Sciences)
10:40   2575   ALD Grown Functional Oxide Layers for Nonvolatile Resistive Switching Memory Applications S. Hoffmann-Eifert and R. Waser (Forschungszentrum Juelich)
11:10   2576   Hafnium Oxide Based CMOS Compatible Ferroelectric Materials U. Schroeder (Namlab gGmbH), J. Mueller (Fraunhofer CNT), E. Yurchuk, S. Mueller, D. Martin, S. Slesazeck, and T. Mikolajick (Namlab gGmbH)
11:40   2577   HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays T. Bertaud, C. Walczyk, D. Walczyk, M. Sowinska, D. Wolansky, B. Tillack, G. Schoof, C. Wenger (IHP), S. Thiess (DESY), and T. Schroeder (IHP)
12:10   2578   Resistive Switching of Iron Oxide Nanoparticles in Patterned Array Structure on Flexible Substrate J. Kim, J. Yoo, Y. Baek, H. Kim, Q. Hu, C. Kang, and T. Yoon (Myongji University)

Novel Dielectrics

Co-Chairs: Joerg Osten, Sven Van Elshocht
TimeProgr#Title and Authors
13:50   2579   Theoretical Perspectives in Defect and Impurity Physics toward Materials Design for Oxides N. Umezawa (National Institute for Materials Science)
14:20   2580   Strain-induced effects on dielectric properties of thin, crystalline rare earth oxides on silicon H. Osten and D. Schwendt (Leibniz University)
14:50   2581   Epitaxial Si and Gd2O3 Heterostructures - Distributed Bragg Reflectors with Stress Management Function for GaN on Si Light Emitting Devices R. Dargis, A. Clark, E. Arkun, R. Roucka, D. Williams, R. S. Smith, and M. Lebby (Translucent Inc.)
15:10   2582   Room Temperature Ferromagnetism Induced by Electric Field in Cobalt-Doped TiO2 T. Fukumura (University of Tokyo)
15:40   2583   Enhancement of Dielectric Properties and Magnetic Coupling of Pb(Fe0.5Nb0.5)O3 by Doping Ni0.65Zn0.35Fe2O4 S. K. Barik, D. Pradhan, S. Sahoo, V. Pauli, and R. Katiyar (University of Puerto Rico)

Tuesday, October 9, 2012

313A, Level 3, Hawaii Convention Center

Ge Channel

Co-Chairs: Koji Kita
TimeProgr#Title and Authors
09:00   2584   Conduction Band-offset in GeO2/Ge Stack Determined by Internal Photoemission Spectroscopy W. Zhang, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi (The University of Tokyo)
09:20   2585   Hydrogen Interaction with HfO2 Films Deposited on Ge(100) and Si(100) G. V. Soares (UFRGS), T. Feijó (IF-UFRGS), I. Baumvol (IF-UFRGS and UCS), C. Aguzzoli (UCS), C. Krug (IF-UFRGS and CEITEC S.A), and C. Radtke (IQ-UFRGS)

InGaAs and GaAs Passivation

Co-Chairs: Susanne Stemmer, Heiji Watanabe
TimeProgr#Title and Authors
10:00 Award Ceremony (10 Minutes)
10:10   2586   MOS Interface Control of High Mobility Channel Materials for Realizing Ultrathin EOT Gate Stacks S. Takagi, R. Zhang, R. Suzuki, N. Taoka, M. Yokoyama, and M. Takenaka (The University of Tokyo)
10:40   2587   III-V/Oxide Interfaces Investigated with Synchrotron Radiation Photoemission Spectroscopy M. Tallarida (Brandenburg University of Technology)
11:10   2588   Unit Cell by Unit Cell Cleaning and Nucleation for ALD Gate Oxide Deposition W. Melitz, T. Kent, E. Chagarov, M. Edmonds (UCSD), T. Kaufman-Osborn (University of California, San Diego), J. Sung Lee (UCSD), K. Kiantaj, and A. Kummel (University of California, San Diego)
11:40   2589   Scaling and Interface Control of High-k/III-V Interfaces S. Stemmer, V. Chobpattana, Y. Hwang (University of California Santa Barbara), and R. Engel-Herbert (The Pennsylvania State University)
12:10   2590   Effect of In0.53Ga0.47As surface Nitridation on Electrical Characteristics of High-k/ Capacitors Y. Suzuki, D. Zadeh, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, and H. Iwai (Tokyo Institute of Technology)

Metal Work Function Tuning

Co-Chairs: Akira Toriumi, Atif Noori
TimeProgr#Title and Authors
14:00   2591   Interface Dipole Cancellation in SiO2/High-k/SiO2/Si Gate Stacks S. Hibino, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi (The University of Tokyo)
14:20   2592   Phenomena of Dielectric Capping Layer Insertion into High- κ Metal Gate Stacks in Gate-First/Gate-Last Integration H. Jagannathan, P. Jamison, and V. Paruchuri (IBM Research)
14:40   2593   Conformal Metal Gate Process Technology for 14nm Logic Node and Below A. M. Noori, A. Brand, Y. Lei, M. Chen, W. Tang, X. Lu, X. Fu, S. Ganguli, J. Anthis, D. Thompson, N. Yoshida, M. Xu, M. Chang, and S. Gandikota (Applied Materials)
15:10   2594   Investigation of Mg Diffusion in Ta(N) based Electrodes on HfO2 for sub-32nm CMOS Gate-Last Transistors R. Gassilloud, C. Maunoury, C. Leroux (CEA France), P. Chevalier (STMicroelectronics), C. Dressler, F. Aussenac, F. Martin (CEA France), D. Bensahel (STMicroelectronics), and S. Maitrejean (CEA France)

FinFET and 3-D Transistors

Co-Chairs: Kaushik Roy, Durga Misra
TimeProgr#Title and Authors
15:40   2595   Device-Circuit Co-design of FinFETs in Scaled Technologies S. Gupta and K. Roy (Purdue University)
16:10   2596   Independent-Double-Gate FinFET SRAM Technology K. Endo, S. O'uchi, Y. Liu, T. Matsukawa, and M. Masahara (AIST)
16:40   2597   Electrical Characterization and Reliability Assessment of Double-gate FinFETs C. D. Young, K. Akarvardar, K. Matthews (SEMATECH), M. Baykan (U. of Florida - Gainesville), J. Pater, I. Ok, T. Ngai, K. Ang, M. Minakais, G. Bersuker, C. Hobbs, P. Kirsch, and R. Jammy (SEMATECH)
17:10   2598   Current Status of High-k and Metal Gates in CMOS G. Wilk, M. Verghese, P. Chen (ASM America), and J. Maes (ASM Belgium)

Kamehameha Exhibit Hall 3, Level 1, Hawaii Convention Center

E5 - Poster Session

Co-Chairs: Durga Misra, Samares Kar
TimeProgr#Title and Authors
o   2599   Roles of Target Composition on the Dielectric Property of RF Sputtered Bi2O3-ZnO-Nb2O5 Pyrochlore Thin Film K. Ko, M. Lim, B. Lee, H. Lee, and J. Choi (Ajou University)
o   2600   Effect of Erbium Silicide Crystallinity for Low Barrier Contact Between Erbium Silicide and n-type Silicon H. Tanaka, A. Teramoto, S. Sugawa, and T. Ohmi (Tohoku University)
o   2601   Measurement and Identification of Three Contributing Charge Terms in Negative bias Temperature Instability C. Mayberry (AFRL), D. Nguyen, C. Kouhestani (AFRL/RVSE), K. Kambour (SAIC), H. Hjalmarson (Sandia National Laboratories), and R. Devine (AFRL/RVSE)
o   2602   Process to Etch Ni and Pt Residues during Silicide Contact Electrode Processing using Low Temperature Aqueous Solutions A. N. Duong (Intermolecular Inc), C. Fitz, S. Metzger (Globalfoundries), O. Karlsson, J. C. Foster, G. Nowling (Intermolecular Inc), V. Sih, and P. Besser (Globalfoundries)
o   2603   Correlation between Electrical and Optical Properties of Tantalum Anodic Oxide and Electron Cyclotron Resonance Etching Studies of E-beam Deposited Ta2O5 Films A. Kulpa and N. Jaeger (The University of British Columbia)
o   2604   Area Dependence of Reliability characteristics for Atomic Layer Deposition HfO2 Film under Static and Dynamic Stress Y. Cheng, Y. Chang, C. Hsieh, and J. Lin (National Chi-Nan University)
o   2605  
Characterization of Sol-Gel-Derived Crystalline HfO2 -Y2O3 Thin Films on Si(001) Substrates H. Shimizu and T. Nishide (Nihon University)
o   2606  
Comparison on Physical and Electrical Properties of Sputtered Ru and RuO2 Gate Electrodes Grown on HfO2/Si for p-MOSFET H. Kim, S. Lee, I. Yu, J. Lee (Seoul National University), T. Park (Hanyang University), and C. Hwang (Seoul National University)
o   2607   MOSFETs on InP Substrate with LaAlO3/HfO2 Bilayer of Different LaAlO3 Thickness and Single LaXAl1-XO Layer with Different La Doping Level Y. Wang, Y. Chen, F. Xue, F. Zhou, Y. Chang, and J. Lee (The University of Texas at Austin)
o   2608   Thiol-Ene Reaction Derived Sol-Gel Hybrid Dielectric Layer for Oragnic Thin Film Transistors J. Kim, Y. Kim, J. Ko (Korea Advanced Institute of Science and Technology), and B. Bae (Korea Advanced Institute of Science ad Technology (KAIST))
o   2609   Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO2/Si(100) Interface T. Suwa, A. Teramoto (Tohoku University), T. Muro, T. Kinoshita (Japan Synchrotron Radiation Research Institute), S. Sugawa, T. Hattori, and T. Ohmi (Tohoku University)

Wednesday, October 10, 2012

313A, Level 3, Hawaii Convention Center

Strain Characterization

Co-Chairs: Samares Kar
TimeProgr#Title and Authors
09:00   2610   Development of Ultrathin Gold Film Tensile Testing by Floating Specimen on Water Surface J. Kim, A. Nizami (KAIST), H. Lee, S. Hyun (Korea Institute of Machinery and Materials), and T. Kim (KAIST)
09:20   2611   Characterization of Stress Transfer from Process Induced Stressor Layer to Substrate in MOSFETs R. THOMAS, D. Benoit, A. Pofelski, L. Clement, P. Morin (STMicroelectronics), D. Cooper (CEA LETI), and F. Bertin (CEA-LETI)

Nano-Wire Technology

Co-Chairs: Hemanth Jagannathan, Kajuhiko Endo
TimeProgr#Title and Authors
10:00   2612   Si Nanowire Technology H. Iwai (Tokyo Institute of Technology)
10:30   2613   Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method - Novel Platform for High-Mobility Transistors and Photonic Devices - H. Watanabe, Y. Suzuki, S. Ogiwara, N. Kataoka, T. Hashimoto, T. Hosoi, and T. Shimura (Osaka University)
11:00   2614   A Study of Metal Gates on HfO2 using Si Nanowire Field Effect Transistors as Platform Q. Li (George Mason University), H. Zhu, H. Yuan, O. Kirillov (NIST), D. Ioannou (George Mason University), J. Suehle, and C. A. Richter (NIST)

EOT Scaling

Co-Chairs: Shinichi Takagi, Sven Van Elshocht
TimeProgr#Title and Authors
11:20   2615   Aggressive SiGe Channel Gate Stack Scaling by Remote Oxygen Scavenging: pFET Performance and Reliability M. M. Frank, E. A. Cartier, T. Ando, S. W. Bedell, J. Bruley, Y. Zhu, and V. Narayanan (IBM T.J. Watson Research Center)
11:40   2616   Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT T. Kamale (Tokyo Institute of Technology), R. Tan (Ningbo University), K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, and H. Iwai (Tokyo Institute of Technology)
12:00   2617   Remote Scavenging Technology using Ti/TiN Capping Layer Interposed in a Metal/High-k Gate Stack X. Ma, X. Wang, K. Han, W. Wang, and T. Ye (Chinese Academy of Sciences)

Interface Related Studies

Co-Chairs: Andrew Kummel, Koji Kita
TimeProgr#Title and Authors
14:00   2618   Band Lineup Issues Related with High-k/SiO2/Si Stack J. Xiang, X. Wang (Chinese Academy of Sciences), T. Li (Institute of Microelectronics of Chinese Academy of Sciences), C. Zhao, W. Wang (Chinese Academy of Sciences), Q. Liang, J. Li (Institute of Microelectronics of Chinese Academy of Sciences), D. Chen, and T. Ye (Chinese Academy of Sciences)
14:20   2619   Schottky Barrier Height at TiN/HfO2 Interface of TiN/HfO2/SiO2/Si Structure K. Han, X. Wang, W. Wang (Chinese Academy of Sciences), J. Zhang (North China University of Technology), J. Xiang, H. Yang, C. Zhao, D. Chen, and T. Ye (Chinese Academy of Sciences)
14:40   2620   SiC MOS Interface States: Similarity and Dissimilarity from Silicon T. Umeda, Y. Satoh (University of Tsukuba), R. Kosugi, Y. Sakuma, M. Okamoto, S. Harada (National Institute of Advanced Industrial Science and Technology), and T. Ohshima (Japan Atomic Energy Agency)

Device Manufacturing

Co-Chairs: Samares Kar
TimeProgr#Title and Authors
15:20   2621   Controlled Lateral Etching of Titanium Nitride in a CMOS Gate Structure using DSP+ J. C. Foster (Intermolecular inc), S. Metzger, and P. Besser (Globalfoundries)
15:40   2622  
The Electrochemical Kinetics of Selectively Corroding Poly-Silicon in Generating Lonely Crater-Defects L. Sheng and E. Glines (ON Semiconductor)
16:00   2623   Local-Loading Effects for Pure-Boron-Layer Chemical-Vapor Deposition V. Mohammadi (Delft University of Technology), W. De Boer (TUDelft), T. Scholtes (Delft University of Technology), and L. Nanver (TUDelft)